STMICROELECTRONICS STTA9012TV2

STTA9012TV1/2

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2 x 45A
VRRM
1200V
trr (typ)
65ns
VF (max)
K2
A2
K1
A1
STTA9012TV1
1.85V
A2
K1
K2
A1
STTA9012TV2
FEATURES AND BENEFITS
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE :
Electrical insulation : 2500VRMS
Capacitance : < 45pF.
ISOTOPTM
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all ”freewheel
mode” operations.
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
VRSM
Non repetitive peak reverse voltage
1200
V
IF(RMS)
RMS forward current
150
A
IFRM
Repetitive peak forward current
tp = 5 µs F = 5kHz square
700
A
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
420
A
T stg
Storage temperature range
- 65 to + 150
°C
150
°C
Tj
Maximum operating junction temperature
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November1999 - Ed: 6B
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STTA9012TV1/2
THERMAL AND POWER DATA (per diode)
Symbol
Rth(j-c)
P1
Pmax
Parameter
Test conditions
Value
Unit
Per diode
0.85
°C/W
Total
0.48
Coupling
0.1
Conduction power dissipation
IF(AV) = 45A δ =0.5
Tc= 70°C
94
W
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Tc= 62°C
104
W
Junction to case thermal resistance
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
VF *
IR **
Parameter
Forward voltage drop
Threshold voltage
Rd
Dynamic resistance
Typ
Max
Unit
Tj = 25°C
Tj = 125°C
2.05
1.85
V
1.3
VR =0.8 x
VRRM
Tj = 25°C
Tj = 125°C
3
200
12
µA
mA
Ip < 3.IAV
Tj = 125°C
1.57
V
6
mΩ
Max
Unit
IF =45A
Reverse leakage current
Vto
Test pulses :
Test conditions
Min
* tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
trr
IRM
S factor
Parameter
Reverse recovery
time
Maximum reverse
recovery current
Softness factor
Test conditions
Min
Tj = 25°C
IF = 0.5 A IR = 1A
Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR =30V
Tj = 125°C VR = 600V
dIF/dt = -360 A/µs
dIF/dt = -500 A/µs
Tj = 125°C VR = 600V
dIF/dt = -500 A/µs
Typ
ns
65
115
A
IF =45A
60
50
-
IF =45A
1.2
TURN-ON SWITCHING
Symbol
t fr
VFp
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Parameter
Forward recovery time
Peak forward voltage
Test conditions
Min
Typ
Max
Tj = 25°C
IF =45 A, dIF/dt = 360 A/µs
measured at 1.1 × VFmax
900
Tj = 25°C
IF =45A, dIF/dt = 360 A/µs
IF =45A, dIF/dt = 500 A/µs
30
Unit
ns
V
30
STTA9012TV1/2
Fig. 1: Conduction losses versus average current
(per diode).
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
P1(W)
IFM(A)
100
δ = 0.1
δ = 0.2
500
δ = 0.5
Tj=125°C
80
100
δ=1
60
40
10
T
20
δ=tp/T
IF(av) (A)
0
0
5
10
15
20
25
30
35
40
VFM(V)
tp
45
1
0.0
50
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Fig. 4: Peak reverse recovery current versus dIF/dt
(90% confidence, per diode).
IRM(A)
Zth(j-c)/Rth(j-c)
1.0
80
VR=600V
Tj=125°C
70
0.8
IF=2*IF(av)
60
IF=IF(av)
50
0.6
δ = 0.5
40
0.4
IF=0.5*IF(av)
30
δ = 0.2
0.2
0.5
20
δ = 0.1
Single pulse
0.0
1E-3
10
tp(s)
1E-2
1E-1
1E+0
5E+0
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
0
dIF/dt(A/µs)
0
100
200
300
400
500
Fig. 6: Softness factor (tb/ta) versus dI F/dt (typical
values).
trr(ns)
S factor
1000
1.60
VR=600V
Tj=125°C
800
600
IF<2*IF(av)
VR=600V
1.40
Tj=125°C
1.20
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
400
1.00
0.80
200
dIF/dt(A/µs)
0
0
100
200
300
400
500
0.60
dIF/dt(A/µs)
0
100
200
300
400
500
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STTA9012TV1/2
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj=125°C).
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence,per diode).
VFP(V)
1.1
40
Tj=125°C
IF=IF(av)
35
S factor
1.0
30
25
0.9
20
IRM
15
0.8
10
5
0.7
Tj(°C)
25
50
0
75
100
125
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
tfr(ns)
1000
900
800
700
600
500
400
300
200
100
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Tj=125°C
VFR=1.1*VF max.
IF=IF(av)
dIF/dt(A/µs)
0
100
200
300
400
500
dIF/dt(A/µs)
0
100
200
300
400
500
STTA9012TV1/2
APPLICATION DATA
The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
losses in all high frequency or high pulsed current
operations. In such applications (Fig A to D),the
way of calculating the power losses is given below :
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
Fig. A : ”FREEWHEEL” MODE.
SWITCHING
TRANSISTOR
DIODE:
TURBOSWITCH
IL
VR
t
T
F = 1/T
= t/T
LOAD
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STTA9012TV1/2
Fig. B : SNUBBER DIODE.
Fig. C : DEMAGNETIZING DIODE.
PWM
t
T
F = 1/T
= t/T
Fig. D : RECTIFIER DIODE.
STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES .
Fig. E: STATIC CHARACTERISTICS
Conduction losses :
I
P1 = Vt0 . IF(AV) + Rd . IF2(RMS)
IF
Rd
Reverse losses :
VR
V
IR
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V tO
VF
P2 = VR . IR . (1 - δ)
STTA9012TV1/2
APPLICATION DATA (Cont’d)
Fig. F: TURN-OFF CHARACTERISTICS
Turn-on losses :
(in the transistor, due to the diode)
V
IL
VR × IRM 2 × ( 3 + 2 × S ) × F
6 x dIF ⁄ dt
VR × IRM × IL × ( S + 2 ) × F
+
2 x dIF ⁄ dt
TRANSISTOR
I
P5 =
t
I
dI F /dt
DIODE
Turn-off losses (in the diode) :
ta tb
V
t
P3 =
dI R /dt
I RM
VR × IRM 2 × S × F
6 x dIF ⁄ dt
VR
trr = ta + tb
I
dI F /dt = VR /L
S = tb / ta
RECTIFIER
OPERATION
Turn-off losses :
(with non negligible serial inductance)
ta tb
V
t
IRM
dI R /dt
VR
P3’ =
VR × IRM 2 × S × F
+
6 x dIF ⁄ dt
L × IRM 2 × F
2
P3,P3’ and P5 are suitable for powerMOSFET and
IGBT
trr = ta + tb
S = tb/ta
Fig. G: TURN-ON CHARACTERISTICS
IF
I Fmax
dI F /dt
0
t
VF
Turn-on losses :
P4 = 0.4 (VFP - VF) . IFmax . tfr . F
V Fp
VF
1.1V F
0
tfr
t
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STTA9012TV1/2
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
REF.
Millimeters
Inches
A
Min.
11.80
Max.
12.20
Min.
0.465
Max.
0.480
A1
B
8.90
7.8
9.10
8.20
0.350
0.307
0.358
0.323
C
0.75
0.85
0.030
0.033
C2
D
1.95
37.80
2.05
38.20
0.077
1.488
0.081
1.504
D1
31.50
31.70
1.240
1.248
E
E1
25.15
23.85
25.50
24.15
0.990
0.939
1.004
0.951
E2
G
24.80 typ.
14.90 15.10
0.976 typ.
0.587 0.594
G1
12.60
12.80
0.496
0.504
G2
F
3.50
4.10
4.30
4.30
0.138
0.161
0.169
0.169
F1
4.60
5.00
0.181
0.197
P
P1
4.00
4.00
4.30
4.40
0.157
0.157
0.69
0.173
S
30.10
30.30
1.185
1.193
Cooling method: by condiction (C)
Recommended torque value: 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws
recommended for mounting the package on the heatsink and the 4 screws for terminals).
The screws supplied with the package are suitable for mounting on a board (or other types of terminals)
with a thickness of 0.6 mm min and 2.2 mm max.
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STTA9012TV1 STTA9012TV1
ISOTOP
10
Tube
STTA9012TV2 STTA9012TV2
ISOTOP
27g.
without screws
10
Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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