STTA9012TV1/2 TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY. LOW INDUCTANCE PACKAGE < 5 nH. INSULATED PACKAGE : Electrical insulation : 2500VRMS Capacitance : < 45pF. ISOTOPTM DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mode” operations. They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V VRSM Non repetitive peak reverse voltage 1200 V IF(RMS) RMS forward current 150 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 700 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 420 A T stg Storage temperature range - 65 to + 150 °C 150 °C Tj Maximum operating junction temperature ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics. November1999 - Ed: 6B 1/8 STTA9012TV1/2 THERMAL AND POWER DATA (per diode) Symbol Rth(j-c) P1 Pmax Parameter Test conditions Value Unit Per diode 0.85 °C/W Total 0.48 Coupling 0.1 Conduction power dissipation IF(AV) = 45A δ =0.5 Tc= 70°C 94 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tc= 62°C 104 W Junction to case thermal resistance STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Parameter Forward voltage drop Threshold voltage Rd Dynamic resistance Typ Max Unit Tj = 25°C Tj = 125°C 2.05 1.85 V 1.3 VR =0.8 x VRRM Tj = 25°C Tj = 125°C 3 200 12 µA mA Ip < 3.IAV Tj = 125°C 1.57 V 6 mΩ Max Unit IF =45A Reverse leakage current Vto Test pulses : Test conditions Min * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS (per diode) TURN-OFF SWITCHING Symbol trr IRM S factor Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Min Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125°C VR = 600V dIF/dt = -360 A/µs dIF/dt = -500 A/µs Tj = 125°C VR = 600V dIF/dt = -500 A/µs Typ ns 65 115 A IF =45A 60 50 - IF =45A 1.2 TURN-ON SWITCHING Symbol t fr VFp 2/8 Parameter Forward recovery time Peak forward voltage Test conditions Min Typ Max Tj = 25°C IF =45 A, dIF/dt = 360 A/µs measured at 1.1 × VFmax 900 Tj = 25°C IF =45A, dIF/dt = 360 A/µs IF =45A, dIF/dt = 500 A/µs 30 Unit ns V 30 STTA9012TV1/2 Fig. 1: Conduction losses versus average current (per diode). Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). P1(W) IFM(A) 100 δ = 0.1 δ = 0.2 500 δ = 0.5 Tj=125°C 80 100 δ=1 60 40 10 T 20 δ=tp/T IF(av) (A) 0 0 5 10 15 20 25 30 35 40 VFM(V) tp 45 1 0.0 50 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration (per diode). 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). IRM(A) Zth(j-c)/Rth(j-c) 1.0 80 VR=600V Tj=125°C 70 0.8 IF=2*IF(av) 60 IF=IF(av) 50 0.6 δ = 0.5 40 0.4 IF=0.5*IF(av) 30 δ = 0.2 0.2 0.5 20 δ = 0.1 Single pulse 0.0 1E-3 10 tp(s) 1E-2 1E-1 1E+0 5E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). 0 dIF/dt(A/µs) 0 100 200 300 400 500 Fig. 6: Softness factor (tb/ta) versus dI F/dt (typical values). trr(ns) S factor 1000 1.60 VR=600V Tj=125°C 800 600 IF<2*IF(av) VR=600V 1.40 Tj=125°C 1.20 IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) 400 1.00 0.80 200 dIF/dt(A/µs) 0 0 100 200 300 400 500 0.60 dIF/dt(A/µs) 0 100 200 300 400 500 3/8 STTA9012TV1/2 Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj=125°C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence,per diode). VFP(V) 1.1 40 Tj=125°C IF=IF(av) 35 S factor 1.0 30 25 0.9 20 IRM 15 0.8 10 5 0.7 Tj(°C) 25 50 0 75 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). tfr(ns) 1000 900 800 700 600 500 400 300 200 100 4/8 Tj=125°C VFR=1.1*VF max. IF=IF(av) dIF/dt(A/µs) 0 100 200 300 400 500 dIF/dt(A/µs) 0 100 200 300 400 500 STTA9012TV1/2 APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the tansistor due to the diode Fig. A : ”FREEWHEEL” MODE. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR t T F = 1/T = t/T LOAD 5/8 STTA9012TV1/2 Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE. PWM t T F = 1/T = t/T Fig. D : RECTIFIER DIODE. STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS Conduction losses : I P1 = Vt0 . IF(AV) + Rd . IF2(RMS) IF Rd Reverse losses : VR V IR 6/8 V tO VF P2 = VR . IR . (1 - δ) STTA9012TV1/2 APPLICATION DATA (Cont’d) Fig. F: TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × ( 3 + 2 × S ) × F 6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F + 2 x dIF ⁄ dt TRANSISTOR I P5 = t I dI F /dt DIODE Turn-off losses (in the diode) : ta tb V t P3 = dI R /dt I RM VR × IRM 2 × S × F 6 x dIF ⁄ dt VR trr = ta + tb I dI F /dt = VR /L S = tb / ta RECTIFIER OPERATION Turn-off losses : (with non negligible serial inductance) ta tb V t IRM dI R /dt VR P3’ = VR × IRM 2 × S × F + 6 x dIF ⁄ dt L × IRM 2 × F 2 P3,P3’ and P5 are suitable for powerMOSFET and IGBT trr = ta + tb S = tb/ta Fig. G: TURN-ON CHARACTERISTICS IF I Fmax dI F /dt 0 t VF Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F V Fp VF 1.1V F 0 tfr t 7/8 STTA9012TV1/2 PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. Millimeters Inches A Min. 11.80 Max. 12.20 Min. 0.465 Max. 0.480 A1 B 8.90 7.8 9.10 8.20 0.350 0.307 0.358 0.323 C 0.75 0.85 0.030 0.033 C2 D 1.95 37.80 2.05 38.20 0.077 1.488 0.081 1.504 D1 31.50 31.70 1.240 1.248 E E1 25.15 23.85 25.50 24.15 0.990 0.939 1.004 0.951 E2 G 24.80 typ. 14.90 15.10 0.976 typ. 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 F 3.50 4.10 4.30 4.30 0.138 0.161 0.169 0.169 F1 4.60 5.00 0.181 0.197 P P1 4.00 4.00 4.30 4.40 0.157 0.157 0.69 0.173 S 30.10 30.30 1.185 1.193 Cooling method: by condiction (C) Recommended torque value: 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws for terminals). The screws supplied with the package are suitable for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Ordering type Marking Package Weight Base qty Delivery mode STTA9012TV1 STTA9012TV1 ISOTOP 10 Tube STTA9012TV2 STTA9012TV2 ISOTOP 27g. without screws 10 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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