STV9379 VERTICAL DEFLECTION BOOSTER .. .. .. POWER AMPLIFIER FLYBACK GENERATOR THERMAL PROTECTION OUTPUT CURRENT UP TO 2.0APP FLYBACK VOLTAGE UP TO 90V (on Pin 5) SUITABLE FOR DC COUPLING APPLICATION HEPTAWATT (Plastic Package) DESCRIPTION Designed for monitors and high performance TVs, the STV9379 vertical deflection booster delivers flyback voltages close to 90V. TheSTV9379 operateswith suppliesup to 42Vand provides up to 2APP output current to drive the yoke. The STV9379 is offered in HEPTAWATT package. ORDER CODE : STV9379 PIN CONNECTIONS 7 6 5 4 3 2 1 Non-inverting Input Output Stage Supply Output GND Flyback Generator Supply Voltage Inverting Input 9379-01.EPS Tab connected to pin 4 August 1998 1/5 STV9379 BLOCK DIAGRAM OUTPUT STAGE SUPPLY VOLTAGE SUPPLY 2 FLYBACK GENERATOR 6 3 FLYBACK GENERATOR INVERTING INPUT 1 POWER AMPLIFIER NON-INVERTING INPUT 5 OUTPUT 7 THERMAL PROTECTION 9379-02.EPS STV9379 4 GROUND OR NEGATIVE SUPPLY Symbol Parameter Value Unit VS Supply Voltage (Pin 2) (see note 1) 50 V V6 Flyback Peak Voltage (Pin 6) (see note 1) 100 V - 0.3, + VS V V1 , V7 Amplifier Input Voltage (Pins 1-7) (see note 1) IO Maximum Output Peak Current (see notes 2 and 3) 1.5 A I3 Maximum Sink Current (first part of flyback) (t < 1ms) 1.5 A I3 Maximum Source Current (t < 1ms) 1.5 A VESD ESD susceptibility : EIAJ Norm (200pF discharged through 0Ω) 300 V Toper Operating Ambient Temperature - 20, + 75 o C Tstg Storage Temperature - 40, + 150 o Tj Junction Temperature +150 o Notes : 1. 2. 3. C C 9379-01.TBL ABSOLUTE MAXIMUM RATINGS Versus Pin 4. The output current can reach 4A peak for t ≤ 10µs (up to 120Hz). Provided SOAR is respected (see Figures 1 and 2). THERMAL DATA Parameter R th (j-c) Junction-case Thermal Resistance Tt Temperature for Thermal Shutdown 2/5 Value Max. 3 Unit o C/W 150 o C ∆Tt Hysteresis on Tt 10 o Tjr Recommended Max. Junction Temperature 120 o C C 9379-02.TBL Symbol STV9379 ELECTRICAL CHARACTERISTICS (VS = 42V, TA = 25oC, unless otherwise specified) Parameter Test Conditions VS Operating Supply Voltage Range Versus Pin 4 I2 Pin 2 Quiescent Current I3 = 0, I5 = 0 I3 = 0, I5 = 0 Min. I6 Pin 6 Quiescent Current Max. Peak Output Current I1 Amplifier Bias Current V1 = 25V, V 7 = 26V I7 Amplifier Bias Current V1 = 26V, V 7 = 25V ∆VIO/dt Max. 42 V 10 20 mA 10 30 mA 10 IO VIO Typ. 5 1 A - 0.15 -1 µA - 0.15 -1 µA 7 mV Offset Voltage Offset Drift versus Temperature µV/oC - 10 GV Voltage Gain V5L Output Saturation Voltage to GND (Pin 4) I5 = 1A V5H Output Saturation Voltage to Supply (Pin 6) VD5 - 6 VD3 - 2 Unit 80 dB 1 1.5 V I5 = - 1A 1.6 2.1 V Diode Forward Voltage between Pins 5-6 I5 = 1A 1.5 2 V Diode Forward Voltage between Pins 3-2 I3 = 1A 1.5 2 V V3L Saturation Voltage on Pin 3 I3 = 20mA 0.8 1.2 V V3SH Saturation Voltage to Pin 2 (2nd part of flyback) I3 = - 1A 2.1 2.9 V 9379-03.TBL Symbol APPLICATION CIRCUITS AC COUPLING +VS CF 2 6 3 FLYBACK GENERATOR R5 1 POWER AMPLIFIER 5 0.22µF 1.5Ω 7 THERMAL PROTECTION VREF STV9379 4 R3 Rd (*) Ly Yoke R4 CL R2 9379-03.EPS R1 Ly Ly < Rd < (*) 50µs 20µs 3/5 STV9379 APPLICATION CIRCUITS (continued) DC COUPLING +VS CF 2 3 6 FLYBACK GENERATOR R5 1 Vertical Position Adjustment POWER AMPLIFIER 5 7 0.22µF 1.5Ω VREF+ THERMAL PROTECTION STV9379 4 Rd (*) Ly Yoke -VEE R2 9379-04.EPS R1 Ly Ly < Rd < (*) 50µs 20µs Figure 1 : Output Transistors SOA (for secondary breakdown) 10 Figure 2 : SecondaryBreakdown Temperature Derating Curve (ISB = secondary breakdown current) ISB (%) I C (A) 100 @ T case = 25°C 90 1 80 t = 1ms t = 10ms t = 100ms V CE (V) 10 -2 1 4/5 10 10 2 T case (°C) 60 25 50 75 100 125 9379-06.EPS 70 9379-05.EPS 10 -1 STV9379 PM-HEPTV.EPS PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWATT Min. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia. Millimeters Typ. 2.4 1.2 0.35 0.6 2.41 4.91 7.49 2.54 5.08 7.62 10.05 Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4 Min. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 0.668 0.587 0.848 0.891 3 15.8 6.6 0.102 0.594 0.236 2.8 5.08 3.65 0.100 0.200 0.300 0.396 16.97 14.92 21.54 22.62 2.6 15.1 6 Inches Typ. 0.118 0.622 0.260 0.110 0.200 3.85 0.144 HEPTV.TBL Dimensions 0.152 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical comp onents in lifesupport devicesor systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - All Rights Reserved 2 Purchase of I C Components of STMicroelectronics, conveys a license under the Philips I 2C Patent. Rights to use these components in a I 2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5