T820W T830W SNUBBERLESS TRIAC FEATURES ITRMS = 8 A VDRM = VRRM = 400V to 700V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 A1 A2 G DESCRIPTION The T820/830W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. A1 A2 G ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2 t dI/dt Tstg Tj Tl Symbol VDRM VRRM April 1995 Parameter Value Unit Tc= 95°C 8 A tp = 16.7 ms (1 cycle, 60 Hz) 88 A tp = 10 ms (1/2 cycle, 50 Hz) 100 I2t Value (half-cycle, 50 Hz) tp = 10 ms 50 A2s Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs. Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case °C 260 °C T820 / 830-xxxW Parameter Repetitive peak off-state voltage Tj = 125°C - 40 to + 150 - 40 to + 125 Unit 400 600 700 400 600 700 V 1/5 T820W / 830W THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 50 °C/W Rth(j-c) Junction to case for A.C (360° conduction angle) 3.1 °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T820 T830 Unit 20 30 mA IGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX VGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V tgt VD=VDRM IG = 500mA dlG/dt= 3Aµs Tj= 25°C I-II-III TYP 2 µs IH * IT= 100mA Tj= 25°C MAX Gate open 35 50 VTM * ITM= 11A tp= 380µs Tj= 25°C MAX 1.5 V IDRM IRRM VDRM rated VRRM rated Tj= 25°C MAX 10 µA Tj= 125°C MAX 2 mA Tj= 125°C MIN 200 300 V/µs (see note) Tj= 125°C MIN 10 20 V/µs dV/dt * (dV/dt)c * Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 4.5 A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a snuber R-C network accross T820W / T830W triacs. 2/5 T820W / 830W Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. 10 180 O = 180 10 o o 8 = 90 6 = 60 = 30 -90 -95 8 = 120 4 Tcase (o C) P (W) P(W) -100 o 6 o Rth = 0 o C/W 2.5 o C/W 5 o C/W 7.5 o C/W 4 o -105 -110 -115 2 2 0 0 1 2 3 4 5 6 7 8 Fig.3 : RMS on-state current versus case temperature. 10 -120 Tamb (oC) I T(RMS) (A) 0 -125 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. Zth/Rth I T(RMS) (A) 1 Zth (j-c) 8 = 180 o 0.1 6 Zt h( j-a) 4 0.01 2 o Tcase( C) 0 0 10 20 30 40 50 tp (s) 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] 1E-2 1E-1 1E +0 1E +1 1 E+2 5 E +2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 100 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1E-3 o Tj initial = 25 C 80 Igt 60 40 Ih 20 Number of cycles Tj(oC) -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 T820W / 830W Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A 2 s) 1000 I TM (A) 1000 Tj initial = 25oC I TSM 100 100 Tj initial o 25 C I2t 10 Tj max 10 1 tp(ms) 1 1 VTM (V) 10 4/5 Tj max Vto =0.9V Rt =0.048 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 T820W / 830W PACKAGE MECHANICAL DATA ISOWATT220AB REF. A B B1 C D E H I J L M N N1 O P DIMENSIONS Millimeters Inches Min. Max. 10 15.9 9.8 28.6 10.4 16.4 10.6 30.6 16 typ 9 4.4 3 2.5 0.4 2.5 4.95 2.4 1.15 0.75 9.3 4.6 3.2 2.7 0.7 2.75 5.2 2.7 1.7 1 Min. 0.393 0.626 0.385 1.126 0.630 0.354 0.173 0.118 0.098 0.015 0.098 0.195 0.094 0.045 0.030 Max. 0.409 0.645 0.417 1.204 typ 0.366 0.181 0.126 0.106 0.027 0.108 0.204 0.106 0.067 0.039 Cooling method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 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