STMICROELECTRONICS TSH150I

TSH150

WIDE BANDWIDTH AND BIPOLAR INPUTS
SINGLE OPERATIONAL AMPLIFIER
LOW DISTORTION
GAIN BANDWIDTH PRODUCT : 150MHz
UNITY GAIN STABLE
SLEW RATE : 190V/µs
VERY FAST SETTLING TIME : 20ns (0.1%)
N
DIP8
(Plastic Package)
DESCRIPTION:
The TSH150 is a wideband monolithic operational
amplifier, internally compensated for unity-gain
stability.
Low noise and low distortion, wide bandwidth and
high linearity make this amplifier suitable for RF and
video applications. Short circuit protection is provided by an internal current-limiting circuit.
The TSH150 has internal electrostatic discharge
(ESD) protection circuits and fulfills MILSTD883CClass2.
D
SO8
(Plastic Micropackage)
ORDER CODES
Part
Number
Temperature
Range
TSH150C
0oC, 70oC
o
TSH150I
o
-40 C, 125 C
Package
N
D
•
•
•
•
150-01.TBL
..
..
.
PIN CONNECTIONS (top view)
Offs et Null 1
1
8
Offse t Null 2
Inverting Input
2
7
VCC+
Non-inve rting Input
3
6
Output
4
5
N.C.
150-01.EPS
VCC
June 1998
1/7
TSH150
SCHEMATIC DIAGRAM
7 VCC +
non inverting
input
Inte rna l
Vref
3
6
output
2
Cc
inverting
input
1
Offset N1
8
Offset N2
150-02.EPS
4
VCC-
INPUT OFFSET VOLTAGE NULL CIRCUIT
TS H150
N2
N1
150-03.EPS
100kΩ
VCC
Symbol
Value
Unit
VCC
Supply Voltage
Parameter
±7
V
Vid
Differential Input Voltage
±5
V
Vi
Input Voltage Range
±5
V
Iin
Current On Inputs
Current On Offset Null Pins
±50
±20
mA
Toper
Operating Free-Air Temperature Range
Tstg
Storage Temperature Range
TSH150C
TSH150I
0 to +70
-40 to +125
o
-65 to 150
o
C
C
150-02.TBL
ABSOLUTE MAXIMUM RATINGS
OPERATING CONDITIONS
2/7
Parameter
VCC
Supply Voltage
Vic
Common Mode Input Voltage Range
Value
Unit
±3 to ±6
-
V
+
VCC +2 to VCC -1
V
150-03.TBL
Symbol
TSH150
ELECTRICAL CHARACTERISTICS
VCC = ± 5V, Tamb = 25oC (unless otherwise specified)
Vio
DV io
Iib
Iio
ICC
Avd
Vicm
CMR
SVR
Vo
Parameter
Input Offset Voltage
Tmin ≤ Tamb ≤ Tmax.
Input Offset Voltage Drift
Tmin ≤ Tamb ≤ Tmax.
Input Bias Current
Input Offset Current
Supply Current, no load
Tmin ≤ Tamb ≤ Tmax.
Large Signal Voltage Gain
Vo = ±2.5V
GBP
SR
en
Kov
ts
tr, tf
td
∅m
THD
FPB
10
5
0.1
VCC = ± 5V
VCC = ± 3V
VCC = ±6V
VCC = ± 5V
See test waveform figure
Note 2 :
Full power bandwidth =
Max.
5
7
Unit
mV
23
21
25
µV/ C
30
2
µA
µA
mA
30
28
40
32
V/V
800
300
200
-3 to +4
60
1300
850
650
-3.5 to +4.5
100
50
±3
70
+3.5
-3.7
+3.3
-3.5
RL = 50Ω
± 2.8
RL = 100Ω
RL = 50Ω
± 2.9
± 2.7
Output Short Circuit Current
Vid = ±1V, Vo = 0V
Gain Bandwidth Product
AVCL = 100, R L = 100Ω, CL = 15pF, f = 7.5MHz
Slew Rate
Vin = ± 2V, AVCL = 1, RL = 100Ω, CL = 15pF
Equivalent Input Voltage Noise
R S = 50Ω
fo = 1kHz
fo = 10kHz
fo = 100kHz
fo = 1MHz
Overshoot
Vin = ± 2V, AVCL = 1, RL = 100Ω, CL = 15pF
Settling Time 0.1% - (note 1)
Vin = ± 1V, AVCL = -1
Rise and Fall Time - (note 1)
Vin = ±100mV, AVCL = 2
Delay Time - (note 1)
Vin = ±100mV, AVCL = 2
Phase Margin
AVM = 1, RL = 100Ω, CL = 15pF
Total Harmonic Distortion
AVCL = 10, f = 1KHz, Vo = ± 2.5V, no load
Full Power Bandwidth - (note 2)
Vo = 5Vpp, R L = 100Ω
Vo = 2Vpp, R L = 100Ω
Note 1 :
TSH150C, I
Typ.
0.3
o
RL = ∞
RL= 100Ω
RL = 50Ω
Input Common Mode Voltage Range
Common Mode Rejection Ratio
Vic = Vicm min.
Supply Voltage Rejection Ratio
VCC = ± 5V to ± 3V
Output Voltage
RL = 100Ω
Tmin ≤ Tamb ≤ Tmax.
Io
Min.
±50
±100
V
dB
dB
V
mA
MHz
150
V/µs
100
190
7
6.5
6.2
5.5
nV
√

Hz
%
5
ns
20
ns
3.5
ns
2.5
Degrees
50
%
0.02
MHz
150-04.TBL
Symbol
12
30
SR
Π Vopp
3/7
TSH150
TEST WAVEFORM
EVALUATION CIRCUIT
+5V
10µF
50Ω
10nF
ts
Input
0.1% of edge amplitude
Output
1kΩ
90%
50%
50Ω
td
10nF
tr
10%
Vin
10µF
1kΩ
CF
PRINTED CIRCUIT LAYOUT
As for any high frequency device, a few rules must
be observed when designing the PCB to get the best
performances from this high speed op amp.
From the most to the least important points :
• Each power supply lead has to be bypassed
to ground with a 10nF ceramic capacitor very
close to the device and a 10µF tantalum capacitor.
• To provide low inductance and low resistance
common return, use a ground plane or common point return for power and signal.
• All leads must be wide and as short as possible especially for op amp inputs. This is in
order to decrease parasitic capacitance and
inductance.
4/7
• Use small resistor values to decrease time
constant with parasitic capacitance. Be aware
on TSH150 device of the Iio error and input
noise currents with high feedback resistor values.
• Choose component sizes as small as possible
(SMD).
• On output, decrease capacitor load so as to
avoid circuit stability being degraded which
may cause oscillation. You can also add a
serial resistor in order to minimise its influence.
• One can add in parallel with feedback resistor
a few pF ceramic capacitor CF adjusted to
optimize the settling time.
150-05.EPS
150-04.EPS
-5V
TSH150
MACROMODEL
..
.
LOW DISTORTION
GAIN BANDWIDTH PRODUCT : 150MHz
UNITY GAIN STABLE
..
SLEW RATE : 190V/µs
VERY FAST SETTLING TIME : 20ns (0.1%)
Applies to : TSH150C,I
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIV E POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TSH150 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=1.568191E-15 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 1.040000E+02
RIN 15 16 1.040000E+02
RIS 11 15 3.264539E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC -9.162265E-05
VOFN 13 14 DC 0
IPOL 13 5 1.000000E-03
CPS 11 15 5.757255E-12
DINN 17 13 MDTH 400E-12
VIN 17 5 1.5000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.500000E+00
FCP 4 5 VOFP 2.200000E+01
FCN 5 4 VOFN 2.200000E+01
FIBP 2 5 VOFP 1.000000E-02
FIBN 5 1 VOFN 1.000000E-02
* AMPLIFYING STAGE
FIP 5 19 VOFP 4.370000E+02
FIN 5 19 VOFN 4.370000E+02
RG1 19 5 1.124121E+03
RG2 19 4 1.124121E+03
CC 19 29 2.000000E-09
HZTP 30 29 VOFP 5.574976E+01
HZTN 5 30 VOFN 5.574976E+01
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 5.000000E+02
VIPM 28 4 5.000000E+01
HONM 21 27 VOUT 5.000000E+02
VINM 5 27 5.000000E+01
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 2.180423E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.511965E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.511965E+00
.ENDS
ELECTRICAL CHARACTERISTICS
VCC = ±5V, Tamb = 25oC (unless otherwise specified)
Symbol
Vio
Avd
ICC
Vicm
VOH
VOL
Isink
Isource
GBP
SR
∅m
ts
Conditions
RL = 100Ω
No load
RL = 100Ω
RL = 100Ω
VO = 0V
VO = 0V
RL = 100Ω, C L = 15pF
RL = 100Ω, C L = 15pF
RL = 100Ω, C L = 15pF
AV = -1 at 0.1%
Value
0
1
21
-3.5 to 4.5
+3.6
-3.6
108
108
147
180
42
22.6
Unit
mV
V/mV
mA
V
V
V
mA
mA
MHz
V/µs
Degrees
ns
5/7
TSH150
PM-DIP8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
A
a1
B
b
b1
D
E
e
e3
e4
F
i
L
Z
6/7
Min.
Millimeters
Typ.
3.32
0.51
1.15
0.356
0.204
Max.
1.65
0.55
0.304
10.92
9.75
7.95
Min.
0.020
0.045
0.014
0.008
Max.
0.065
0.022
0.012
0.430
0.384
0.313
2.54
7.62
7.62
3.18
Inches
Typ.
0.131
0.100
0.300
0.300
6.6
5.08
3.81
1.52
0.125
0260
0.200
0.150
0.060
DIP8.TBL
Dimensions
TSH150
PM-SO8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
Min.
Millimeters
Typ.
0.1
0.65
0.35
0.19
0.25
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
Min.
Inches
Typ.
0.026
0.014
0.007
0.010
Max.
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.189
0.228
0.197
0.244
0.004
o
45 (typ.)
4.8
5.8
5.0
6.2
1.27
3.81
3.8
0.4
0.050
0.150
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
SO8.TBL
Dimensions
o
8 (max.)
ORDER CODE :
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publ ication supersedes and replaces all infor mation
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of STMicroelectronics.
 The ST logo is a trademark of STMicroelectronics
 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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