TS512,A PRECISION DUAL OPERATIONAL AMPLIFIER ■ ■ ■ ■ ■ ■ ■ LOW OFFSET VOLTAGE : 500µV max. LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT N DIP8 (Plastic Package) HIGH CHANNEL SEPARATION ESD INTERNAL PROTECTION ■ MACROMODEL INCLUDED IN THIS SPECIFICATION D SO8 (Plastic Micropackage) DESCRIPTION The TS512 is a high performance dual operational amplifier with frequency and phase compensation built into the chip. The internal phase compensation allows stable operation as voltage follower in spite of its high gain-bandwidth products. The circuit presents very stable electrical characteristics over the entire supply voltage range, and is particularly intended for professional and telecom applications (active filter, etc). ORDER CODE Package Part Number Temperature Range TS512I TS512AI -40°C, +125°C -40°C, +125°C N D • • • • N = Dual in Line Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT) PIN CONNECTIONS (top view) 8 VCC + 7 Output - 6 Inve rting Input 2 + 5 Non-inverting Input 2 Output 1 1 Inve rting Input 1 2 - Non-inverting Input 1 3 + VCC - 4 March 2001 1/6 TS512, A SCHEMATIC DIAGRAM (1/2 TS512) Non-inverting input Inverting input Vcc+ R1 Q1 R3 R2 R4 Q13 Q2 Q5 Q4 Q6 Q3 D1 R6 R5 Q12 Q7 Output Q9 Q10 Q8 D2 Q11 R7 Q18 Q17 C1 Q19 Q14 Q15 Q16 Q23 D3 D5 Q21 Q22 Q20 C2 D4 R9 R8 R10 Vcc- ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Supply Voltage Value Unit ±18 V ±V CC Vi Input Voltage Vid Differential Input Voltage ±(VCC - 1) Operating Free-Air Temperature Range -40 to +125 °C Toper ptot Tj Tstg Power Dissipation at Tamb = 70°C Junction Temperature Storage Temperature Range 500 mW + 150 °C -65 to +150 °C ELECTRICAL CHARACTERISTICS Vcc = ±15V, Tamb = 25°C (unless otherwise specified) Symbol Conditi ons Vio Value Unit 0 mV Avd RL = 2kΩ 100 V/mV Icc No load, each amplifier 350 µA Vicm -13.5 to 13.5 V VOH RL = 2kΩ +13 V VOL RL = 2kΩ -13 mA Isink Vo = 0V 23 mA Isource Vo = 0V 23 mA GBP RL = 2kΩ, CL = 100pF 3 MHz SR RL = 2kΩ, CL = 100pF 1.4 V/µs ∅m RL = 2kΩ, CL = 100pF 55 Degrees 2/6 TS512, A ELECTRICAL CHARACTERISTICS VCC = ±15V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit 0.7 1.2 mA 50 150 300 nA Icc Supply Current Iib Input Bias Current Tmin ≤ Top ≤ Tmax Ri Input Resistance, f = 1kHz 1 MΩ Input Offset Voltage mv TS512 TS512A Vio Tmin ≤ Top ≤ Tmax ∆V io Input Offset Voltage Drift Tmin ≤ Top ≤ Tmax Iio Input Offset Current Tmin ≤ Top ≤ Tmax TS512 TS512A 5 Ios Output Short Circuit Current Avd Large Signal Voltage Gain RL = 2kΩ GBP Gain-bandwidth Product, f = 100kHz ±Vopp V opp SR CMR SVR Vo1/Vo2 3.5 1.5 µV/°C Input Offset Current Drift Tmin ≤ Top ≤ Tmax THD Vcc = ±15V Vcc = ± 4V Large Signal Voltage Swing R L = 10kΩ Vcc = ±15V Vcc = ± 4V Channel Separation, nA 0.08 nA ------°C 23 mA dB 100 95 1.8 3 MHz 8 10 18 nV -----------Hz % 0.03 ±13 V ±3 V pp f = 10kHz Slew Rate Unity Gain, RL = 2kΩ Common Mode Rejection Ratio Vic = 10V Supply Voltage Rejection Ratio dVic = 10V 20 40 90 Equivalent Input Noise Voltage, f = 1kHz Rs = 50Ω Rs = 1kΩ Rs = 10kΩ Total Harmonic Distortion Av = 20dB R L = 2kΩ f = 1kHz Vo = 2Vpp Output Voltage Swing RL = 2kΩ 2.5 0.5 2 ∆Iio en 0.5 28 0.8 1.5 V/µs dB 90 dB f = 100Hz f = 1kHz 90 120 dB 3/6 TS512, A MACROMODEL ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS512 1 3 2 4 5 (analog) **************** *************** ********** ********** ***** .MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 2.600000E+01 RIN 15 16 2.600000E+01 RIS 11 15 1.061852E+02 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0 VOFN 13 14 DC 0 IPOL 13 5 1.000000E-05 CPS 11 15 12.47E-10 DINN 17 13 MDTH 400E-12 VIN 17 5 1.500000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 1.500000E+00 FCP 4 5 VOFP 3.400000E+01 FCN 5 4 VOFN 3.400000E+01 FIBP 2 5 VOFN 1.000000E-02 FIBN 5 1 VOFP 1.000000E-02 * AMPLIFYING STAGE FIP 5 19 VOFP 9.000000E+02 FIN 5 19 VOFN 9.000000E+02 RG1 19 5 1.727221E+06 RG2 19 4 1.727221E+06 CC 19 5 6.000000E-09 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 6.521739E+03 VIPM 28 4 1.500000E+02 HONM 21 27 VOUT 6.521739E+03 VINM 5 27 1.500000E+02 GCOMP 5 4 4 5 6.485084E-04 RPM1 5 80 1E+06 RPM2 4 80 1E+06 GAVPH 5 82 19 80 2.59E-03 RAVPHGH 82 4 771 RAVPHGB 82 5 771 RAVPHDH 82 83 1000 RAVPHDB 82 84 1000 CAVPHH 4 83 0.331E-09 CAVPHB 5 84 0.331E-09 EOUT 26 23 82 5 1 VOUT 23 5 0 ROUT 26 3 6.498455E+01 COUT 3 5 1.000000E-12 DOP 19 25 MDTH 400E-12 VOP 4 25 1.742230E+00 DON 24 19 MDTH 400E-12 VON 24 5 1.742230E+00 .ENDS ELECTRICAL CHARACTERISTICS Vcc = ±15V, Tamb = 25°C (unless otherwise specified) Symbol Conditi ons Vio Avd RL = 2kΩ Icc No load, per operator Vicm Value Unit 0 mV 100 V/mV 350 µA -13.5 to 13.5 V VOH RL = 2kΩ +13 V VOL RL = 2kΩ -13 V Isink Vo = 0V 23 mA Isource Vo = 0V 23 mA 4/6 RL = 2kΩ, CL = 100pF 3 MHz SR RL = 2kΩ 1.4 V/µs ∅m RL = 2kΩ, CL = 100pF 55 Degrees GBP TS512, A PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Millimeters Inches Dim. Min. A a1 B b b1 D E e e3 e4 F i L Z Typ. Max. Min. 3.32 0.51 1.15 0.356 0.204 0.020 0.045 0.014 0.008 0.065 0.022 0.012 0.430 0.384 0.313 2.54 7.62 7.62 3.18 Max. 0.131 1.65 0.55 0.304 10.92 9.75 7.95 Typ. 0.100 0.300 0.300 6.6 5.08 3.81 1.52 0.125 0260 0.200 0.150 0.060 5/6 TS512, A PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Millimeters Inches Dim. Min. A a1 a2 a3 b b1 C c1 D E e e3 F L M S Typ. Max. 0.65 0.35 0.19 0.25 1.75 0.25 1.65 0.85 0.48 0.25 0.5 4.8 5.8 5.0 6.2 0.1 Min. Typ. Max. 0.026 0.014 0.007 0.010 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.189 0.228 0.197 0.244 0.004 45° (typ.) 1.27 3.81 3.8 0.4 0.050 0.150 4.0 1.27 0.150 0.016 0.6 0.157 0.050 0.024 8° (max.) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infring ement of patents or other righ ts of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change witho ut notice. This publ ication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life suppo rt devices or systems withou t express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www. st.com 6/6