TFMS 5..0 Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TFMS 5300 TFMS 5360 TFMS 5380 TFMS 5560 f0 30 kHz 36 kHz 38 kHz 56 kHz Type TFMS 5330 TFMS 5370 TFMS 5400 f0 33 kHz 36.7 kHz 40 kHz Description The TFMS 5..0 – series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the reliable function even in disturbed ambient and the protection against uncontrolled output pulses. GND VS OUT 94 8691 Features D Photo detector and preamplifier in one package D Output active low D Improved shielding against electric field disturbance D 5 Volt supply voltage, low power consumption D TTL and CMOS compatibility D Continuous transmission possible (tpi/T 0.4) (active high modules: TFMS 5..9) D Internal filter for PCM frequency D High immunity against ambient light x Block Diagram 2 Control Circuit Input 100 kW 3 PIN AGC Band Pass VS OUT Demodulator 1 GND 94 8136 TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96 1 (6) TFMS 5..0 Absolute Maximum Ratings Tamb = 25_C Parameter Test Conditions Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd (Pin 2) (Pin 2) (Pin 3) (Pin 3) x (Tamb 85 °C) t 10 s, 1 mm from case x Value –0.3...6.0 5 –0.3...6.0 5 100 –25...+85 –25...+85 50 260 Unit V mA V mA °C °C °C mW °C Typ 0.5 1.0 35 Max 0.8 Unit mA mA m 250 mV Basic Characteristics Tamb = 25_C Parameter Supply pp y Current ((Pin 2)) Transmission Distance Output Voltage Low (Pin 3) Irradiance (30 – 40 kHz) Irradiance (56 kHz) Irradiance Directivity Test Conditions VS = 5 V, Ev = 0 VS = 5 V, Ev = 40 klx, sunlight Ev = 0, test signal see fig.7, IR diode TSIP5201, IF = 1.5 A IOSL = 0.5 mA,Ee = 0.7 mW/m2, f = fo, tp/T = 0.4 Pulse width tolerance: tpo=tpi±160ms, test signal (see fig.7) Pulse width tolerance: tpo=tpi±160ms, test signal (see fig.7) Angle of half transmission distance Symbol ISD ISH d Min 0.4 VOSL Ee min 0.3 0.5 mW/m2 Ee min 0.4 0.7 mW/m2 Ee max ϕ1/2 W/m2 deg 20 ±55 Application Circuit 330 W *) 2 TFM. 5..0 TSUS 5... TSIP 5... 3 4.7 mF *) +5 V **) >10 kW optional mC 1 94 8137 GND *) only necessary to suppress power supply disturbances **) tolerated supply voltage range : 4.5 V<VS <5.5V 2 (6) TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96 TFMS 5..0 Typical Characteristics (Tamb = 25_C unless otherwise specified) Ee min – Threshold Irradiance ( mW/m2 ) E e min / E e – Rel. Responsitivity ( % ) 1.0 0.8 0.6 0.4 0.2 f = f0 "5% Df ( 3 dB ) = f0 / 10 2.0 f ( E ) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.8 0.9 1.0 1.1 1.3 1.2 f / f0 – Relative Frequency 94 8143 Figure 1. Frequency Dependence of Responsivity t po – Output Pulse Length ( m s ) 1200 1000 Input Burst Duration 800 600 400 0.0 l = 950 nm, Optical Test Signal, Fig.7 200 1.2 2.0 1.6 100 f = f0 10 10 kHz 1 100 Hz 0.1 0.1 1.0 10.0 100.0 Ee – Irradiance ( mW / m2 ) 94 8145 10.0 1.0 Ambient, l = 950 nm 1.0 10.0 E – Irradiance ( W / m2 ) Figure 3. Sensitivity in Bright Ambient TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96 10 100 1000 1.0 Ee min – Threshold Irradiance ( mW/m2 ) ^ ^ Correlation with Ambient Light Sources ( Disturbance Efect ) : 1 0W/m2 1.4 klx ( Stand.Illum.A, T = 2855 K ) 8.2 klx ( Daylight, T = 5900 K ) 0.1 1 DVs RMS – AC Voltage on DC Supply Voltage ( mV ) Figure 5. Sensitivity vs. Supply Voltage Disturbances 100.0 0.1 0.01 0.1 94 8148 Figure 2. Sensitivity in Dark Ambient Ee min – Threshold Irradiance ( mW/m2 ) 0.8 Figure 4. Sensitivity vs. Electric Field Disturbances 0 94 8146 0.4 E – Field Strength of Disturbance ( kV / m ) 94 8147 Ee min – Threshold Irradiance ( mW/m2 ) 0.7 0.8 Sensitivity in dark Ambient 0.6 0.4 0.2 0.0 –30 100.0 94 8149 0 30 60 90 Tamb – Ambient Temperature ( °C ) Figure 6. Sensitivity vs. Ambient Temperature 3 (6) TFMS 5..0 Optical Test Signal ( IR diode TSIP 5201, IF = 1.5 A, 30 pulses, f = f0, T = 10 ms ) t tpi * T * tpi w 400 ms is recommended for optimal function Output Signal VO VOH 94 8133 tpo = tpi "160 ms 1.0 T on ,T off - Output Pulse Length ( ms ) Ee 0.8 Ton 0.6 Toff 0.4 0.2 l = 950 nm, Optical Test Signal, Fig.8 0.0 0.1 VOL t 1 10 100 Ee – Irradiance ( 94 8151 1000 mW / m2 10000 ) tpo Figure 10. Output Pulse Diagram Figure 7. Output Function Optical Test Signal 1.0 600 ms t 600 ms T = 60 ms 94 8134 VO Output Signal, ( see Fig.10 ) I s – Supply Current ( mA ) Ee Vs = 5 V 0.8 0.6 0.4 0.2 VOH 0.0 –30 VOL Ton t Toff Tamb – Ambient Temperature ( °C ) 94 8150 s rel – Relative Responsitivity ( % ) Ee min – Threshold Irradiance ( mW/m2 ) 90 60 1.0 8 6 4 2 0 0.05 0.15 0.25 0.35 tp / T – Duty Cycle Figure 9. Sensitivity vs. Duty Cycle 4 (6) 30 Figure 11. Supply Current vs. Ambient Temperature Figure 8. Output Function 94 8144 0 0.8 0.6 0.4 0.2 0.0 800 0.45 94 8154 900 1000 1100 l – Wavelength ( nm ) Figure 12. Spectral Response TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96 TFMS 5..0 –20 –10 0 10 –20 20 –30 –10 0 0.2 0 10 20 –30 fy fx –40 –40 0.6 0.4 0.2 0 0.2 0.4 0.6 drel – Relative Transmission Distance Figure 13. Vertical Directivity ϕy 0.6 94 8152 94 8153 0.4 0.2 0.4 0.6 drel – Relative Transmission Distance Figure 14. Horizontal Directivity ϕx Dimensions in mm 96 12116 TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96 5 (6) TFMS 5..0 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96