U4254BM Low-Noise AM/FM Antenna Impedance Matching IC Description The U4254BM is an integrated low-noise AM/FM antenna impedance matching circuit in BICMOS technology. The device is designed in particular for car application and is suitable for windscreen and roof antennas. Features D D D D D High intercept point 2nd order for AM D Low noise output voltage D Low power consumption High dynamic range for AM and FM Integrated AGC for FM High intercept point 3rd order for FM FM amplifier adjustable to various cable impedance Block Diagram FMIN GND1 FMGAIN AGC VS VREF2 1 2 15 FM 3 4 14 5 IAGC AGC 13 12 VREF 11 AMIN FMOUT 8 AM 10 AGCADJ VREF1 AMOUT1 AMOUT 7 13932 GND2 Figure 1. Block diagram TELEFUNKEN Semiconductors Rev. A1, 08-Jul-97 1 (12) U4254BM Ordering and Package Information Extended Type Number U4254BM-AFP U4254BM-AFPG3 Package SO16 SO16 Remarks Taping corresponding, ICE-286-3 Pin Description FMIN 1 16 NC GND1 2 15 FMOUT FMGAIN 3 14 VS AGC 4 13 AGCADJ VREF2 5 12 VREF1 NC 6 11 AMOUT1 GND2 7 10 AMOUT AMIN 8 9 13933 NC Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 Symbol FMIN GND1 FMGAIN AGC VREF2 NC GND2 AMIN NC AMOUT AMOUT1 VREF1 AGCADJ 14 15 16 VS FMOUT NC Function FM input Ground for FM part FM gain adjustment AGC output Reference voltage 2 output Not connected Ground for AM part AM input Not connected AM output AM output Reference voltage 1 output Adjustment FM wide-band AGC threshold Supply voltage FM output Not connected Figure 2. Pinning 2 (12) TELEFUNKEN Semiconductors Rev. A1, 01-Jul-97 U4254BM Pin Description AGC FMIN 4 FMIN is the input of the FM amplifier. It is the base of a bipolar transistor. A resistor or a coil is connected between FMIN and VREF2. If a coil is used, noise performance is excellent. ESD VS 1 FMIN 12392 ESD 12390 Figure 5. Figure 3. AGCADJ GND1 To avoid crosstalk between AM and FM signals, the circuit has two separate ground pins. GND1 is the ground for the FM part. FMGAIN The threshold of the AGC can be adjusted by variing the DC current at pin AGCADJ. If pin AGCADJ is connected directly to GND1, the threshold is set to 96 dBµV at the FM amplifier output. If a resistor is connected between AGCADJ and GND1, the threshold is shifted to higher values with increasing resistances. If AGCADJ is open, the threshold is set to 106 dBµV. The DC current of the FM amplifier transistor is adjusted by an external resistor which is connected between FMGAIN and GND1. In order to influence the AC gain of the amplifier, a resistor is connected in series to an capacitor between FMGAIN and GND1. The capacitor has to be a short at frequencies of 100 MHz. 65 kW 12397 ESD 13 AGCADJ Figure 6. ESD FMGAIN 3 12391 Figure 4. FMOUT The FM amplifiers output is an open collector of a bipolar RF-transistor. It should be connected to VS via a coil. 15 FMOUT AGC DC current flows into the AGC pin at high FM antenna input signals. This current has to be amplified via the current gain of an external PNP transistor that feeds a PIN-diode. This diode dampens the antenna input signal and protects the amplifier input against overload. The maximum current which flows in the AGC pin is approximately 1 mA. In low end applications, the AGC function is not necessary and therefore the external components can be omitted. TELEFUNKEN Semiconductors Rev. A1, 08-Jul-97 ESD 12398 Figure 7. 3 (12) U4254BM AMIN VREF1 The AM input has an internal bias voltage. The DC voltage at this pin is VRef1/2. The input resistance is about 470 kW. The input capacitance is less than 10 pF. VREF1 is the stabilized voltage for the AM amplifier and the AGC block. To achieve excellent noise performance at LW frequencies, it is recommended that this pin is connected to ground via an external capacitor of about 1 mF. VREF1/2 VS 470 kW 8 AMIN 12 ESD 12394 VREF1 ESD Figure 8. GND1 12396 AMOUT, AMOUT1 Figure 10. The buffered AM amplifier consists of a complementary pair of CMOS source followers. The transistor gates are connected to AMIN. The pin AMOUT is the NMOS transistor’s source, pin AMOUT1 is the PMOS transistor’ source. Due to the two different DC levels of these pins, they have to be connected together via an external capacitor of about 100 nF. By means of this technique an excellent dynamic range can be achieved. VREF2 For the DC biasing of the FM amplifier a second voltage reference circuit is integrated. Because of temperature independence of the collector current the output voltage has a negative temperature coefficient of about –1 mV/K. To stabilize this voltage an external capacitor to ground of a few nF is recommended. AMOUT1 5 ESD 11 VREF2 AMOUT ESD ESD 10 GND1 12393 Figure 11. 13768 GND2 Figure 9. 4 (12) GND2 is the ground for the AM amplifier. TELEFUNKEN Semiconductors Rev. A1, 01-Jul-97 U4254BM Functional Description The U4254BM is an integrated AM/FM antenna impedance matching circuit. It compensates cable losses between the antenna (for example windscreen, roof or bumper antennas) and the car radio which is usually placed far away from the antenna. The FM amplifier provides excellent noise performance. External components are used to adjust the gain and the input-output matching impedance. Therefore it is possible to adjust the amplifier to various cable impedances (usually 50, 75 or 150 W). To protect the amplifier against input overload an Automatic Gain Control (AGC) is included on the chip. The AGC observes the AC voltage at the FM amplifier output, rectifies this signal, and delivers DC current to dampen the input antenna signal via an external PIN diode. The threshold for the AGC is adjustable. Simple and temperature compensated biasing is possible due to the integrated voltage reference VRef2. The AM part consists of a buffer amplifier. The voltage gain of this stage is approximately one. The input resistance is 470 kW, the input capacitance less than 10 pF. The output resistance is 125 W. An excellent dynamic range is achieved due to the complementary CMOS source follower stage. Absolute Maximum Ratings Reference point is ground (Pins 2 and 7) Parameters Supply voltage Power dissipation, Ptot at Tamb = 85°C Junction temperature Ambient temperature Storage temperature Electrostatic handling (HBM) Symbol VS Ptot Tj Tamb Tstg VESD Value 8.8 460 150 –40 to +85 –50 to +150 2000 Unit V mW °C °C °C V Symbol RthJA Value 140 Unit K/W " Thermal Resistance Parameters Junction ambient TELEFUNKEN Semiconductors Rev. A1, 08-Jul-97 5 (12) U4254BM Electrical Characteristics See test circuit VS = 8 V, Tamb = 25°C, unless otherwise specified ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ D ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ W ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ W ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ W ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ W ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ Parameters Supply voltage Supply currents Reference voltage 1 output (I12 = 0) Reference voltage 2 output (I5 = 0) Temperature dependence of VREF2 AM amplifier Input resistance Input capacitance Output resistance Voltage gain Output noise voltage (rms value) 2nd harmonic FM amplifier Supply current limit Input resistance Output resistance Power gain Output noise voltage 3rd order output intercept AGC AGC input voltage threshold AGC input voltage threshold AGC output current 6 (12) Test Conditions / Pins Pin 14 Pin 14 Pin 12 Symbol Vs Is VRef1 Min. 7.2 Typ. 8 4 5.5 Max. 8.8 Unit V mA V Pin 5 VRef2 2.6 V Pin 5 VRef2/ T –1 mV/K Pin 8 Pin 8 Pin 10 Pin 10 / Pin 8 Pin 10 S1 switched to 2; B = 6 kHz 150 kHz to 300 kHz 500 kHz to 6.5 kHz Pin 10 S2 switched to 1 fAMIN = 500 kHz, Output voltage = 110 dBµV RAMIN CAMIN ROUT a 470 k pF VN1 VN2 –2 –6 –65 IAGC, IAGCADJ = 0 A, Pin 15 f = 100 MHz Pin 1 f = 100 MHz Pin 15 f = 100 MHz Pin 15/ Pin 1 Pin 15 f = 100 MHz, B = 120 kHz f = 100 MHz Pin 15 I15 RFMIN RFMOUT G VN 33 50 50 5 0 f = 100 MHz Pin 15 S2 switched to 1; AGC threshold DC current is 10 µA at Pin 4 f = 100 MHz Pin 15 S2 switched to 2; AGC threshold DC current is 10 µA at Pin 4 AGC active 10 125 0.85 dBµV dBµV dBc 35 mA dB dBµV 132 dBµV Vth1 96 dBµV Vth2 106 dBµV IAGC 1.2 mA TELEFUNKEN Semiconductors Rev. A1, 01-Jul-97 U4254BM Test Circuit VS 1 2.2 mH FMOUT 2 S2 5 kW 2.2 nF I15 I14 AMOUT I13 2.2mF 100 nF 2.2 nF 100 nF + 9 16 150 W 13934 U4254BM 1 8 I4 FMIN 2.2 mH 2.2 nF 22 W S1 51 W 2.2 nF 2 1 15 pF VS 1 nF 2.2 nF AMIN Figure 12. TELEFUNKEN Semiconductors Rev. A1, 08-Jul-97 7 (12) U4254BM FM Intermodulation Distortion dBmV dBmV Output 108 dBmV Input 103 dBmV 58 dBmV Gain = 5 dB AGC not active 90 95 100 105 Input 118 dBmV dBmV 90 MHz 95 100 95 100 MHz dBmV Output 100 dBmV 50 dBmV AGC active 90 105 105 MHz 90 95 100 105 MHz 12400 Figure 13. 8 (12) TELEFUNKEN Semiconductors Rev. A1, 01-Jul-97 U4254BM Test Circuit for AM Large Signal Behavior Analyzer AMOUT1 100 nF LPF AMIN DUT 5 kW 1 nF fcutoff = 500 kHz AMOUT 50 W Rin = 50 W 100 nF 115 dBmV 75 dBmV 50 W f = 500 kHz V0 13935 Figure 14. AM Harmonic Distortion VAMOUT (dBmV) 115 dBmV 110 90 70 55dBmV 50 0.5 1.0 45 dBmV 1.5 f (MHz) 13936 Figure 15. TELEFUNKEN Semiconductors Rev. A1, 08-Jul-97 9 (12) 10 (12) PIN V 200 nF BA679 1 nF 2.2 nF 2.2 nF 1 kW R2 2.2 nF 22 W Vs R 1 ( W) 150 270 390 470 620 FM cable impedance 50 75 100 125 150 R 1 and R2 depend on used FM cable impedance Protection circuit BC558 510 W 2.2 nF FM ANTENNA AM 160 86 51 33 22 R 2 ( W) AMIN VREF2 VS AGC FMGAIN FMGND FMIN VRef I AGC FM 2.2 nF AM VREF1 AGCADJ FMOUT AMOUT AMOUT1 AMGND AGC R1 + 1m F 100 nF 100 nF 2.2 m H VS = 8.2 V 2.2 m H 39 pF Output U4254BM Application Circuit 13937 Figure 16. TELEFUNKEN Semiconductors Rev. A1, 01-Jul-97 U4254BM Package Information Package SO16 Dimensions in mm 94 8875 TELEFUNKEN Semiconductors Rev. A1, 08-Jul-97 11 (12) U4254BM Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 12 (12) TELEFUNKEN Semiconductors Rev. A1, 01-Jul-97