TEMIC U4254BM

U4254BM
Low-Noise AM/FM Antenna Impedance Matching IC
Description
The U4254BM is an integrated low-noise AM/FM
antenna impedance matching circuit in BICMOS
technology. The device is designed in particular for car
application and is suitable for windscreen and roof
antennas.
Features
D
D
D
D
D High intercept point 2nd order for AM
D Low noise output voltage
D Low power consumption
High dynamic range for AM and FM
Integrated AGC for FM
High intercept point 3rd order for FM
FM amplifier adjustable to various cable impedance
Block Diagram
FMIN
GND1
FMGAIN
AGC
VS
VREF2
1
2
15
FM
3
4
14
5
IAGC
AGC
13
12
VREF
11
AMIN
FMOUT
8
AM
10
AGCADJ
VREF1
AMOUT1
AMOUT
7
13932
GND2
Figure 1. Block diagram
TELEFUNKEN Semiconductors
Rev. A1, 08-Jul-97
1 (12)
U4254BM
Ordering and Package Information
Extended Type Number
U4254BM-AFP
U4254BM-AFPG3
Package
SO16
SO16
Remarks
Taping corresponding, ICE-286-3
Pin Description
FMIN 1
16 NC
GND1 2
15 FMOUT
FMGAIN 3
14 VS
AGC
4
13 AGCADJ
VREF2
5
12 VREF1
NC
6
11 AMOUT1
GND2
7
10 AMOUT
AMIN 8
9
13933
NC
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
Symbol
FMIN
GND1
FMGAIN
AGC
VREF2
NC
GND2
AMIN
NC
AMOUT
AMOUT1
VREF1
AGCADJ
14
15
16
VS
FMOUT
NC
Function
FM input
Ground for FM part
FM gain adjustment
AGC output
Reference voltage 2 output
Not connected
Ground for AM part
AM input
Not connected
AM output
AM output
Reference voltage 1 output
Adjustment FM wide-band
AGC threshold
Supply voltage
FM output
Not connected
Figure 2. Pinning
2 (12)
TELEFUNKEN Semiconductors
Rev. A1, 01-Jul-97
U4254BM
Pin Description
AGC
FMIN
4
FMIN is the input of the FM amplifier. It is the base of a
bipolar transistor. A resistor or a coil is connected
between FMIN and VREF2. If a coil is used, noise performance is excellent.
ESD
VS
1
FMIN
12392
ESD
12390
Figure 5.
Figure 3.
AGCADJ
GND1
To avoid crosstalk between AM and FM signals, the
circuit has two separate ground pins. GND1 is the ground
for the FM part.
FMGAIN
The threshold of the AGC can be adjusted by variing the
DC current at pin AGCADJ. If pin AGCADJ is connected
directly to GND1, the threshold is set to 96 dBµV at the
FM amplifier output. If a resistor is connected between
AGCADJ and GND1, the threshold is shifted to higher
values with increasing resistances. If AGCADJ is open,
the threshold is set to 106 dBµV.
The DC current of the FM amplifier transistor is adjusted
by an external resistor which is connected between
FMGAIN and GND1. In order to influence the AC gain
of the amplifier, a resistor is connected in series to an
capacitor between FMGAIN and GND1. The capacitor
has to be a short at frequencies of 100 MHz.
65 kW
12397
ESD
13
AGCADJ
Figure 6.
ESD
FMGAIN
3
12391
Figure 4.
FMOUT
The FM amplifiers output is an open collector of a bipolar
RF-transistor. It should be connected to VS via a coil.
15
FMOUT
AGC
DC current flows into the AGC pin at high FM antenna
input signals. This current has to be amplified via the current gain of an external PNP transistor that feeds a
PIN-diode. This diode dampens the antenna input signal
and protects the amplifier input against overload. The
maximum current which flows in the AGC pin is approximately 1 mA. In low end applications, the AGC function
is not necessary and therefore the external components
can be omitted.
TELEFUNKEN Semiconductors
Rev. A1, 08-Jul-97
ESD
12398
Figure 7.
3 (12)
U4254BM
AMIN
VREF1
The AM input has an internal bias voltage. The DC
voltage at this pin is VRef1/2. The input resistance is about
470 kW. The input capacitance is less than 10 pF.
VREF1 is the stabilized voltage for the AM amplifier and
the AGC block. To achieve excellent noise performance
at LW frequencies, it is recommended that this pin is
connected to ground via an external capacitor of about
1 mF.
VREF1/2
VS
470 kW
8
AMIN
12
ESD
12394
VREF1
ESD
Figure 8.
GND1
12396
AMOUT, AMOUT1
Figure 10.
The buffered AM amplifier consists of a complementary
pair of CMOS source followers. The transistor gates are
connected to AMIN. The pin AMOUT is the NMOS
transistor’s source, pin AMOUT1 is the PMOS transistor’
source. Due to the two different DC levels of these pins,
they have to be connected together via an external
capacitor of about 100 nF. By means of this technique an
excellent dynamic range can be achieved.
VREF2
For the DC biasing of the FM amplifier a second voltage
reference circuit is integrated. Because of temperature
independence of the collector current the output voltage
has a negative temperature coefficient of about –1 mV/K.
To stabilize this voltage an external capacitor to ground
of a few nF is recommended.
AMOUT1
5
ESD
11
VREF2
AMOUT
ESD
ESD
10
GND1
12393
Figure 11.
13768
GND2
Figure 9.
4 (12)
GND2 is the ground for the AM amplifier.
TELEFUNKEN Semiconductors
Rev. A1, 01-Jul-97
U4254BM
Functional Description
The U4254BM is an integrated AM/FM antenna impedance matching circuit. It compensates cable losses
between the antenna (for example windscreen, roof or
bumper antennas) and the car radio which is usually
placed far away from the antenna.
The FM amplifier provides excellent noise performance.
External components are used to adjust the gain and the
input-output matching impedance. Therefore it is
possible to adjust the amplifier to various cable
impedances (usually 50, 75 or 150 W). To protect the
amplifier against input overload an Automatic Gain
Control (AGC) is included on the chip. The AGC
observes the AC voltage at the FM amplifier output,
rectifies this signal, and delivers DC current to dampen
the input antenna signal via an external PIN diode. The
threshold for the AGC is adjustable. Simple and
temperature compensated biasing is possible due to the
integrated voltage reference VRef2.
The AM part consists of a buffer amplifier. The voltage
gain of this stage is approximately one. The input
resistance is 470 kW, the input capacitance less than
10 pF. The output resistance is 125 W. An excellent
dynamic range is achieved due to the complementary
CMOS source follower stage.
Absolute Maximum Ratings
Reference point is ground (Pins 2 and 7)
Parameters
Supply voltage
Power dissipation, Ptot at Tamb = 85°C
Junction temperature
Ambient temperature
Storage temperature
Electrostatic handling (HBM)
Symbol
VS
Ptot
Tj
Tamb
Tstg
VESD
Value
8.8
460
150
–40 to +85
–50 to +150
2000
Unit
V
mW
°C
°C
°C
V
Symbol
RthJA
Value
140
Unit
K/W
"
Thermal Resistance
Parameters
Junction ambient
TELEFUNKEN Semiconductors
Rev. A1, 08-Jul-97
5 (12)
U4254BM
Electrical Characteristics
See test circuit
VS = 8 V, Tamb = 25°C, unless otherwise specified
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Parameters
Supply voltage
Supply currents
Reference voltage 1 output
(I12 = 0)
Reference voltage 2 output
(I5 = 0)
Temperature dependence of
VREF2
AM amplifier
Input resistance
Input capacitance
Output resistance
Voltage gain
Output noise voltage
(rms value)
2nd harmonic
FM amplifier
Supply current limit
Input resistance
Output resistance
Power gain
Output noise voltage
3rd order output intercept
AGC
AGC input voltage threshold
AGC input voltage threshold
AGC output current
6 (12)
Test Conditions / Pins
Pin 14
Pin 14
Pin 12
Symbol
Vs
Is
VRef1
Min.
7.2
Typ.
8
4
5.5
Max.
8.8
Unit
V
mA
V
Pin 5
VRef2
2.6
V
Pin 5
VRef2/ T
–1
mV/K
Pin 8
Pin 8
Pin 10
Pin 10 / Pin 8
Pin 10
S1 switched to 2; B = 6 kHz
150 kHz to 300 kHz
500 kHz to 6.5 kHz
Pin 10
S2 switched to 1
fAMIN = 500 kHz,
Output voltage = 110 dBµV
RAMIN
CAMIN
ROUT
a
470
k
pF
VN1
VN2
–2
–6
–65
IAGC, IAGCADJ = 0 A, Pin 15
f = 100 MHz
Pin 1
f = 100 MHz
Pin 15
f = 100 MHz Pin 15/ Pin 1
Pin 15
f = 100 MHz, B = 120 kHz
f = 100 MHz
Pin 15
I15
RFMIN
RFMOUT
G
VN
33
50
50
5
0
f = 100 MHz
Pin 15
S2 switched to 1;
AGC threshold DC current is
10 µA at Pin 4
f = 100 MHz
Pin 15
S2 switched to 2;
AGC threshold DC current is
10 µA at Pin 4
AGC active
10
125
0.85
dBµV
dBµV
dBc
35
mA
dB
dBµV
132
dBµV
Vth1
96
dBµV
Vth2
106
dBµV
IAGC
1.2
mA
TELEFUNKEN Semiconductors
Rev. A1, 01-Jul-97
U4254BM
Test Circuit
VS
1
2.2 mH
FMOUT
2
S2
5 kW
2.2 nF
I15
I14
AMOUT
I13
2.2mF 100 nF
2.2 nF
100 nF
+
9
16
150 W
13934
U4254BM
1
8
I4
FMIN
2.2 mH
2.2 nF
22 W
S1
51 W
2.2 nF
2
1
15 pF
VS
1 nF
2.2 nF
AMIN
Figure 12.
TELEFUNKEN Semiconductors
Rev. A1, 08-Jul-97
7 (12)
U4254BM
FM Intermodulation Distortion
dBmV
dBmV
Output
108 dBmV
Input
103 dBmV
58 dBmV
Gain = 5 dB
AGC not active
90
95
100
105
Input
118 dBmV
dBmV
90
MHz
95
100
95
100
MHz
dBmV
Output
100 dBmV
50 dBmV
AGC active
90
105
105
MHz
90
95
100
105
MHz
12400
Figure 13.
8 (12)
TELEFUNKEN Semiconductors
Rev. A1, 01-Jul-97
U4254BM
Test Circuit for AM Large Signal Behavior
Analyzer
AMOUT1
100 nF
LPF
AMIN
DUT
5 kW
1 nF
fcutoff = 500 kHz
AMOUT
50 W
Rin = 50 W
100 nF
115 dBmV 75 dBmV
50 W
f = 500 kHz
V0
13935
Figure 14.
AM Harmonic Distortion
VAMOUT
(dBmV) 115 dBmV
110
90
70
55dBmV
50
0.5
1.0
45 dBmV
1.5
f (MHz)
13936
Figure 15.
TELEFUNKEN Semiconductors
Rev. A1, 08-Jul-97
9 (12)
10 (12)
PIN
V
200 nF
BA679
1 nF
2.2 nF
2.2 nF
1 kW
R2
2.2 nF 22 W
Vs
R 1 ( W)
150
270
390
470
620
FM cable impedance
50
75
100
125
150
R 1 and R2 depend on used FM cable impedance
Protection
circuit
BC558
510 W
2.2 nF
FM
ANTENNA
AM
160
86
51
33
22
R 2 ( W)
AMIN
VREF2
VS
AGC
FMGAIN
FMGND
FMIN
VRef
I AGC
FM
2.2 nF
AM
VREF1
AGCADJ
FMOUT
AMOUT
AMOUT1
AMGND
AGC
R1
+
1m F
100 nF
100 nF
2.2 m H
VS = 8.2 V
2.2 m H
39 pF
Output
U4254BM
Application Circuit
13937
Figure 16.
TELEFUNKEN Semiconductors
Rev. A1, 01-Jul-97
U4254BM
Package Information
Package SO16
Dimensions in mm
94 8875
TELEFUNKEN Semiconductors
Rev. A1, 08-Jul-97
11 (12)
U4254BM
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
12 (12)
TELEFUNKEN Semiconductors
Rev. A1, 01-Jul-97