TA31273FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA31273FN AM RF/IF Detector IC The TA31273FN is an RF/IF detector IC for AM radio. The IC incorporates an RF amp, 2-level comparator, and local x8 circuit. Features • RF frequency: 240 to 450 MHz • IF frequency: 10.7 MHz • Operating voltage range: 3.0 to 5.5 V • Current dissipation: 6.8 mA (typ.) • (Not operating local oscillator) Current dissipation at BS: 0 µA (typ.) • Small package: 20-pin SSOP (0.65-mm pitch) Weight: 0.09 g (typ.) Block Diagram SAW 20 19 FIL FIL OUT IN 18 17 RSSI BS 16 15 14 13 12 11 RF RF MIX GND1 RF MONI OUT DEC IN IN RSSI Comparator ×8 OSC VCC1 LOBS IN 1 2 3 MIX IF IF OUT VCC2 IN DEC REF GND2 DATA 4 5 6 7 8 9 10 1 2002-07-08 TA31273FN Pin Function (The Values Of Resistor And Capacitor In The Internal Equivalent Circuit Are Typical.) Internal Equivalent Circuit 1 OSC IN Local oscillator input pin. 2 VCC1 Power supply pin 1. 3 LOBS Lo switch pin. H: x8 circuit in operation Lo: Through pass 3 4 MIX OUT Mixer output pin. 4 5 VCC2 Power supply pin 2. 6 IF IN IF amp input pin. 7 IF DEC IF amp input pin. Used as a bias coupling pin. 5 kΩ 2 pF 5 kΩ 1 15 kΩ Function 5 kΩ Pin Name 15 kΩ Pin No. 60 kΩ 210 Ω 170 Ω 170 Ω 3 kΩ 6 7 500 Ω 8 20 8 REF 40 kΩ AM comparator REF pin. COMP 19 DATA 5.5 kΩ 9 GND2 GND pin 2. 10 DATA AM waveform shaping output pin. Open collector output. Connect a pull-up resistor. 40 kΩ 10 2 2 kΩ 2002-07-08 TA31273FN Pin No. Pin Name Function 11 RF IN RF signal input pin. 12 RF DEC Emitter pin for internal transistor. Internal Equivalent Circuit 14 3 kΩ 11 14 RF OUT RF amp output pin. 13 MONI Since this pin is connected to an internal circuit, it should either be left open or connected to GND. 15 GND1 GND pin 1. 16 MIX IN Mixer input pin. 17 BS Battery saving pin. 17 18 RSSI RSSI output pin. 18 19 FIL IN AM LPF input pin. 12 20 kΩ 13 50 kΩ 20 kΩ 2.4 kΩ 16 500 Ω 19 20 FIL OUT 5.5 kΩ 500 Ω 20 AM LPF output pin. Equivalent circuits are given to help understand design of the external circuits to be connected. They do not accurately represent the internal circuits. 3 2002-07-08 TA31273FN Functions 1. Waveform shaper circuit (comparator) The output data (pin 10) are inverted. 2. RSSI function DC potential corresponding to the input level of IF IN (pin 6) is output to RSSI (pin 18). Output to RSSI (pin 18) is converted to a voltage by the internal resistance. Thus, connecting external resistance R to pin 18 varies the gradient of the RSSI output as shown below. Note that due to the displacement of temperature coefficients between external resistor R and the internal IC resistor, the temperature characteristic of the RSSI output may change. Also, the maximum RSSI value should be VCC − 1 V. After R is connected R 20 kΩ 18 IF input level Figure 2 Figure 1 3. VCC pin and GND pin Use the same voltage supply source for VCC1 (pin 2) and VCC2 (pin 5) (or connect them). Also, use the same voltage supply source for GND1 (pin 15) and GND2 (pin 9) (or connect them). 4. Local oscillator circuit The local oscillator circuit is external-input-only. Input to pin 1 at a level from 95 to 105dBµV. By switching the Lo switch (LOBS), the frequency set by the external circuit can be used as-is without using the x8 circuit. Lo Switch (LOBS) H L Local oscillation status x8 circuit in operation x8 circuit halted/through pass 5. RF amp current adjustment R The RF amp current dissipation can be regulated by varying resistor R as shown in the figure below. When R = 1 kΩ, the current dissipation is approximately 800 µA. 12 RF DEC Figure 3 4 2002-07-08 TA31273FN 6. Battery-saving (BS) function and Lo switch LOBS function The IC incorporates a battery-saving function and a Lo switch function. These functions offer the following selection. BS Pin/LOBS Pin IC Current Dissipation (at no signal) Circuit Status in the IC Circuits in operation • • • • • • • H/H x8 circuit Mixer RF amp Comparator IF amp RSSI Comparator capacitor charger circuit 6.8 mA (typ.) H/L x8 circuit only halted, Frequency set by external circuit can be used as-is. 3.8 mA (typ.) L/H x8 circuit only in operation 3.0 mA (typ.) L/L All circuits halted 0 mA (typ.) 7. RF amp gain 1 RF amp gain 1 (GV (RF) 1) is a reference value calculated as follows. Measure GRF in the following figure. 6 pF 1 kΩ 27 nH 0.01 µF 1000 pF 6 pF 16 14 4 6 11 33 nH SAW SG 50dBµV GRF Figure 4 GV (RF) 1 is calculated as follows: GV (RF) 1 = GRF − GV (MIX) 8. IF amp gain The intended value is 70dB. 9. Waveform-shaping output duty cycle The specified range of electrical characteristics is only available for single-tone. 10. Local frequency range (after multiplying frequency by 8) When the multiplier circuit is used, the local frequency will be in the range 250.7 MHz to 439.3 MHz. 5 2002-07-08 TA31273FN 11. Bit rate filter for AM The current AM bit rate filter is used as a quadratic filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant. Quadratic filter (NRZ) (The bit rate filter time constant takes into account the internal resistance RSSI (20 kΩ).) R9 R8 C14 C13 1200 bps 47 kΩ 68 kΩ 1500 pF 4700 pF 2400 bps 47 kΩ 68 kΩ 680 pF 2200 pF 4800 bps 47 kΩ 68 kΩ 390 pF 1000 pF When the filter constants shown below are used, it is not necessary to set the R9 constant value. R9 R8 C14 C13 1200 bps 20 kΩ 2200 pF 6800 pF 2400 bps 20 kΩ 1500 pF 3300 pF 4800 bps 20 kΩ 820 pF 1800 pF In addition, the current AM bit rate filter can be used as a tertiary filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant. Quadratic filter (NRZ) (The bit rate filter time constant takes into account the internal resistance RSSI (20 kΩ).) R10 R9 R8 C16 C14 C13 1200 bps 47 kΩ 68 kΩ 68 kΩ 3300 pF 560 pF 0.01 µF 2400 bps 47 kΩ 68 kΩ 68 kΩ 1500 pF 270 pF 4700 pF 4800 bps 47 kΩ 68 kΩ 68 kΩ 680 pF 150 pF 2200 pF When the filter constants shown below are used, it is not necessary to set the R10 constant value. R10 R9 R8 C16 C14 C13 1200 bps 20 kΩ 20 kΩ 8200 pF 2200 pF 0.033 µF 2400 bps 20 kΩ 20 kΩ 3900 pF 1000 pF 0.015 µF 4800 bps 20 kΩ 20 kΩ 1800 pF 470 pF 6800 pF 6 2002-07-08 TA31273FN Maximum Ratings (Unless Otherwise Specfied Ta = 25°C, Voltage Value is Determined by GND (TYP)) Characteristics Supply voltage Symbol Rating VCC 6 Unit V Current dissipation PD 710 mW Operating temperature range Topr −40~85 °C Storage temperature range Tstg −55~150 °C The maximum ratings must not be exceeded at any time. Do not operate the device under conditions outside the above ratings. Operating available Range (Unless Otherwise Specified Ta = 25℃, Voltage Value is Determined by GND(typ.)) Characteristics Operating voltage range Symbol Test Circuit Test Condition Min Typ. Max Unit VCC 3.0 5.0 5.5 V Operating ranges indicate the conditions for which the device is intended to be functional even with the electrical changes. Electrical Characteristics (Unless Otherwise Specified : Ta = 25°C, VCC = 5.0V , Rfin = 314.9 MHz, AM = 90%,Ifin = 10.7MHz , af = 600 Hz (square wave)) Symbol Test Circuit Test Condition Min Typ. Max Unit Current dissipation at no signal Iccq 2 VCC = 5.0 V, BS/LOBS =“H/H” Fin (LO) = 40.7 MHz 5.1 6.8 8.5 mA Current dissipation at battery saving Icco 3 0 5 µA RF amp gain 1 GV (RF) 1 Vin (RF) = 50dBµV 20 dB RF amp gain 2 GV (RF) 2 1 (5) 50 Ω input/output −6.5 −3.5 −0.5 dB RF amp input resistance R (RF) IN 900 Ω Characteristics C (RF) IN 2.5 pF C (RF) OUT 2 pF Mixer conversion gain GV (MIX) 1 (6) 17.5 21.5 25.5 dB Mixer input resistance R (MIX) IN 1.5 kΩ Mixer input capacitance C (MIX) IN 2.5 dB Mixer output resistance R (MIX) OUT 330 Mixer intercept point IP3 93 dBµV IF operating frequency fIF 10.7 MHz IF amp input resistance R (IF) IN 330 Ω RSSI output voltage 1 VRSSI1 1 (1) Vin (IF) = 35dBµVEMF 0.1 0.3 0.5 V RSSI output voltage 2 VRSSI2 1 (1) Vin (IF) = 65dBµVEMF 0.95 1.20 1.45 V RSSI output voltage 3 VRSSI3 1 (1) Vin (IF) = 100dBµVEMF 1.9 2.3 2.7 V RSSI output resistance RRSSI 15 20 25 kΩ DR 1 (2) Vin (IF) = 80dBµVEMF for single-tone 45 50 55 % Data output voltage (L level) VDATAL 1 (3) IDATAL = 1 mA 0.4 V Data output leakage current (H level) IDATAH 1 (4) 2 µA BS pin H-level input voltage 2.7 5.5 V BS pin L-level input voltage 0 0.2 V LOBS pin H-level input voltage 2.7 5.5 V LOBS pin L-level input voltage 0 0.2 V RF amp input capacitance RF amp output capacitance Waveform shaping output duty cycle 7 2002-07-08 TA31273FN Test Circuit 1000 pF C24 C25 1 kΩ R14 0.01 µF 1000 pF 6 pF C20 18 17 RSSI BS C23 R13 1 kΩ 1000 pF L4 3300 pF 47 kΩ 20 19 FIL FIL OUT IN VCC 27nH R9 68 kΩ C16 R10 R8 68 kΩ C14 560 pF C13 0.01 µF VCC 16 15 14 13 12 11 MIX GND1 RF MONI RF RF OUT IN DEC IN RSSI COMP VCC REF GND2 DATA 8 9 10 R15 0.22 µF 0.01 µF C22 C17 C21 MIX IF IF OUT VCC2 IN DEC 4 5 6 7 0.01 µF 0.01 µF C15 OSC VCC1 LOBS IN 1 2 3 100 kΩ ×8 VCC DATA VCC BPF VCC 0.01 µF Test Circuit 1 (1) VRSSI (2) DR 0.01 µF 0.01 µF 6 SG 10 62 Ω 1000 pF 62 Ω SG 18 100 kΩ 6 V VCC (3) VDATA L (4) IDATA H V 2.5 V V 2.5 V R = 4.7 kΩ 8 10 VCC V 8 10 VCC 100 kΩ I = V/100 × 10 V 3.0 V V 3 3.0 V 19 V 8 19 2002-07-08 TA31273FN (5) Gv (RF) 2 (6) GV (MIX) 4 1000 pF 16 6 0.01 µF 51 Ω SG 1 51 Ω SG 51 Ω 14 51 Ω 11 SG 0.01 µF 1000 pF 1000 pF Test Circuit 2 1 kΩ 51 kΩ Iccqam 15 5 SG 0.01 µF 12 9 17 1 2 14 A Test Circuit 3 1 kΩ Icco 9 15 2 5 17 12 14 A VCC 9 2002-07-08 TA31273FN Reference data（This is temperature characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics. ） Current consumption vs. Power supply voltage characteristics Current consumption vs. Power supply voltage characteristics 10 8 Current consumtion Iccq (mA) Current consumtion Iccq (mA) All internal circuits used 8 6 100°C 25°C −40°C 4 Fin (Lo) = 40.7 MHz 2 Vin (Lo) = 100 dBµV BH: H 0 0 1 2 3 Multiplier circuit turned off and external circuit used 4 Only multiplier circuit used 2 Fin (Lo) = 40.7 MHz BS Vin (Lo) = 100 dBµV LOBS: H 4 Power supply voltage 6 5 Ta = 25°C 0 0 6 1 VCC (V) 2 3 4 Power supply voltage RF amp gain vs. Power supply voltage characteristics 5 6 VCC (V) RSSI output voltage characteristics (MIX input) 0 3 (V) VRSSI −10 −20 RSSI output voltage RF amp gain 2 Gv (RF) 2 (dB) 110°C 100°C −30 25°C −40 −40°C Fin (RF) = 314.9 MHz 2.5 2 25°C 1 2 3 4 Power supply voltage 5 6 VCC (V) 40 60 80 100 120 Gv (Mix) (dB) 30 110°C Mixer conversion gain Gv (Mix) (dB) Mixer conversion gain 20 Mixer conversion gain vs. Power supply voltage characteristics 20 0 25°C Fin (MIX) = 314.9 MHz −40°C Vin (MIX) = 50 dBµV Fin (Lo) = 40.7 MHz −20 Vin (Lo) = 100 dBµV LOBS: H −30 1 0 MIX IN input level Vin (dBµVEMF) 30 −10 Fin (Lo) = 40.7 MHz Vin (Lo) = 100 dBµV 0 −20 Mixer conversion gain vs. Power supply voltage characteristics 10 Fin (MIX) = 314.9 MHz 0.5 Vin (RF) = 50 dBµV −50 1 −40°C 1.5 2 3 Power supply voltage 4 5 20 10 −40°C 0 25°C −10 VCC (V) Fin (MIX) = 314.9 MHz Vin (MIX) = 50 dBµV −20 Fin (Lo) = 304.2 MHz Vin (Lo) = 100 dBµV −30 LOBS: L −40 1 6 110°C 2 3 Power supply voltage 10 4 5 6 VCC (V) 2002-07-08 TA31273FN Mixer conversion gain vs. Local input level characteristics S/N characteristics (IF input) 10 20 0 110°C 25°C (dB) 25°C 10 −40°C 5 0 110°C −3 Fin (IF) = 10.7 MHz AM = 90% Fmod = 600 Hz −5 110°C −5 −40°C −7 Fin (MIX) = 314.9 MHz Vin (MIX) = 50 dBµV −10 Fin (Lo) = 40.7 MHz −15 60 70 80 90 Local input level 100 VLO 110 25°C −9 −10 120 (dBµV) 10 30 50 IF IN input FSK duty cycle vs. Power supply voltage characteristics 70 Vin (IF) 90 110 130 (dBµVEMF) RSSI output voltage characteristics (IF input) 3.0 (V) 60.0 VRSSI 55.0 RSSI output voltage FSK duty cycle DR (%) −40°C 15 S + N, N Mixer conversion gain Gv (Mix) (dB) 25 50.0 −40°C 25°C 45.0 Fin (IF) = 10.7 MHz Vin (IF) = 50 dBµVEMF AM = 90% Fmod = 600 Hz 110°C 40.0 1.00 2.00 3.00 4.00 Power supply voltage 5.00 110°C 2.5 2.0 −40°C 25°C 1.5 1.0 0.5 Fin (IF) = 10.7 MHz 40.0 0 6.00 VCC (V) 20 40 IF IN input level 60 Vin 80 100 120 (dBµVEMF) Mixer conversion gain frequency characteristics Mixer conversion gain Gv (MIX) (dB) 25 20 −40°C 15 25°C 10 VCC = 5 V Vin (MIX) = 50 dBµV Vin (Lo) = 100 dBµV 5 LOBS = “L” 110°C * Terminate the IF input impedance. 0 100 1000 Input frequency Fin (MIX) (MHz) 11 2002-07-08 TA31273FN Application Circuit 18 17 RSSI BS 33 nH SAW RF IN 1000 pF C24 C25 1 kΩ R14 1000 pF 0.01 µF C23 6 pF C20 L4 1000 pF 6 pF 27nH 3300 pF 47 kΩ 20 19 FIL FIL OUT IN VCC R13 1 kΩ R9 68 kΩ C16 R10 R8 68 kΩ C14 560 pF C13 0.01 µF VCC 16 15 14 13 12 11 MIX GND1 RF MONI RF RF OUT IN DEC IN RSSI Comparator VCC 100 kΩ R15 0.22 µF 0.01 µF C22 C21 C17 0.01 µF VCC C9 C7 56 pF 3.3 kΩ 1 pF MIX IF IF OUT VCC2 IN DEC REF GND2 DATA 4 5 6 7 8 9 10 0.01 µF OSC VCC1 LOBS IN 1 2 3 C15 0.01 µF C8 47 pF R4 R3 C2 33 kΩ C3 X1 R2 120 kΩ 40.7 MHz 10 µF ×8 VCC DATA VCC BPF X1 ：TR-1（Tokyo Denpa Co., Ltd.） BPF：SFE10.7MA5-A（Murata Manufacturing Co., Ltd.） SAW：SAFCH315MSM0T00B0S（Murata Manufacturing Co., Ltd.） 12 2002-07-08 TA31273FN Package Dimensions Weight: 0.09 g (typ.) 13 2002-07-08 TA31273FN RESTRICTIONS ON PRODUCT USE 000707EBA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 14 2002-07-08