TLP141G TENTATIVE TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP141G Programmable Controllers AC−Output Module Solid State Relay Unit in mm The TOSHIBA mini flat coupler TLP141G is a small outline coupler, suitable for surface mount assembly. The TLP141G consists of a photo thyristor, optically coupled to a gallium arsenide infrared emitting diode. · Peak off−state voltage: 400 V (min.) · Trigger LED current: 10 mA (max.) · On-state current: 150 mA (max.) · Isolation voltage: 2500 Vrms (min.) · UL recognized: UL1577, file no. E67349 TOSHIBA 11−4C2 Weight: 0.09 g Pin Connections 6 1 5 4 3 1 : Anode 3 : Cathode 4 : Cathode 5 : Anode. 6 : Gate 1 2002-09-25 TLP141G Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ∆IF/°C -0.7 mA / °C Peak forward current (100 µs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Peak forward voltage(RGK = 27kΩ) VDRM 400 V Peak reverse voltage(RGK = 27kΩ) VDRM 400 V On-state current IT(RMS) 150 mA On-state current derating (Ta ≥ 25°C) ∆IT / °C -2.0 mA / °C Peak one cycle surge current ITSM 2 A Peak reverse gate voltage VGM 5 V Tj 100 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 2500 Vrms Forward current Detector LED Forward current derating (Ta ≥ 53°C) Junction temperature Isolation voltage (AC, 1 min., RH ≤ 60%) (Note 1) (Note 1) Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 120 Vac Forward current IF 15 20 25 mA Operating temperature Topr -25 ― 85 °C Gate to cathode resistance RGK ― 27 33 kΩ Gate to cathode capacitance CGK ― 0.01 0.1 µF 2 2002-09-25 TLP141G Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 µA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Off-state current IDRM VAK = 400 V RGK = 27 kΩ Ta = 25°C ― 10 5000 nA Ta = 100°C ― 1 100 µA Reverse current IRRM VKA = 70 mA RGK = 27 kΩ Ta = 25°C ― 10 5000 nA Ta = 100°C ― 1 100 µA On-state voltage VTM ITM = 100 mA ― 0.9 1.3 V Holding current IH RGK = 27 kΩ ― 0.2 1 mA Off-state dv / dt dv/dt VAK = 280 V, RGK = 27 kΩ 5 10 ― V / µs Anode to gate ― 20 ― Gate to cathode ― 350 ― Min. Typ. Max. Unit Capacitance Cj V = 0, f = 1 MHz pF Coupled Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Trigger LED current IFT VAK = 6 V, RGK = 27kΩ ― 4 10 mA Turn-on time ton IF = 50mA, RGK = 27kΩ ― 10 ― µs VS = 500 V, RGK = 27kΩ 500 ― ― V / µs ― 0.8 ― pF 10 ― Ω 2500 ― ― AC, 1 second, in oil ― 5000 ― DC, 1 minute, in oil ― 5000 ― Coupled dv / dt Capacitance (input to output) Isolation resistance dv/dt CS RS VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS 3 10 5×10 14 Vrms Vdc 2002-09-25 TLP141G IT(RMS) – Ta 250 80 200 R.m.s. on-state current IT(RMS) (mA) Allowable forward current IF (mA) I F – Ta 100 60 40 20 0 －20 150 100 50 0 40 20 80 60 100 0 －20 120 20 0 40 80 60 Ambient temperature Ta IFP – DR 3000 100 120 (°C) IF – VF 100 Pulse width ≤ 100 µs Ta = 25°C IF (mA) 1000 Forward current Allowable pulsed forward current IFP (mA) Ta = 25°C 100 30 10 10－3 10－2 3 10－1 3 3 30 10 3 1 0.3 0.1 0.6 100 0.8 Duty cycle ratio DR 1.2 Forward voltage - IF 1.4 VF 1.6 1.8 (V) IFP – VFP 1000 －3.2 Pulse forward current IFP (mA) Forward voltage temperature coeffecient ∆VF/ r∆Ta (mV/°C)C (mA) ∆VF/∆Ta 1.0 －2.8 －2.4 －2.0 －1.6 －1.2 －0.8 300 100 30 10 Pulse width ≤ 10 µs Pepetitive frequency 3 = 100 Hz Ta = 25°C －0.4 0.1 0.3 0.5 1 3 5 Forward current IF 10 1 0.6 30 50 (mA) 1.0 1.4 1.8 2.2 2.6 3.0 Pulse forward voltage VFP (V) 4 2002-09-25 TLP141G ton – IF 30 dv / dt – RGK Ta = 25°C 200 Critical rate of rise of Off-state voltage dv / dt (V / μs) VAA=50V 20 Turn-on time ton (μs) RL=100Ω RGK=10kΩ 10 27kΩ 1 0 20 10 40 30 Forward current Ta = 25°C 100 VAK=200V 50 400V 30 10 IF(mA) IFT – Ta 3 1 20 5 10 30 Gate-cathode resistance RGK VAＫ=6V 50 100 (kΩ) 10 RGK=10kΩ IFT – RGK 100 27kΩ 5 3 0 20 40 60 80 Ambient temperature Ta 100 (°C) IH – Ta 0.7 0.5 Trigger LED current IFT (mA) Trigger LED current IFT (mA) RL=100Ω Ta = 25°C VAK=6V RL=100Ω 50 30 10 5 Holding current IH (mA) RGK=10kΩ 2 1 0.3 27kΩ 3 5 10 30 50 100 200 Gate-cathode resistance RGK (kΩ) 0.1 0 20 40 60 Ambient temperature 80 100 IH – RGK Ta (°C) 5 dv / dt – CGK (mA) Ta = 85°C VAK = 400V 300 R GK= 27kΩ Holding current IH 500 Critical rate of rise of off-state voltage dv / dt (V/μs) Ta = 25°C 3 100 50 30 1 0.5 0.3 10 5 0.001 0.003 0.005 0.1 1 0.01 3 5 10 30 50 100 200 Gate-cathode resistance RGK (kΩ) Gate-cathode capacitance CGK(μF) 5 2002-09-25 TLP141G RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-09-25