CBR1-D020S SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. NOTE: Also available in Fast Recovery, please contact factory for details. MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reve Average Forward Current (TA=50°C) Peak Forward Surge Current Rating for Fusing (t<8.35ms) Operating and Storage Junction Temperature CBR1D020S CBR1D040S CBR1D060S VRRM VR 200 400 600 800 1000 V 200 400 600 800 1000 V VR(RMS) IO 140 280 420 560 700 SYMBOL VF CJ UNITS V A IFSM I2t 50 A 10 A2s TJ, Tstg -65 to +150 °C VR=Rated VRRM VR=Rated VRRM, TA=125°C IF=1.0A VR=4.0V, f=1.0MHz CBR1D100S 1.0 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR IR CBR1D080S MAX 10 µA 0.5 mA 1.1 25 UNITS V pF R3 (4-January 2010) CBR1-D020S SERIES SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER SMDIP CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m