CBRHDSH2-100 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH2-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips. MARKING CODE: CSH10 FEATURES: HD DIP CASE • Device is Halogen Free by design • Low Leakage Current (700nA TYP @ VRRM) • High 2.0A Current Rating • Low VF Schottky Diodes (840mV MAX @ IF=2.0A) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TA=75°C) Peak Forward Surge Current (8.3ms) SYMBOL UNITS VRRM VR 100 V 100 V VR(RMS) IO 70 V 2.0 A 50 A Operating Junction Temperature IFSM TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS IR VF VR=100V IF=500mA 0.70 4.0 µA 610 mV VF VF IF=1.0A IF=2.0A 700 mV CJ VR=4.0V, f=1.0MHz 770 840 mV 250 pF R3 (4-January 2010) CBRHDSH2-100 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH10 R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m CBRHDSH2-100 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER TYPICAL ELECTRICAL CHARACTERISTICS R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m