CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-4E is an Enhanced version of the CMDSH-3 Silicon Schottky Diode in an SOD-323 Surface Mount Package. ENHANCED SPECIFICATIONS: ♦ IO from 100mA max to 200mA max. ♦ ♦ SOD-323 CASE MAXIMUM RATINGS: (TA=25°C) ♦Peak Repetitive Reverse Voltage ♦Average Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance BVR from 30V min to 40V min. VF from 1.0V max to 0.8V max. MARKING CODE: S1E SYMBOL UNITS VRRM IO 40 V 200 mA IFRM IFSM 350 mA 750 mA PD TJ, Tstg 250 mW -65 to +150 °C ΘJA 500 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR VR=25V IR VR=25V, TA=100°C IR=100μA ♦BVR VF ♦VF ♦VF ♦♦VF CT trr ♦ ♦♦ 40 TYP MAX UNITS 90 500 nA 25 100 μA 50 V IF=2.0mA 0.29 0.33 V IF=15mA 0.37 0.42 V IF=100mA 0.61 0.80 V IF=200mA 0.65 1.0 VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100Ω 7.0 V pF 5.0 ns Enhanced specification. Additional Enhanced specification. R2 (8-January 2010) CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE MARKING CODE: S1E R2 (8-January 2010) w w w. c e n t r a l s e m i . c o m