Central CMDSH-4E TM Semiconductor Corp. ENHANCED SPECIFICATION SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-4E is an Enhanced version of the CMDSH-3 Silicon Schottky Diode in an SOD-323 Surface Mount Package. ENHANCED SPECIFICATIONS: ♦ IO from 100 mA max to 200 mA max. ♦ ♦ SOD-323 CASE BVR from 30V min to 40 V min. VF from 1.0 V max to 0.8 V max. MARKING CODE: S1E MAXIMUM RATINGS: (TA=25°C) SYMBOL VRRM ♦Peak Repetitive Reverse Voltage ♦Average Forward Current 40 UNITS V IO IFRM 200 mA Peak Repetitive Forward Voltage 350 mA Forward Surge Current, tp=10ms IFSM 750 mA PD 250 mW TJ, Tstg -65 to +150 °C ΘJA 500 °C/W Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: SYMBOL ♦BVR VF ♦VF ♦VF ♦♦VF ♦ ♦♦ TEST CONDITIONS (TA=25°C unless otherwise noted) MIN µA IR=100µ IF=2.0mA IF=15mA IF=100mA IF=200mA IR IR CT VR=25V VR=25V, TA=100°C VR=1.0V, f=1 MHz trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 40 TYP MAX UNITS 50 0.29 0.33 V V 0.37 0.42 V 0.61 0.80 V 0.65 1.0 V 90 500 nA 25 7.0 100 µA pF 5.0 ns Enhanced specification. Additional Enhanced specification. R0 (10-May 2004) Central TM Semiconductor Corp. CMDSH-4E ENHANCED SPECIFICATION SCHOTTKY DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: S1E R0 (10-May 2004)