CENTRAL CMLD6001_10

CMLD6001
SURFACE MOUNT
DUAL, ISOLATED
LOW LEAKAGE SILICON
SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD6001 type
contains Two (2) Isolated Silicon Switching Diodes,
manufactured by the epitaxial planar process, epoxy
molded in a PICOmini™ surface mount package.
These devices are designed for switching applications
requiring extremely low leakage.
MARKING CODE: C6D
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
SYMBOL
VR
75
Peak Repetitive Reverse Voltage
VRRM
IF
100
V
250
mA
IFSM
IFSM
4.0
A
1.0
A
250
mW
Continuous Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
PD
TJ, Tstg
ΘJA
UNITS
V
-65 to +150
°C
500
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
500
UNITS
IR
VR=75V
BVR
IR=100μA
VF
IF=1.0mA
0.85
V
VF
IF=10mA
0.95
V
VF
IF=100mA
1.1
V
CT
VR=0, f=1.0MHz
2.0
pF
trr
IR=IF=10mA, RL=100Ω Rec. to 1.0mA
3.0
μs
100
pA
V
R2 (18-January 2010)
CMLD6001
SURFACE MOUNT
DUAL, ISOLATED
LOW LEAKAGE SILICON
SWITCHING DIODES
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) NC
3) Anode D2
4) Cathode D2
5) NC
6) Cathode D1
MARKING CODE: C6D
R2 (18-January 2010)
w w w. c e n t r a l s e m i . c o m