CMLD6001DO SURFACE MOUNT SILICON DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains two (2) isolated opposing configuration, silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in an SOT-563 surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C60 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL VR Peak Repetitive Reverse Voltage Continuous Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 75 UNITS V VRRM IF 100 V 250 mA IFSM IFSM 4.0 A 1.0 A PD TJ, Tstg 250 mW -65 to +150 °C ΘJA 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=75V 500 100 UNITS pA BVR IR=100μA VF IF=1.0mA 0.85 V V VF IF=10mA 0.95 V VF IF=100mA 1.1 V CJ VR=0, f=1.0MHz 2.0 pF trr IR=IF=10mA, Irr=1.0mA, RL=100Ω 3.0 μs R5 (15-June 2015) CMLD6001DO SURFACE MOUNT SILICON DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SWITCHING DIODE SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 MARKING CODE: C60 R5 (15-June 2015) w w w. c e n t r a l s e m i . c o m