CMLM0205 Multi Discrete Module ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Combination: N-Channel MOSFET and Low VF Schottky Diode. MARKING CODE: C25 MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL PD TJ, Tstg ΘJA 350 -65 to +150 357 UNITS mW °C °C/W MAXIMUM RATINGS - Q1: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current SYMBOL VDS VDG VGS ID IS IDM ISM 60 60 40 280 280 1.5 1.5 UNITS V V V mA mA A A MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp≤1.0ms Peak Forward Surge Current, tp = 8.0ms SYMBOL VRRM IF IFRM IFSM 40 500 3.5 10 UNITS V mA A A ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS VDS=60V, VGS=0 1.0 IDSS VDS=60V, VGS=0, TJ=125°C 500 ID(ON) VGS=10V, VDS=10V 500 BVDSS VGS=0, ID=10μA 60 VGS(th) VDS=VGS, ID=250μA 1.0 2.5 VDS(ON) VGS=10V, ID=500mA 1.0 VDS(ON) VGS=5.0V, ID=50mA 0.15 VSD VGS=0, IS=400mA 1.2 rDS(ON) VGS=10V, ID=500mA 2.0 rDS(ON) VGS=10V, ID=500mA, TJ=125°C 3.5 UNITS nA μA μA mA V V V V V Ω Ω R1 (18-January 2010) CMLM0205 Multi Discrete Module ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL rDS(ON) rDS(ON) gFS Crss Ciss Coss ton / toff TEST CONDITIONS VGS=5.0V, ID=50mA VGS=5.0V, ID=50mA, TJ=125°C VDS=10V, ID=200mA VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDD=30V, VGS=10V, ID=200mA RG=25Ω, RL=150Ω ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) IR VR=10V IR VR=30V BVR IR=500μA VF IF=100μA VF IF=1.0mA VF IF=10mA VF IF=100mA VF IF=500mA CT VR=1.0V, f=1.0MHz MIN MAX 3.0 5.0 5.0 50 25 UNITS Ω Ω mS pF pF pF 20 ns 20 100 μA μA V V V V V V pF 80 40 0.13 0.21 0.27 0.35 0.47 50 SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODE: C25 R1 (18-January 2010) w w w. c e n t r a l s e m i . c o m