CTLM7110-M832D MULTI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM7110M832D consists of an N-Channel Enhancement-mode MOSFET and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. MARKING CODE: CFL TLM832D CASE • Device is Halogen Free by design APPLICATIONS • • • • Load Power Switches DC - DC Converters LCD Backlighting Battery powered portable devices including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. FEATURES • Dual Chip Device • High Current (1.0A) MOSFET and Schottky Rectifier • Low rDS(ON): 0.25Ω MAX @ VGS=1.5V • Low VF Schottky Rectifier (550mV @ 1.0A MAX) • ESD Protection up to 2KV • Small TLM 3x2mm Leadless Surface Mount Package • Complementary Device: CTLM8110-M832D MAXIMUM RATINGS - CASE: (TA=25°C) SYMBOL Power Dissipation (Note 1) PD 1.65 Operating and Storage Junction Temperature TJ, Tstg -65 to +150 Thermal Resistance ΘJA 76 MAXIMUM RATINGS - Q1: (TA=25°C) Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 8.0 Continuous Drain Current (Steady State) ID 1.0 Maximum Pulsed Drain Current, tp=10μs IDM 4.0 MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage VRRM 40 Continuous Forward Current IF 1.0 Peak Repetitive Forward Current, tp<1.0ms IFRM 3.5 Peak Forward Surge Current, tp=8.0ms IFSM 10 ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=8.0V, VDS=0 10 IDSS VDS=20V, VGS=0 10 BVDSS VGS=0, ID=250μA 20 VGS(th) VDS=10V, ID=1.0mA 0.5 1.2 VSD VGS=0, IS=1.0A 1.1 rDS(ON) VGS=4.5V, ID=0.5A 0.075 0.10 rDS(ON) VGS=2.5V, ID=0.5A 0.10 0.14 rDS(ON) VGS=1.5V, ID=0.1A 0.17 0.25 Qg(tot) VDS=10V, VGS=4.5V, ID=1.0A 2.4 Qgs VDS=10V, VGS=4.5V, ID=1.0A 0.25 Qgd VDS=10V, VGS=4.5V, ID=1.0A 0.65 gFS VDS=10V, ID=0.5A 4.2 Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2. UNITS W °C °C/W V V A A V A A A UNITS μA μA V V V Ω Ω Ω nC nC nC S R2 (2-August 2011) CTLM7110-M832D MULTI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS - Q1 - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN Crss VDS=10V, VGS=0, f=1.0MHz Ciss VDS=10V, VGS=0, f=1.0MHz Coss VDS=10V, VGS=0, f=1.0MHz ton VDD=10V, VGS=5.0V, ID=0.5A toff VDD=10V, VGS=5.0V, ID=0.5A ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) SYMBOL TEST CONDITIONS MIN IR VR=5.0V IR VR=8.0V IR VR=15V BVR IR=100μA 40 VF IF=10mA VF IF=100mA VF IF=500mA VF IF=1.0A CJ VR=4.0V, f=1.0MHz TYP 45 220 120 25 140 MAX UNITS pF pF pF ns ns TYP MAX 10 20 50 UNITS μA μA μA V V V V V pF 0.29 0.36 0.45 0.55 50 TLM832D CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS For Maximum Power Dissipation (Dimensions in mm) For standard mounting refer to TLM832D Package Details PIN CONFIGURATION LEAD CODE: 1) Gate Q1 2) Source Q1 3) Anode D1 4) Anode D1 * Note: - Exposed pad P1 common to pins 7 and 8 - Exposed pad P2 common to pins 5 and 6 5) 6) 7) 8) Cathode D1 Cathode D1 Drain Q1 Drain Q1 MARKING CODE: CFL R2 (2-August 2011) w w w. c e n t r a l s e m i . c o m