CMPT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: 1FHC SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V A mW °C °C/W 180 160 6.0 1.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=120V ICBO VCB=120V, TA=100°C IEBO VEB=4.0V BVCBO IC=100µA 180 BVCEO IC=1.0mA 160 BVEBO IE=10µA 6.0 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA hFE VCE=5.0V, IC=1.0mA 80 hFE VCE=5.0V, IC=10mA 80 hFE VCE=5.0V, IC=50mA 30 hFE VCE=10V, IC=1.0A 10 fT VCE=10V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz MAX 50 50 50 0.15 0.20 1.00 1.00 UNITS nA µA nA V V V V V V V 250 15 MHz pF R1 (1-February 2010) CMPT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 1FHC R1 (1-February 2010) w w w. c e n t r a l s e m i . c o m