CMPT5401 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: C2L SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL 160 150 V VEBO IC 5.0 V V 600 mA 350 mW PD TJ, Tstg -65 to +150 °C ΘJA 357 °C/W MAX 50 UNITS nA 50 50 μA nA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=120V ICBO VCB=120V, TA=100°C IEBO VEB=3.0V BVCBO UNITS VCBO VCEO IC=100μA IC=1.0mA 160 V BVCEO 150 V BVEBO IE=10μA 5.0 V VCE(SAT) VCE(SAT) IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 0.2 V 0.5 V VBE(SAT) IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 1.0 V 1.0 V VBE(SAT) hFE hFE VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA 50 100 300 MHz Cob VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 6.0 pF hfe VCE=10V, IC=1.0mA, f=1.0kHz 40 200 NF VCE=5.0V, IC=250μA, RS=1.0kΩ, f=10Hz to 15.7kHz hFE fT 60 240 50 8.0 dB R6 (1-February 2010) CMPT5401 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C2L R6 (1-February 2010) w w w. c e n t r a l s e m i . c o m