CENTRAL CTLDM7003-M621

CTLDM7003-M621
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM7003-M621
is a Silicon N-Channel Enhancement-mode MOSFET in
a small, thermally efficient, TLM™ 2x1mm package.
MARKING CODE: CS
TLM621 CASE
FEATURES:
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
•
•
•
•
•
•
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
TJ, Tstg
ΘJA
• Device is Halogen Free by design
ESD Protection up to 2kV
Low rDS(ON)
Low Threshold Voltage
Fast Switching
Logic Level Compatible
Small TLMTM 2x1mm Package
50
50
12
280
1.5
0.9
-65 to +150
139
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=5.0V
IGSSF, IGSSR VGS=10V
IGSSF, IGSSR VGS=12V
IDSS
VDS=50V, VGS=0
BVDSS
VGS=0, ID=10μA
50
VGS(th)
VDS=VGS, ID=250μA
0.49
VSD
VGS=0, IS=115mA
rDS(ON)
VGS=1.8V, ID=50mA
1.6
rDS(ON)
VGS=2.5V, ID=50mA
1.3
rDS(ON)
VGS=5.0V, ID=50mA
1.1
gFS
VDS=10V, ID=200mA
200
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
MAX
100
2.0
2.0
50
1.0
1.4
3.0
2.5
2.0
5.0
50
25
UNITS
V
V
V
mA
A
W
°C
°C/W
UNITS
nA
μA
μA
nA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2.
R1 (17-February 2010)
CTLDM7003-M621
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TLM621 CASE - MECHANICAL OUTLINE
SUGGESTED MOUNTING PADS
(Dimensions in mm)
R0
*Exposed pad P connects pins 1, 2, 5, and 6.
PIN CONFIGURATION
LEAD CODE:
1) Drain
2) Drain
3) Gate
4) Source
5) Drain
6) Drain
MARKING CODE: CS
R1 (17-February 2010)
w w w. c e n t r a l s e m i . c o m