CMNDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM7001 is an Enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: AC SOT-953 CASE • Device is Halogen Free by design APPLICATIONS: FEATURES: • Low 0.5mm Package Profile • Low rDS(ON) • Low Threshold Voltage • Load/Power Switches • Logic Level Compatible • Power Supply Converter Circuits • Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953 Surface Mount Package • Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature SYMBOL UNITS VDS VGS 20 10 V ID ID 100 mA 200 mA PD TJ, Tstg 250 mW -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=10V, VDS=0 IDSS VDS=20V, VGS=0 BVDSS V MAX UNITS 1.0 μA 1.0 μA 0.9 V VGS(th) VGS=0, ID=100μA VDS=VGS, ID=250μA rDS(ON) rDS(ON) VGS=4.0V, ID=10mA VGS=2.5V, ID=10mA 3.0 Ω 4.0 Ω rDS(ON) VGS=1.5V, ID=1.0mA VDS =10V, ID=100mA 15 gfs Crss Ciss Coss ton toff VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDD=3.0V, VGS=2.5V, ID=10mA VDD=3.0V, VGS=2.5V, ID=10mA 20 V 0.6 100 Ω mS 4.0 pF 9.0 pF 9.5 pF 50 ns 75 ns R1 (25-January 2010) CMNDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-953 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Drain 2) Drain 3) Drain 4) Source 5) Gate MARKING CODE: AC R1 (25-January 2010) w w w. c e n t r a l s e m i . c o m