FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features C • 2W power dissipation • 3A continuous current • Excellent hFE characteristics up to 10A (pulsed) • Low saturation voltage B E Applications • Battery charging • MOSFET and IGBT gate driving • Motor drive E C Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 1,000 C B Pinout - top view FZT717TA Device marking FZT717 Issue 2 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com FZT717 Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage BVCBO -12 V Collector-emitter voltage BVCEO -12 V Emitter-base voltage BVEBO -5 V ICM -10 A Continuous collector current(a) IC -3 A Base current IB -500 mA Power dissipation at Tamb =25°C(a) Linear derating factor PD 2 W Tj, Tstg -55 to +150 °C Symbol Limit Unit RJA 62.5 °C/W Peak pulse current Operating and storage temperature range Thermal resistance Parameter Junction to ambient NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. Issue 2 - September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com FZT717 Typical characteristics Issue 2 - September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com FZT717 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Min. Typ. Max. Unit Conditions -12 V IC = 100µA BVCEO -12 V IC = 10mA Emitter-base breakdown voltage BVEBO -5 V IE = 100µA Collector cut-off current ICBO -100 nA VCB = -10V Emitter cut-off current IEBO -100 nA VEB = -4V Collector-emitter saturation voltage VCE(sat) -20 mV IC =-0.1A, IB =-10mA (*) -150 IC =-1A, IB =-10mA(*) -320 IC =-3A, IB =-50mA(*) Base-emitter saturation voltage VBE(sat) -1050 mV IC =-3A, IB =-50mA(*) Base-emitter turn-on voltage VBE(on) -1000 mV IC =-3A, VCE =-2V(*) Static forward current transfer hFE ratio 300 IC =-10mA, VCE =-2V(*) 300 IC =-100mA, VCE =-2V(*) 160 IC =-3A, VCE =-2V(*) 60 IC =-8A, VCE =-2V(*) 45 IC =-10A, VCE =-2V(*) Transition frequency fT 80 110 Output capacitance COBO 21 Switching times ton toff MHz 30 IC =-50mA, VCE =-10V f = 100MHz pF VCB =-10V, f = 1MHz 70 ns VCC =-6V, IC =-2A 130 ns IB1 = IB2 =50mA NOTES: (*) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2% Issue 2 - September 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com FZT717 Typical characteristics Issue 2 - September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com FZT717 Package outline - SOT223 DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - September 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com