DIODES ZX5T953GTA

ZX5T953G
100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN
SOT223
SUMMARY
BVCEO = -100V : RSAT = 60m ; IC = -5A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP
transistor offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
FEATURES
SOT223
• 5 amps continuous current
• Up to 10 amps peak current
• Very low saturation voltages
APPLICATIONS
• Motor driving
• Line switching
• High side switches
• Subscriber line interface cards (SLIC)
ORDERING INFORMATION
DEVICE
ZX5T953GTA
ZX5T953GTC
REEL
SIZE
7”
13”
PINOUT
TAPE
WIDTH
QUANTITY PER
REEL
12mm
1000 units
embossed
4000 units
DEVICE MARKING
• X5T953
TOP VIEW
ISSUE 2 - SEPTEMBER 2003
1
SEMICONDUCTORS
ZX5T953G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-base voltage
BV CBO
-140
Collector-emitter voltage
BV CEO
-100
V
Emitter-base voltage
BV EBO
-7
V
Continuous collector current (a)
IC
-5
A
Peak pulse current
I CM
-10
A
Power dissipation at T A =25°C (a)
PD
3.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
24
mW/°C
PD
1.6
W
12.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
SYMBOL
(a)
R ⍜JA
VALUE
UNIT
42
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - SEPTEMBER 2003
SEMICONDUCTORS
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ZX5T953G
CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2003
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SEMICONDUCTORS
ZX5T953G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
-140
-160
V
I C =-100␮A
Collector-emitter breakdown voltage
BV CER
-140
-160
V
I C =-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
-100
-115
V
I C =-10mA*
Emitter-base breakdown voltage
BV EBO
-7
-8.1
V
I E =-100␮A
Collector cut-off current
I CBO
Collector cut-off current
⬍1
⬍1
I CER
R ⱕ 1k⍀
MAX. UNIT CONDITIONS
-20
nA
V CB =-100V
-0.5
␮A
VCB=-100V,Tamb=100⬚C
-20
nA
V CB =-100V
-0.5
␮A
VCB=-100V,Tamb=100⬚C
Emitter cut-off current
I EBO
⬍1
-10
nA
V EB =-6V
Collector-emitter saturation voltage
V CE(SAT)
-20
-30
mV
-70
-90
mV
I C =-0.1A, I B =-10mA*
IC=-1A, IB=-100mA*
-120
-150
mV
IC=-2A, IB=-200mA*
-240
-340
mV
IC=-4A, IB=-400mA*
I C =-4A, I B =-400mA*
Base-emitter saturation voltage
V BE(SAT)
-985
-1100
mV
Base-emitter turn-on voltage
V BE(ON)
-920
-1050
mV
Static forward current transfer ratio
H FE
I C =-4A, V CE =-2V*
100
250
100
200
25
50
IC=-3A, VCE=-1V*
15
30
IC=-4A, VCE=-1V*
5
IC=-10A, VCE=-1V*
125
I C =-10mA, V CE =-1V*
IC=-1A, VCE=-1V*
300
MHz IC =-100mA, VCE =-10V
Transition frequency
fT
Output capacitance
C OBO
42
pF
V CB =-10V, f=1MHz*
Switching times
t ON
42
ns
t OFF
540
I C =-1A, V CC =-10V,
I B1 =I B2 =-100mA
f=50MHz
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
ISSUE 2 - SEPTEMBER 2003
SEMICONDUCTORS
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ZX5T953G
TYPICAL CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2003
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SEMICONDUCTORS
ZX5T953G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
b2
2.90
3.10
0.114
0.122
C
0.23
0.33
0.009
0.013
D
6.30
6.70
0.248
0.264
6.70
7.30
0.264
0.287
E1
3.30
3.70
0.130
0.146
L
0.90
-
0.355
-
-
-
-
-
-
© Zetex plc 2003
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ISSUE 2 - SEPTEMBER 2003
SEMICONDUCTORS
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