A Product Line of Diodes Incorporated ZXMN10A11K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 3.5A 450mΩ @ VGS = 6V 3.1A 100V • Fast switching speed • Low input capacitance • “Green” Component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor control • DC-DC Converters • Power management functions • Uninterrupted power supply • Case: TO252-3L • Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.33 grams (approximate) D D TO252-3L G D G Pin Out – Top View Top View Ordering Information Product ZXMN10A11KTC Note: S S Equivalent Circuit (Note 1) Marking See Below Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information ZXMN 10A11 YYWW ZXMN10A11K Document Number DS32058 Rev. 2 - 2 ZXMN = Product Type Marking Code, Line 1 10A11 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) Thermal Characteristics (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Unit V V Value 4.06 32.4 8.5 68.0 2.11 16.8 30.8 14.7 59.1 1.10 -55 to 150 Unit A A A A @TA = 25°C unless otherwise specified Characteristic Symbol (Note 2) Power dissipation Linear derating factor (Note 3) PD (Note 6) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Value 100 ±20 3.5 2.8 2.4 9.9 8.4 9.9 (Note 2) (Note 3) (Note 6) (Note 5) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. ZXMN10A11K Document Number DS32058 Rev. 2 - 2 2 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Thermal Characteristics 10 10 ID Drain Current (A) ID Drain Current (A) RDS(on) Limited 1 DC 1s 100m 100ms Limited 1 DC 1s 100m 10ms T amb=25°C 25mm x 25mm 1oz FR4 10m RDS(on) 1 1ms 100µs 100ms 100 40 D=0.5 30 20 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k 35 T amb=25°C 30 50mm x 50mm 2oz FR4 25 20 D=0.5 15 D=0.1 D=0.2 10 D=0.05 5 Single Pulse 0 100µ 1m 10m 100m Single Pulse T amb=25°C 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1m 10m 100m 1 10 1k 100 1k 4.0 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Pulse Power Dissipation Document Number DS32058 Rev. 2 - 2 100 4.5 Pulse Width (s) ZXMN10A11K 10 Transient Thermal Impedance Max Power Dissipation (W) Max Power Dissipation (W) Transient Thermal Impedance 1 100µ 1 Pulse Width (s) Pulse Width (s) 100 100 Safe Operating Area Thermal Resistance (°C/W) Thermal Resistance (°C/W) 50 25mm x 25mm 1oz FR4 10 VDS Drain-Source Voltage (V) Safe Operating Area T amb=25°C 100µs 1 VDS Drain-Source Voltage (V) 60 1ms 50mm x 50mm 2oz FR4 10m 10 10ms T amb=25°C Derating Curve 3 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V µA nA ID = 250μA, VGS = 0V VDS = 100V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 2 ⎯ V Static Drain-Source On-Resistance (Note 7) RDS (ON) ⎯ ⎯ gfs VSD trr Qrr ⎯ ⎯ ⎯ ⎯ 4 0.850 26 30 4 0.350 0.450 ⎯ 0.950 ⎯ ⎯ S V ns nC ID = 250μA, VDS = VGS VGS = 10V, ID = 2.6A VGS = 6V, ID = 1.3A VDS = 15V, ID = 2.6A IS = 1.85A, VGS = 0V Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 274 21 11 3.5 5.4 1.4 1.5 2.7 1.7 7.4 3.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Forward Transconductance (Notes 7 & 8) Diode Forward Voltage (Note 7) Reverse recovery time (Note 8) Reverse recovery charge (Note 8) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Notes: Ω Test Condition IS = 1.0A, di/dt = 100A/μs VDS = 50V, VGS = 0V f = 1MHz VGS = 6V VGS = 10V VDS = 50V, ID = 2.5A VDD = 50V, VGS = 10V ID = 1.0A, RG ≅ 6Ω 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. ZXMN10A11K Document Number DS32058 Rev. 2 - 2 4 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Typical Characteristics 10 10 10V ID Drain Current (A) 4.5V 1 4V VGS 0.1 3.5V 0.01 1 4V 3.5V 0.1 3V VGS 2.5V 1 1 10 0.1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C T = 25°C VDS = 10V 0.1 3 4 5 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 VGS Gate-Source Voltage (V) VGS = 10V ID = 2.6A RDS(on) VGS(th) VGS = VDS ID = 250uA 0 50 100 150 Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature 10 100 4V VGS 4.5V 10 5V 1 10V T = 25°C 0.1 1 ISD Reverse Drain Current (A) 3.5V 0.1 0.01 1 VDS Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) ID Drain Current (A) 5V 4.5V 0.01 0.1 RDS(on) Drain-Source On-Resistance (Ω) 10V T = 150°C 5V ID Drain Current (A) T = 25°C T = 150°C 1 T = 25°C 0.1 0.01 10 On-Resistance v Drain Current ZXMN10A11K Document Number DS32058 Rev. 2 - 2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) ID Drain Current (A) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Typical Characteristics - continued 10 C Capacitance (pF) VGS = 0V f = 1MHz 300 CISS 200 COSS CRSS 100 0 1 10 100 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 400 ID = 2.5A 8 6 4 2 VDS = 50V 0 0 1 2 3 4 5 6 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN10A11K Document Number DS32058 Rev. 2 - 2 Switching time test circuit 6 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Millimeters Min Max Min Max Max Min A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC 0.090 BSC Max 2.29 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - θ1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - ZXMN10A11K Document Number DS32058 Rev. 2 - 2 7 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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