EIC 1N5616

Certificate TH97/10561QM
1N5614 - 1N5622
Certificate TW00/17276EM
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
*
*
*
*
*
*
Glass passivated chip
High forward surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.161 (4.1)
MECHANICAL DATA :
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 50 μA
Maximum Average Forward Current at Ta = 55 °C
at Ta = 100 °C
UNIT
VRWM
200
400
600
800
1000
V
VBR(MIN)
220
440
660
880
1100
V
IF(AV)
1.0
0.75
A
Peak Forward Surge Current
IFSM
30
A
Minimum Forward Voltage at I F = 3.0 A
VF(MIN)
0.8
V
Maximum Forward Voltage at I F = 3.0A
VF(MAX)
1.3
V
at VRWM , Ta = 25 °C
IR
0.5
at VRWM , Ta = 100 °C
IR(H)
25
Trr
2.0
μs
RӨJL
38
°C/W
TJ, TSTG
-65 to +175
°C
(Ta = 100 °C,f = 60 Hz, I F(AV) = 750 mA for ten 8.3 ms
surges @ 1 minute intervals)
Maximum Reverse Current
Maximum Reverse Recovery Time ( Note 1 )
Thermal Resistance , Junction to Lead (Note 2)
Operating Junction and Storage Temperature Range
μA
Notes :
(1) Reverse Recovery Test Conditions : I F = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A.
(2) At 3/8"(10 mm) lead length form body.
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Rev. 02 : July 24, 2006