TH97/10561QM SME1A -SME1M TW00/17276EM SURFACE MOUNT HIGH EFFICIENT RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Ampere 0.6(0.024) 1.0(0.039) SOD-123FL 2.5(0.098) 2.9(0.114) 0.8(0.031) 1.2(0.047) Glass passivated junction chip High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb Free / RoHS Compliant 0.05(0.002) 0.25(0.010) 1.55(0.061) 1.95(0.077) FEATURES : * * * * * * * IATF 0060636 SGS TH07/1033 MECHANICAL DATA : max0.1(0.004) 0.5(0.020) 1.1(0.043) * Case: JEDEC SOD-123FL, molded plastic over passivated chip * Terminals: Solder Plated, solderable per MIL-STD-750, Method 2026 * Polarity: Color band denotes cathode end * Mounting position : Any * Weight: 0.02 gram (Approximate) 3.5(0.138) 3.9(0.154) Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL SME1A SME1B SME1D SME1E SME1G SME1J SME1K SME1M UNIT EA EB ED EE EG EJ EK EM Maximum Recurrent Peak Reverse Voltage Marking VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Current Ta = 55 °C IF(AV) 1.0 A IFSM 30 A Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C VF 1.1 IR 1.7 2.2 5.0 IR(H) µA 50 50 V µA Maximum Reverse Recovery Time ( Note 1 ) Trr 75 ns Typical Junction Capacitance ( Note 2 ) CJ 50 pF Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : January 12, 2009 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( SME1A - SME1M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr 10 Ω + 0.5 A D.U.T. + 0 PULSE GENERATOR ( NOTE 2 ) 50 Vdc (approx) 1Ω - 0.25 A OSCILLOSCOPE ( NOTE 1 ) - 1.0 A SET TIME BASE FOR 25-35 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 1 cm 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 1.0 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 0.8 0.6 0.4 0.2 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 24 18 12 6 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 0 175 1 2 AMBIENT TEMPERATURE, ( °C) 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 10 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES TJ = 100 °C SME1J-SEM1K SME1A-SME1G 1.0 SME1M TJ = 25 °C 0.1 0.6 0.9 1.2 1.5 1.8 2.1 2.4 0.1 TJ = 25 °C 0.01 Pulse Width = 300 μs 2% Duty Cycle 0.01 0.3 1.0 2.7 3.0 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 3.3 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : January 12, 2009