FREESCALE MC13144

Freescale Semiconductor, Inc.Order this document by MC13144/D
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
VHF – 2.0 GHz LOW
NOISE AMPLIFIER WITH
PROGRAMMABLE BIAS
The MC13144 is designed in the Motorola High Frequency Bipolar
MOSIAC V wafer process to provide excellent performance in analog and
digital communication systems. It includes a cascoded LNA usable up to
2.0 GHz and at 1.8 Vdc, with 2 bit digital programming of the LNA bias.
Targeted applications are in the UHF Family Radio Services, UHF and
800 MHz Special Mobile Radio, 800 MHz Cellular and GSM, PCS, DECT
and PHS at 1.8 to 2.0 GHz and Cordless Telephones in the 902 to 928 MHz
band covered by FCC Title 47; Part 15. The MC13144 offers the following
features:
•
•
•
•
•
•
•
SEMICONDUCTOR
TECHNICAL DATA
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# "
"!
17 dB Gain at 900 MHz
1.4 dB Noise Figure at 900 MHz
1.0 dB Compression Point of –7.0 dBm; Input Third Order Intercept
Point of –5.0 dBm
Low Operating Supply Voltage (1.8 to 6.0 Vdc)
8
1
Programmable Bias with Enable 1 and Enable 2
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
Enable 1 and Enable 2 Programmed High for Optimal Noise Figure and
Gain Associated with NF
Can Override Enable and Externally Program In Up to 15 mA
MOSAIC V is a trademark of Motorola, Inc.
Typical Application as 900 MHz Low Noise Amplifier
PIN CONNECTIONS AND
FUNCTIONAL BLOCK DIAGRAM
En1 En2
1.6 p
8
7
6
RF
Output
RF
Input
2
3
1
8 En1
VEE
2
7 En2
VEE
3
6 VEE
VCC
4
5 RFout
5
8.2 nH
1
RFin
4
47 p
VCC
5.6 nH
100 n
100 p
ORDERING INFORMATION
This device contains 67 active transistors.
This document contains information on a new product. Specifications and information herein
are subject to change without notice.
Device
Operating
Temperature Range
Package
MC13144D
TA = – 40 to 85°C
SO–8
 Motorola, Inc. 1998
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Go to: www.freescale.com
Rev 1
1
Freescale Semiconductor,
Inc.
MC13144
MAXIMUM RATINGS
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Rating
Symbol
Value
Unit
ARCHIVED
FREESCALE SEMICONDUCTOR,
INC.7.0
2005
Power Supply BY
Voltage
VCC(max)
Junction Temperature
Storage Temperature Range
Vdc
TJmax
150
°C
Tstg
–65 to 150
°C
NOTES: 1. Devices should not be operated at or outside these values. The “Recommended Operating
Conditions” provide for actual device operation.
2. ESD data available upon request.
Rating
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Power Supply Voltage
Symbol
Min
Typ
Max
Unit
VCC
1.8
–
6.0
Vdc
DC ELECTRICAL CHARACTERISTICS (TA = 25°C; VCC = 3.0 Vdc; fRF = 1.0 GHz; Pin = –25 dBm)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current (Power Down)
(En1 = En2 = Low)
ICC0
–
0.0001
20
µA
Supply Current (Power Up)
(En1 = Low; En2 = High)
ICC1
–
1.2
2.0
mA
Supply Current (Power Up)
(En1 = High; En2 = Low)
ICC2
–
3.4
5.0
mA
Supply Current (Power Up)
ICC3
–
8.2
12
mA
(En1 = High; En2 = High)
AC ELECTRICAL CHARACTERISTICS (TA = 25°C; VCC = 3.0 Vdc; fRF = 1.0 GHz; Pin = –25 dBm)
Characteristic
Symbol
Min
Typ
Max
Unit
Amplifier Gain (50 Ω Insertion Gain)
(En1 = En2 = High)
S212
–
12
–
dB
Amplifier Reverse Isolation
(En1 = En2 = High)
S12
–
–35
–
dB
Amplifier Input Return Loss
(En1 = En2 = High)
Γinamp
–
–10
–
dB
Γoutamp
–
–15
–
dB
–
–
–11
–5.0
–
–
Amplifier Output Return Loss
(En1 = En2 = High)
Input 3rd Order Intercept Point (En1 = En2 = High)
df = 100 kHz
df = 1.0 MHz
IIP3
dBm
Amplifier Noise Figure
(Figure 1; En1 = En2 = High)
NF
–
1.4
2.0
dB
Amplifier Gain @ NF
(Figure 1; En1 = En2 = High)
GNF
–
17
–
dB
Amplifier Gain (En1 = En2 = High)
Gain3
14
17
–
dB
Amplifier Gain
(En1 = High; En2 = Low)
Gain2
10
13.3
–
dB
Amplifier Gain
Gain1
6.0
9.2
–
dB
(En1 = Low; En2 = High)
2
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ARCHIVE INFORMATION
RECOMMENDED OPERATING CONDITIONS
Freescale Semiconductor,
Inc.
MC13144
CIRCUIT DESCRIPTION
General
LNA
ARCHIVED
BYisFREESCALE
SEMICONDUCTOR,
The MC13144
a low noise amplifier
with programmable INC. 2005
bias. This device is designated for use in the front end section
in analog and digital FM systems such as Wireless Local
Area Network (LAN), Digital European Cordless Telephone
(DECT), PHS, PCS, GPS, Cellular, UHF and 800 MHz
Special Mobile Radio (SMR), UHF Family Radio Services
and 902 to 928 MHz cordless telephones.
The LNA is a unique and patented cascode amplifier with
digitally (2–bit) programmable bias (see Internal Circuit
Schematic). Typical gain of the LNA is 17 dB for minimum
noise figure of 1.4 dB at 900 MHz.
Programmable Bias/Enable Circuit
This unique circuit allows for 3 bias levels and a standby
mode in which the LNA can be externally biased as desired.
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Current Regulation/Enable
Temperature compensating voltage independent current
regulation is digitally controlled by a 2–bit programmable
bias/enable circuit.
Figure 1. MC13144 Internal Circuit*
4
VCC
5 RF
Output
400
10 p
6
VEE
–A
1
8
7
En1
RF In
2, 3
VEE
En2
V1
NOTE:
V2
V3
* The MC13144 uses a unique and patent pending circuit topology.
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Go to: www.freescale.com
3
Freescale Semiconductor,
Inc.
MC13144
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APPLICATIONS INFORMATION
Evaluation PC Board
f = 1900 mHz
ARCHIVED
BY PCB
FREESCALE
SEMICONDUCTOR,
The evaluation
is very versatile
and is intended to INC. 2005
ICC/Gain
be used across the entire useful frequency range of this
device. The PC board layout accommodates all SMT
En1 Low
components on the circuit side (see Circuit Side Component
En1 High
Placement View).
LNA Input/Output
The LNA input impedance is the base of a common emitter
cascode amplifier. The LNA output is the collector of the
cascode stage and it is loaded with a series resistor of 400 Ω
and a capacitor of 10 pF to provide stability.
Digitally Programmable Bias/Enable
The LNA is enabled by a 2 bit (En1 and En2)
programmable bias circuit. The internal circuit shows the
comparator circuit which programs the internal regulator. The
logic table below shows the bias and typical performance.
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ÁÁÁÁÁÁ
En2 High
0 mA/–22 dB
1.2 mA/7.5 dB
3.4 mA/10 dB
8.2 mA/13 dB
Input/Output Matching
A typical application at 900 MHz yields 17 dB gain and
1.4 dB noise figure. In this circuit a series inductor of 5.6 nH
is used to match the input and a shunt inductor of 8.2 nH
which also serves as an RFC and a series capacitor of 0.9 p
is used to match the LNA output to 50 Ω load impedance.
It may be desirable to use a RF ceramic or SAW filter after
the LNA when driving a mixer to provide image frequency
rejection. The image filter is selected based on cost, size and
performance tradeoffs. Typical RF filters have 3.0 to 5.0 dB
insertion loss. Interface matching between the RF input, RF
filter and the mixer is shown in Application Circuit and the
Component Placement View.
A typical application at 1900 MHz yields 13 dB gain and
2.7 dB noise figure. In this circuit a series inductor of 5.6 nH
and a series capacitor of 1.0 pF are used to match the input
and a shut inductor of 2.0 nH and a series capacitor of 2.0 pF
are used to match the LNA output to 50 Ω load impedance.
f = 900 mHz
ICC/Gain
En2 Low
En2 High
En1 Low
0 mA/–22 dB
1.2 mA/9.2 dB
En1 High
3.4 mA/13 dB
8.2 mA/17 dB
Figure 2. MC13144D Application Circuit
(926.5 MHz)
En1 En2
VCC
100 p
39 nH
1.0 M
Toko
Ceramic
Filter
8.2 nH
RF
Output
0.4 p
8
7
6
5
8.2 nH
MC13144D
47
1
RF
Input
4
47 p
2
3
100 n
4
100 p
VCC
5.6 nH
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Component Selection
The evaluation PC board is laid out for the 4DFA (2 pole
SMD Type) and 4DFB (3 pole SMD Type) filters which are
available for applications in Cellular and GSM, GPS (1.2 to
1.5 GHz), DECT, PHS and PCS (1.8 to 2.0 GHz) and
ISM Bands (902 to 928 MHz and 2.4 to 2.5 GHz). In the
926.5 MHz Application Circuit, a ceramic deielectric filter
is used (Toko part # 4DFA–926A10).
En2 Low
Freescale Semiconductor,
Inc.
MC13144
Figure 3. Typical S–Parameters VCC = 3.0 Vdc; En1 = En2 =1
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
0.91
–11
4.2
143
0.00028
24
0.80
–10
125
0.92
–14
4.2
136
0.00033
71
0.79
–10
150
0.90
–16
4.2
127
0.0006
60
0.79
–11
175
0.89
–19
4.2
118
0.0011
80
0.78
–12
200
0.89
–22
4.0
108
0.0014
35
0.78
–13
250
0.88
–26
3.8
97
0.0015
39
0.78
–14
300
0.86
–32
4.1
77
0.0022
52
0.78
–17
350
0.85
–36
3.5
59
0.0017
65
.078
–19
400
0.84
–41
3.7
50
0.0024
68
0.79
–21
450
0.83
–46
3.7
26
0.0021
63
0.79
–24
500
0.81
–50
3.2
15
0.0028
56
0.79
–26
550
0.80
–55
3.5
–3.0
0.0027
51
0.80
–29
600
0.79
–59
3.1
–22
0.0038
46
0.81
–32
650
0.77
–63
3.0
–36
0.0057
30
0.82
–35
700
0.77
–67
2.8
–52
0.0067
32
0.83
–39
750
0.77
–72
2.5
–68
0.0095
26
0.83
–43
800
0.76
–77
2.2
–77
0.014
13
0.80
–49
850
0.74
–82
2.2
–86
0.019
12
0.75
–51
900
0.71
–85
2.3
–100
0.020
38
0.73
–51
950
0.69
–88
2.3
–117
0.021
55
0.74
–51
1000
0.67
–91
2.3
–132
0.020
72
0.76
–54
1100
0.67
–98
2.2
–163
0.022
87
0.76
–59
1200
0.66
–106
2.1
168
0.026
107
0.79
–65
1300
0.79
–72
1.9
136
0.030
134
0.64
–73
1400
0.64
–121
1.9
100
0.038
150
0.80
–80
1500
0.62
–128
1.9
74
0.053
170
0.81
–87
1600
0.61
–135
1.7
40
0.068
157
0.82
–96
1700
0.59
–145
1.5
7.0
0.076
120
0.81
–105
1800
0.58
–152
1.4
–24
0.092
97
0.80
–115
1900
0.54
–125
1.2
–57
0.11
59
0.74
–125
2000
0.47
–130
1.0
–79
0.093
195
0.68
–130
Freq (MHz)
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S11 Mag
100
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Freescale Semiconductor,
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MC13144
Figure 4. Circuit Side Component Placement View
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MC13144D Rev 0
E2
47
47 p
100 n
100 p
5.6 nH
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MC13144D
LNA
Out
LNA
In
VCC
Figure 5. Circuit Side View
MC13144D Rev 0
E2
E1
LNA
Out
LNA
In
VCC
NOTES: Critical dimensions are 50 MIL centers lead to lead in SO–8 footprint.
Also line widths to labeled ports excluding VCC, E1 and E2 are 50 MIL (0.050 inch).
FR4 PCB, 1/32 inch.
6
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1.0 M
8.2 nH
0.4 p
E1
8.2 nH 100 p 39 nH
Toko Ceramic
Filter
Freescale Semiconductor,
Inc.
MC13144
Figure 6. Ground Side View
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LNA In
VCC
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E1
LNA Out
E2
MC13144D Rev 0
NOTES: FR4 PCB, 1/32 inch.
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Freescale Semiconductor,
Inc.
MC13144
OUTLINE DIMENSIONS
ARCHIVED BY FREESCALE SEMICONDUCTOR,
INC. 2005
D SUFFIX
PLASTIC PACKAGE
CASE 751–06
(SO–8)
ISSUE T
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
C
5
0.25
H
E
M
B
M
1
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4
h
B
X 45 _
e
q
A
C
SEATING
PLANE
L
0.10
A1
B
0.25
M
C B
S
A
S
DIM
A
A1
B
C
D
E
e
H
h
L
q
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.35
0.49
0.19
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
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8
◊
MC13144/D
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D
A