Freescale Semiconductor Technical Data Gallium Arsenide CATV Amplifier Module MHW10276N LIFETIME BUY Features • 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions Applications • CATV Systems Operating in the 40 to 1000 MHz Frequency Range • Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Driver Amplifier in Linear General Purpose Applications Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module • RoHS Compliant 1000 MHz 27.8 dB GAIN 132 - CHANNEL GaAs CATV AMPLIFIER MODULE CASE 1302 - 01, STYLE 1 Table 1. Maximum Ratings Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +65 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC - 20 to +100 °C Storage Temperature Range Tstg - 40 to +100 °C Table 2. ESD Maximum Ratings Rating Input Value Output Value Unit 200 200 V 2 2 kV Surge Voltage per IEC 1000 - 4 - 5 Human Body Model per Mil. Std. 1686 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 — 1000 MHz Power Gain 1000 MHz Gp 27 27.8 28.5 dB Slope 50 - 1000 MHz S 0.3 0.9 1.45 dB GF — — 0.8 dB Gain Flatness (40 - 995 MHz, Peak - to - Valley) Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 Document Number: MHW10276N Rev. 0, 7/2006 MHW10276N 1 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued) Input Return Loss (Zo = 75 Ohms) LIFETIME BUY Output Return Loss (Zo = 75 Ohms) Symbol Min Typ Max 20 19 18 14.5 — — — — — — — — 20 18 18 12.5 — — — — — — — — IRL 40 - 200 MHz 201 - 600 MHz 601 - 870 MHz 871 - 1000 MHz dB ORL 40 - 200 MHz 201 - 600 MHz 601 - 870 MHz 871 - 1000 MHz Unit dB Composite Second Order (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT CSO79 CSO112 CSO132 — — — - 70 - 66 - 66 - 64 - 62 - 60 Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55.25 MHz) (Vout = +44 dBmV/ch., FM = 55.25 MHz) (Vout = +44 dBmV/ch., FM = 55.25 MHz) 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT XMD79 XMD112 XMD132 — — — - 60 - 60 - 60 - 53 - 53 - 53 Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT CTB79 CTB112 CTB132 — — — - 71 - 68 - 66 - 65 - 61 - 60 NF — — — — 5 5 5 5 5.5 — — 6.5 dB IDC 235 250 265 mA Noise Figure DC Current (VDC = 24 V, TC = 45°C) dBc dBc dBc 50 MHz 550 MHz 750 MHz 1000 MHz LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 Characteristic MHW10276N 2 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A S B A Z 0.010 M T F M A M V J F NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. Q 2X R F 2X 6−32UNC−2B L 2X 0.010 U Z T A M M E 1 2 3 5 7 8 9 C N K E 4X 2X 0.010 M Z T A G 7X P D 0.020 Y INCHES MIN MAX −−− 1.775 −−− 1.085 −−− 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 −−− 0.600 1.500 BSC 0.200 BSC −−− 0.250 0.435 −−− 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX −−− 45.085 −−− 27.559 −−− 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 −−− 15.24 38.100 BSC 5.080 BSC −−− 6.350 11.049 −−− 10.160 BSC 3.861 4.140 0.229 0.279 Z X T W DIM A B C D E F G J K L N P Q R S U V W X Y Z X M T A M X M STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT CASE 1302 - 01 ISSUE E MHW10276N RF Device Data Freescale Semiconductor 3 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006. All rights reserved. MHW10276N Document Number: MHW10276N 4Rev. 0, 7/2006 RF Device Data Freescale Semiconductor