Freescale Semiconductor Technical Data Document Number: MMG2001 Rev. 3, 7/2005 Will be replaced by MMG2001NT1 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MMG2001T1 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 -, 112 - and 132 -Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions • In Tape and Reel. T1 Suffix = 1,000 Units per 16 mm, 13 inch Reel. Applications • CATV Systems Operating in the 40 to 870 MHz Frequency Range • Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Driver Amplifier in Linear General Purpose Applications Description • 24 Vdc Supply, 40 to 870 MHz, CATV Integrated Forward Power Doubler Amplifier Module 870 MHz 21 dB GAIN 132 -CHANNEL CATV INTEGRATED AMPLIFIER MODULE 16 1 CASE 978-03 PFP-16 Table 1. Maximum Ratings Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 °C Storage Temperature Range Tstg -40 to +100 °C Symbol Value Unit RθJC 4.7 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Pin 3 Pin 15 Q3 Q1 Pin 4 RG3 RS1 Pin 5 Pin 13 RS2 RG4 Pin 6 Q2 Q4 Pin 7 Figure 1. Functional Diagram Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor Pin 11 N.C. 1 16 N.C. N.C. 2 15 VD3 VG1 3 14 N.C. VS1 4 13 VGC VC 5 12 N.C. VS2 6 11 VD4 VG2 N.C. 7 8 10 9 N.C. N.C. (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections MMG2001T1 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (minimum) Machine Model M1 (minimum) Charge Device Model C5 (minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) Characteristic Symbol Min Typ Max Unit BW 40 — 870 MHz — — 19 21 — — S — 0.8 — dB Gain Flatness (40 - 870 MHz, Peak to Valley) GF — 0.5 — dB Input Return Loss (Zo = 75 Ohms) f = 40-160 MHz f = 161-450 MHz f = 451-870 MHz IRL — — 21 19 22 — — — dB Output Return Loss (Zo = 75 Ohms) f = 40-400 MHz f = 401-870 MHz ORL — — 22 17 — — dB Frequency Range Power Gain 40 MHz 870 MHz Slope 40 - 870 MHz Gp dB Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CSO132 CSO112 CSO79 CSO112 CSO112 CSO112 CSO79 CSO79 CSO79 — — — — — — — — — -68 -70 -74 -63 -62 -61 -67 -72 -71 -60 -62 -66 — — — — — — Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt XMD132 XMD112 XMD79 XMD112 XMD112 XMD112 XMD79 XMD79 XMD79 — — — — — — — — — -55 -57 -60 -51 -53 -56 -58 -60 -65 -53 -55 -58 — — — — — — Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CTB132 CTB112 CTB79 CTB112 CTB112 CTB112 CTB79 CTB79 CTB79 — — — — — — — — — -56 -60 –66 -58 -59 -62 -64 -69 -72 -54 -58 –64 — — — — — — NF — — — — 4.0 4.0 4.0 4.0 4.5 4.5 4.5 4.5 dB IDC 410 425 440 mA Noise Figure DC Current (VDC = 24 V, TC = 45°C) dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MMG2001T1 2 RF Device Data Freescale Semiconductor C7 R9 Pin 15 C5 R11 Pin 3 Pin 4 T2 C3 Pin 13 R15 Pin 5 T1 RF INPUT C10 R13 Pin 6 R12 C6 C1 R17 C9 D2 R16 RF OUTPUT T3 C11 VCC Pin 7 D3 C4 Pin 11 R10 C8 R14 R1 R18 R2 R3 D1 R4 R7 R6 Q2 Q1 C2 R5 R8 Figure 3. MMG2001T1 50 -870 MHz Test Circuit Schematic Table 6. MMG2001T1 50 -870 MHz Test Circuit Component Designations and Values Designation Description C1, C7, C8, C11 220 pF Chip Capacitors (0603) C2, C3, C4, C9, C10 0.01 mF Chip Capacitors (0603) C5, C6 1.8 pF Chip Capacitors (0603) D1 5.1 V Zener Diode, On/MM3Z5V1T1 D2 27 V Zener Diode, On/MM3Z27VT1 D3 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27AT3 Q1, Q2 Dual Transistors Package, On/MBT3904DW1T1 R1 2.2 kW, 1/4 W Chip Resistor (1206) R2 680 W Chip Resistor (0603) R3 180 W Chip Resistor (0603) R4 1600 W Chip Resistor (0603) R5 820 W Chip Resistor (0603) R6 120 W Chip Resistor (0603) R7 1.5 kW Chip Resistor (0603) R8 8 W, 1 W Chip Resistor (2512) R9, R10, R15 470 W Chip Resistors (0603) R11, R12 18 W Chip Resistors (0603) R13, R14 680 W Chip Resistors (0603) R16 2.4 kW Chip Resistor (0603) R17 6.2 kW Chip Resistor (0603) R18 0 W Chip Resistor (0603) T1 Input Transformer, 77PC016E080 T2 Output Transformer, 77PC016E071 T3 Output Transformer, 77PC016E072 PCB FR4, 62 mil, εr = 4.81 MMG2001T1 RF Device Data Freescale Semiconductor 3 MMG2001R2 Rev 0 R5 R16 R7 R18 C7 R9 Q1 R15 C3 R11 Q2 R13 B C R6 C5 T1 T2 C9 T3 C6 R8 C2 R10 C1 R12 C4 C8 D2 R14 C11 R17 C10 R2 R3 R4 R1 D1 D3 GND Not Active +24 V Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MMG2001T1 50 -870 MHz Test Circuit Component Layout MMG2001T1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS CTB, COMPOSITE TRIPLE BEAT (dBc) −60 60 dBmV −65 58 dBmV −70 56 dBmV −75 52 dBmV 50 dBmV 54 dBmV −80 48 dBmV 79 Channels, 13.5 dB Tilt @ 870 MHz −85 0 200 400 600 f, FREQUENCY (MHz) CSO, COMPOSITE SECOND ORDER (dBc) Figure 5. Composite Triple Beat versus Frequency −70 60 dBmV 58 dBmV −75 56 dBmV −80 48 dBmV 52 dBmV 50 dBmV −85 54 dBmV 79 Channels, 13.5 dB Tilt @ 870 MHz −90 0 200 400 600 f, FREQUENCY (MHz) XMD, CROSS MODULATION DISTORTION (dBc) Figure 6. Composite Second Order versus Frequency −55 79 Channels, 13.5 dB Tilt @ 870 MHz −60 60 dBmV −65 58 dBmV −70 56 dBmV 54 dBmV −75 52 dBmV −80 50 dBmV −85 48 dBmV −90 0 200 400 600 f, FREQUENCY (MHz) Figure 7. Cross Modulation Distortion versus Frequency MMG2001T1 RF Device Data Freescale Semiconductor 5 NOTES MMG2001T1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 D1 e/2 D 8 9 E1 8X bbb M B BOTTOM VIEW E C B S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ b1 Y c A A2 b DATUM PLANE SEATING PLANE H aaa M ccc C q W GAUGE PLANE W L C A SECT W-W L1 C c1 A1 1.000 0.039 S NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC −−− 0.600 0_ 7_ 0.200 0.200 0.100 DETAIL Y CASE 978-03 ISSUE C PFP -16 MMG2001T1 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale.s Environmental Products program, go to http://www.freescale.com/epp. USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MMG2001T1 Document Number: MMG2001 8Rev. 3, 7/2005 RF Device Data Freescale Semiconductor