FREESCALE MMG2001T1

Freescale Semiconductor
Technical Data
Document Number: MMG2001
Rev. 3, 7/2005
Will be replaced by MMG2001NT1 in Q305. N suffix indicates 260°C reflow capable.
The PFP-16 package has had lead-free terminations from its initial release.
MMG2001T1
Gallium Arsenide
CATV Integrated Amplifier Module
Features
• Specified for 79 -, 112 - and 132 -Channel Loading
• Excellent Distortion Performance
• Higher Output Capability
• Built-in Input Diode Protection
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
• In Tape and Reel. T1 Suffix = 1,000 Units per 16 mm, 13 inch Reel.
Applications
• CATV Systems Operating in the 40 to 870 MHz Frequency Range
• Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Driver Amplifier in Linear General Purpose Applications
Description
• 24 Vdc Supply, 40 to 870 MHz, CATV Integrated Forward Power Doubler
Amplifier Module
870 MHz
21 dB GAIN
132 -CHANNEL
CATV INTEGRATED AMPLIFIER
MODULE
16
1
CASE 978-03
PFP-16
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Vin
+70
dBmV
DC Supply Voltage
VCC
+26
Vdc
Operating Case Temperature Range
TC
-20 to +100
°C
Storage Temperature Range
Tstg
-40 to +100
°C
Symbol
Value
Unit
RθJC
4.7
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Pin 3
Pin 15
Q3
Q1
Pin 4
RG3
RS1
Pin 5
Pin 13
RS2
RG4
Pin 6
Q2
Q4
Pin 7
Figure 1. Functional Diagram
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
Pin 11
N.C.
1
16
N.C.
N.C.
2
15
VD3
VG1
3
14
N.C.
VS1
4
13
VGC
VC
5
12
N.C.
VS2
6
11
VD4
VG2
N.C.
7
8
10
9
N.C.
N.C.
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
MMG2001T1
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (minimum)
Machine Model
M1 (minimum)
Charge Device Model
C5 (minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22-A113, IPC/JEDEC J-STD-020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
BW
40
—
870
MHz
—
—
19
21
—
—
S
—
0.8
—
dB
Gain Flatness (40 - 870 MHz, Peak to Valley)
GF
—
0.5
—
dB
Input Return Loss (Zo = 75 Ohms)
f = 40-160 MHz
f = 161-450 MHz
f = 451-870 MHz
IRL
—
—
21
19
22
—
—
—
dB
Output Return Loss (Zo = 75 Ohms)
f = 40-400 MHz
f = 401-870 MHz
ORL
—
—
22
17
—
—
dB
Frequency Range
Power Gain
40 MHz
870 MHz
Slope
40 - 870 MHz
Gp
dB
Composite Second Order
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
132-Channel FLAT
112-Channel FLAT
79-Channel FLAT
112-Channel, 12 dB Tilt
112-Channel, 13.5 dB Tilt
112-Channel, 17 dB Tilt
79-Channel, 12 dB Tilt
79-Channel, 13.5 dB Tilt
79-Channel, 17 dB Tilt
CSO132
CSO112
CSO79
CSO112
CSO112
CSO112
CSO79
CSO79
CSO79
—
—
—
—
—
—
—
—
—
-68
-70
-74
-63
-62
-61
-67
-72
-71
-60
-62
-66
—
—
—
—
—
—
Cross Modulation Distortion @ Ch 2
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
132-Channel FLAT
112-Channel FLAT
79-Channel FLAT
112-Channel, 12 dB Tilt
112-Channel, 13.5 dB Tilt
112-Channel, 17 dB Tilt
79-Channel, 12 dB Tilt
79-Channel, 13.5 dB Tilt
79-Channel, 17 dB Tilt
XMD132
XMD112
XMD79
XMD112
XMD112
XMD112
XMD79
XMD79
XMD79
—
—
—
—
—
—
—
—
—
-55
-57
-60
-51
-53
-56
-58
-60
-65
-53
-55
-58
—
—
—
—
—
—
Composite Triple Beat
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
132-Channel FLAT
112-Channel FLAT
79-Channel FLAT
112-Channel, 12 dB Tilt
112-Channel, 13.5 dB Tilt
112-Channel, 17 dB Tilt
79-Channel, 12 dB Tilt
79-Channel, 13.5 dB Tilt
79-Channel, 17 dB Tilt
CTB132
CTB112
CTB79
CTB112
CTB112
CTB112
CTB79
CTB79
CTB79
—
—
—
—
—
—
—
—
—
-56
-60
–66
-58
-59
-62
-64
-69
-72
-54
-58
–64
—
—
—
—
—
—
NF
—
—
—
—
4.0
4.0
4.0
4.0
4.5
4.5
4.5
4.5
dB
IDC
410
425
440
mA
Noise Figure
DC Current (VDC = 24 V, TC = 45°C)
dBc
dBc
dBc
50 MHz
550 MHz
750 MHz
870 MHz
MMG2001T1
2
RF Device Data
Freescale Semiconductor
C7
R9
Pin 15
C5
R11
Pin 3
Pin 4
T2
C3
Pin 13 R15
Pin 5
T1
RF
INPUT
C10
R13
Pin 6
R12 C6
C1
R17
C9
D2
R16
RF
OUTPUT
T3
C11
VCC
Pin 7
D3
C4
Pin 11
R10
C8
R14
R1
R18
R2
R3
D1
R4
R7
R6
Q2
Q1
C2
R5
R8
Figure 3. MMG2001T1 50 -870 MHz Test Circuit Schematic
Table 6. MMG2001T1 50 -870 MHz Test Circuit Component Designations and Values
Designation
Description
C1, C7, C8, C11
220 pF Chip Capacitors (0603)
C2, C3, C4, C9, C10
0.01 mF Chip Capacitors (0603)
C5, C6
1.8 pF Chip Capacitors (0603)
D1
5.1 V Zener Diode, On/MM3Z5V1T1
D2
27 V Zener Diode, On/MM3Z27VT1
D3
Transient Voltage Suppressor, On/1.5k27A/1.5SMC27AT3
Q1, Q2
Dual Transistors Package, On/MBT3904DW1T1
R1
2.2 kW, 1/4 W Chip Resistor (1206)
R2
680 W Chip Resistor (0603)
R3
180 W Chip Resistor (0603)
R4
1600 W Chip Resistor (0603)
R5
820 W Chip Resistor (0603)
R6
120 W Chip Resistor (0603)
R7
1.5 kW Chip Resistor (0603)
R8
8 W, 1 W Chip Resistor (2512)
R9, R10, R15
470 W Chip Resistors (0603)
R11, R12
18 W Chip Resistors (0603)
R13, R14
680 W Chip Resistors (0603)
R16
2.4 kW Chip Resistor (0603)
R17
6.2 kW Chip Resistor (0603)
R18
0 W Chip Resistor (0603)
T1
Input Transformer, 77PC016E080
T2
Output Transformer, 77PC016E071
T3
Output Transformer, 77PC016E072
PCB
FR4, 62 mil, εr = 4.81
MMG2001T1
RF Device Data
Freescale Semiconductor
3
MMG2001R2
Rev 0
R5
R16
R7
R18
C7
R9
Q1
R15
C3
R11
Q2
R13
B
C
R6
C5
T1
T2
C9
T3
C6
R8
C2
R10
C1
R12 C4
C8
D2
R14
C11
R17
C10
R2
R3
R4
R1
D1
D3
GND
Not
Active
+24 V
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with
the Freescale Semiconductor signature/logo. PCBs may have either Motorola or
Freescale markings during the transition period. These changes will have no
impact on form, fit or function of the current product.
Figure 4. MMG2001T1 50 -870 MHz Test Circuit Component Layout
MMG2001T1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
CTB, COMPOSITE TRIPLE BEAT (dBc)
−60
60 dBmV
−65
58 dBmV
−70
56 dBmV
−75
52 dBmV
50 dBmV
54 dBmV
−80
48 dBmV
79 Channels, 13.5 dB Tilt @ 870 MHz
−85
0
200
400
600
f, FREQUENCY (MHz)
CSO, COMPOSITE SECOND ORDER (dBc)
Figure 5. Composite Triple Beat versus
Frequency
−70
60 dBmV
58 dBmV
−75
56 dBmV
−80
48 dBmV
52 dBmV
50 dBmV
−85
54 dBmV
79 Channels, 13.5 dB Tilt @ 870 MHz
−90
0
200
400
600
f, FREQUENCY (MHz)
XMD, CROSS MODULATION DISTORTION (dBc)
Figure 6. Composite Second Order versus
Frequency
−55
79 Channels, 13.5 dB Tilt @ 870 MHz
−60
60 dBmV
−65
58 dBmV
−70
56 dBmV
54 dBmV
−75
52 dBmV
−80
50 dBmV
−85
48 dBmV
−90
0
200
400
600
f, FREQUENCY (MHz)
Figure 7. Cross Modulation Distortion versus
Frequency
MMG2001T1
RF Device Data
Freescale Semiconductor
5
NOTES
MMG2001T1
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _
A
E2
1
14 x e
16
D1
e/2
D
8
9
E1
8X
bbb
M
B
BOTTOM VIEW
E
C B
S
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
b1
Y
c
A A2
b
DATUM
PLANE
SEATING
PLANE
H
aaa
M
ccc C
q
W
GAUGE
PLANE
W
L
C A
SECT W-W
L1
C
c1
A1
1.000
0.039
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
−−−
0.600
0_
7_
0.200
0.200
0.100
DETAIL Y
CASE 978-03
ISSUE C
PFP -16
MMG2001T1
RF Device Data
Freescale Semiconductor
7
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MMG2001T1
Document Number: MMG2001
8Rev. 3, 7/2005
RF Device Data
Freescale Semiconductor