Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 32 volt analog or digital television transmitter equipment. • Typical Narrowband Two-T one Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain — 20.4 dB Drain Efficiency — 44.8% IMD — -28.8 dBc • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Designed for Push-Pull Operation Only • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRFE6P3300HR3 860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375G-04, STYLE 1 NI-860C3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +66 Vdc Gate-Source Voltage VGS -0.5, +12 Vdc Storage Temperature Range Tstg -65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 300 W CW Case Temperature 82°C, 220 W CW Case Temperature 79°C, 100 W CW Case Temperature 81°C, 60 W CW °C/W RθJC 0.23 0.24 0.27 0.27 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007-2009. All rights reserved. RF Device Data Freescale Semiconductor MRFE6P3300HR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 3B (Minimum) Machine Model (per EIA/JESD22-A115) C (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (4) (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (4) (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 350 μAdc) VGS(th) 1 2.2 3 Vdc Gate Quiescent Voltage (3) (VDD = 32 Vdc, ID = 1600 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) — 0.22 0.3 Vdc Reverse Transfer Capacitance (4) (VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.22 — pF Output Capacitance (4) (VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 217 — pF Input Capacitance (1) (VDS = 32 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 1060 — pF Off Characteristics (1) On Characteristics (1) Dynamic Characteristics (1,2) Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP, f1 = 857 MHz, f2 = 863 MHz Power Gain Gps 19 20.4 23 dB ηD 41 44.8 — % Intermodulation Distortion IMD — -28.8 -27 dBc Input Return Loss IRL — -18.4 -9 dB Drain Efficiency 1. 2. 3. 4. Each side of the device measured separately. Part internally matched both on input and output. Measurement made with device in push-pull configuration. Drains are tied together internally as this is a total device value. MRFE6P3300HR3 2 RF Device Data Freescale Semiconductor R1 VBIAS + B1 C23 + R3 C1 C2 C3 Z19 Z8 Z4 Z2 RF INPUT C16 C15 Z12 C17 C18 Z10 COAX1 VSUPPLY + COAX3 Z14 Z16 C14 Z6 RF Z18 OUTPUT C4 Z1 Z3 C6 Z7 DUT C5 C10 C11 Z9 R2 Z5 B2 Z20 Z13 C12 Z15 Z17 C13 COAX2 VBIAS Z11 COAX4 + C9 C7 + C8 C24 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 0.401″ x 0.081″ Microstrip 0.563″ x 0.101″ Microstrip 1.186″ x 0.058″ Microstrip 0.416″ x 0.727″ Microstrip 0.191″ x 0.507″ Microstrip 1.306″ x 0.150″ Microstrip Z12, Z13 Z14, Z15 Z16, Z17 Z18 Z19, Z20 PCB C19 VSUPPLY + C20 C21 C22 0.225″ x 0.507″ Microstrip 0.440″ x 0.435″ Microstrip 0.123″ x 0.215″ Microstrip 0.401″ x 0.081″ Microstrip 0.339″ x 0.165″ Microstrip Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.5 Figure 1. 820-900 MHz Narrowband Test Circuit Schematic Table 5. 820-900 MHz Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair-Rite C1, C9 1.0 μF, 50 V Tantulum Chip Capacitors T491C105K050AT Kemet C2, C7, C17, C21 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet C3, C8, C16, C20 1000 pF Chip Capacitors ATC100B102JT50XT ATC C4, C5, C13, C14 100 pF Chip Capacitors ATC100B101JT500XT ATC C6, C12 8.2 pF Chip Capacitors ATC100B8R2JT500XT ATC C10 9.1 pF Chip Capacitor ATC100B9R1BT500XT ATC C11 1.8 pF Chip Capacitor ATC100B1R8BT500XT ATC C15, C19 47 μF, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Nippon C18, C22 470 μF, 63 V Electrolytic Capacitors ESME630ELL471MK25S United Chemi-Con C23, C24 22 pF Chip Capacitors ATC100B220FT500XT ATC Coax1, 2, 3, 4 50 Ω, Semi Rigid Coax, 2.06″ Long UT-141A-TP Micro-Coax R1, R2 10 Ω, 1/4 W Chip Resistors CRCW120610R0FKEA Vishay R3 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay MRFE6P3300HR3 RF Device Data Freescale Semiconductor 3 C15 C1 C18 C23 VGG VDD B1 C2 C3 R3 R1 C16 COAX3 MRF6P9220, Rev. 2 COAX1 C4 C6 CUT OUT AREA C5 C14 C10 C11 C12 C13 COAX2 COAX4 R2 VGG C7 C8 C17 C20 B2 C21 VDD C24 C22 C9 C19 Figure 2. 820-900 MHz Narrowband Test Circuit Component Layout MRFE6P3300HR3 4 RF Device Data Freescale Semiconductor TYPICAL NARROWBAND CHARACTERISTICS 27 Gps, POWER GAIN (dB) 20 Gps 25 19.5 VDD = 32 Vdc, Pout = 60 W (Avg.) IDQ = 1600 mA, 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 19 18.5 0 -50 -5 -55 18 17.5 -45 ACP-L 17 820 -60 ACP-U 830 840 -10 -15 IRL 850 860 870 880 890 -65 900 -20 IRL, INPUT RETURN LOSS (dB) 29 20.5 ηD, DRAIN EFFICIENCY (%) 31 ηD ACPR (dBc) 21 f, FREQUENCY (MHz) Figure 3. Single-Carrier OFDM Broadband Performance @ 60 Watts Avg. 42 ηD Gps, POWER GAIN (dB) 19.5 40 19 Gps 38 VDD = 32 Vdc, Pout = 120 W (Avg.) IDQ = 1600 mA, 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 18.5 18 ACP-U 17.5 17 0 -45 -5 -50 ACP-L IRL -40 -55 16.5 820 830 840 850 860 870 880 890 -10 -15 -20 -60 900 IRL, INPUT RETURN LOSS (dB) 20 ηD, DRAIN EFFICIENCY (%) 44 ACPR (dBc) 20.5 f, FREQUENCY (MHz) Figure 4. Single-Carrier OFDM Broadband Performance @ 120 Watts Avg. 21 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -1 0 IDQ = 2400 mA Gps, POWER GAIN (dB) 20 2000 mA 1600 mA 19 1200 mA 18 800 mA 17 VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing -2 0 -3 0 IDQ = 800 mA -4 0 1200 mA 2400 mA 2000 mA -5 0 1600 mA -6 0 16 1 10 100 600 1 10 100 600 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two-T one Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRFE6P3300HR3 RF Device Data Freescale Semiconductor 5 TYPICAL NARROWBAND CHARACTERISTICS -1 0 VDD = 32 Vdc, IDQ = 1600 mA f1 = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing -2 0 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -1 0 -3 0 -4 0 5th Order -5 0 3rd Order -6 0 7th Order -70 100 10 1 600 VDD = 32 Vdc, Pout = 150 W (PEP), IDQ = 1600 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 860 MHz -2 0 IM3-L -3 0 IM3-U IM5-U -4 0 IM5-L -5 0 IM7-U IM7-L -6 0 -70 1 10 Pout, OUTPUT POWER (WATTS) PEP TWO-T ONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 80 63 Pout, OUTPUT POWER (dBm) Ideal P6dB = 56.28 dBm (424.38 W) 62 61 P3dB = 55.9 dBm (388.37 W) 60 59 58 P1dB = 55.15 dBm (327.9 W) 57 Actual 56 55 VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 860 MHz 54 53 32 33 34 35 36 37 38 39 40 41 42 Pin, INPUT POWER (dBm) 45 40 35 -30 25_C 85_C 25_C ηD 30 25 TC = -30_C -25 -30 _C VDD = 32 Vdc, IDQ = 1600 mA, f = 860 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols 85_C 25_C 20 ACP-U 15 -40 -45 Gps -30 _C 85_C -35 -50 -55 -60 10 ACP-L 5 -65 -70 0 1 10 100 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power 200 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single-Carrier DVBT OFDM ACPR, Power Gain and Drain Efficiency versus Output Power MRFE6P3300HR3 6 RF Device Data Freescale Semiconductor TYPICAL NARROWBAND CHARACTERISTICS 22 Gps 60 25_C 19 50 85_C 40 85_C 18 30 17 20 ηD VDD = 32 Vdc IDQ = 1600 mA f = 860 MHz 16 10 19 18 17 IDQ = 1600 mA f = 860 MHz 10 15 1 20 Gps, POWER GAIN (dB) 25_C 20 21 ηD, DRAIN EFFICIENCY (%) TC = -30 _C 21 Gps, POWER GAIN (dB) 70 -30 _C 32 V 30 V 16 0 800 100 VDD = 28 V 0 50 100 150 200 250 300 350 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 400 MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 32 Vdc, Pout = 270 W PEP, and ηD = 44.8%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRFE6P3300HR3 RF Device Data Freescale Semiconductor 7 DIGITAL TEST SIGNALS 100 -2 0 7.61 MHz -3 0 10 -5 0 -6 0 0.1 (dB) PROBABILITY (%) -4 0 1 8K Mode DVTB OFDM 64 QAM Data Carrier Modulation 5 Symbols 0.01 ACPR Measured at 3.9 MHz Offset from Center Frequency -7 0 -8 0 -9 0 0.001 20 kHz BW -1 00 20 kHz BW -110 0.0001 0 2 4 6 8 10 12 -5 -4 -3 -2 -1 0 1 2 3 4 PEAK-T O-A VERAGE (dB) f, FREQUENCY (MHz) Figure 14. Single-Carrier DVTB OFDM Figure 15. 8K Mode DVBT OFDM Spectrum 5 MRFE6P3300HR3 8 RF Device Data Freescale Semiconductor f = 890 MHz Zload f = 830 MHz Zo = 10 Ω f = 890 MHz f = 830 MHz Zsource VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP f MHz Zsource Ω Zload Ω 830 4.52 - j6.73 4.89 - j1.35 845 4.22 - j6.38 5.06 - j1.01 860 3.89 - j5.81 5.18 - j0.58 875 3.54 - j5.10 5.27 - j0.11 890 3.39 - j4.32 5.36 + j0.43 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Z source Output Matching Network + Z load Figure 16. 820-900 MHz Narrowband Series Equivalent Source and Load Impedance MRFE6P3300HR3 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS 4 G ccc R M T A M B M Q bbb 2X L T A M M B M J (LID) 2 1 B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. (FLANGE) 5 4X S M T A 3 4 B (INSULATOR) bbb K 4X M B M D bbb M ccc T A M M B T A M M B M F N (LID) E M H C (INSULATOR) bbb A M T A M B T M SEATING PLANE DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF STYLE 1: PIN 1. 2. 3. 4. 5. A MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF DRAIN DRAIN GATE GATE SOURCE CASE 375G-04 ISSUE G NI-860C3 MRFE6P3300HR3 10 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2007 • Initial Release of Data Sheet 1 Dec. 2008 • Table 4, Dynamic Characteristics, corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, corrected Typ value from 106 to 1060 pF, p. 2 • Fig. 1, Test Circuit Schematic, Z-list, changed Z4, Z5 from 1.013″ x 0.058″ Microstrip to 1.186″ x 0.058″ Microstrip; Z10, Z11 from 1.054″ x 0.150″ Microstrip to 1.306″ x 0.150″ Microstrip; and Z19, Z20 from 0.165″ x 0.339″ Microstrip to 0.339″ x 0.165″ Microstrip; also separated Z1 and Z18 into two lines in Z-list, p. 3 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 2 Dec. 2009 • Data sheet revised to reflect part status change, removing MRFE6P3300HR5. Refer to PCN13420. (See Rev. 1 data sheet for MRFE6P3300HR5.) MRFE6P3300HR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007-2009. All rights reserved. MRFE6P3300HR3 Document Number: MRFE6P3300H Rev. 2, 12/2009 12 RF Device Data Freescale Semiconductor