Freescale Semiconductor Technical Data Document Number: MW7IC2425N Rev. 0, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 28 Volts, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 Watts CW, f = 2450 MHz Power Gain — 27.7 dB Power Added Efficiency — 43.8% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW Output Power Features • Qualified Up to a Maximum of 28 VDD Operation • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • Excellent Thermal Stability • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 2450 MHz, 25 W CW, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2425NR1 CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2425GNR1 CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2425NBR1 VDS1 RFin RFout/VDS2 VGS1 Quiescent Current Temperature Compensation (1) VGS2 VDS1 GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/VDS2 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C Case Operating Temperature Operating Junction Temperature (1,2) Input Power TJ 225 °C Pin 20 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture) Characteristic Thermal Resistance, Junction to Case (Case Temperature 80°C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 55 mA Stage 2, 28 Vdc, IDQ2 = 195 mA RθJC °C/W 6.1 1.2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 μAdc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 55 mA) (4) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 55 mAdc) (4,5) VGG(Q) 10.3 11.2 12.6 Vdc Stage 1 - Off Characteristics Stage 1 - On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Measured in Freescale Narrowband Test Fixture. 5. See Appendix A for functional test measurements and test fixture. (continued) MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 80 μAdc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 195 mAdc) (1) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 195 mAdc) (1,2) VGG(Q) 9.5 10.5 11.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 800 mAdc) VDS(on) 0.15 0.47 0.8 Vdc Coss — 111 — pF Stage 2 - Off Characteristics Stage 2 - On Characteristics Stage 2 - Dynamic Characteristics (3) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture,(2) 50 ohm system) VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz Power Gain Gps 25.5 27.7 30.5 dB Power Added Efficiency PAE 41.5 43.8 — % Input Return Loss IRL — - 18 - 10 dB (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Gps 25.5 28.5 30.5 dB Power Added Efficiency PAE 15 17 — % Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. PAR — 9 — dB ACPR — - 50 - 46 dBc IRL — - 15 - 10 dB Measured in Freescale Narrowband Test Fixture. See Appendix A for functional test fixture documentation. Part internally matched both on input and output. Measurement made with device in straight lead configuration before any lead forming operation is applied. MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 3 VDD1 VD2 B1 28 V C17 C16 C9 C15 C8 C14 C7 RF INPUT 1 2 3 4 5 Z1 Z2 Z3 NC DUT C13 NC 16 C12 NC 15 NC NC NC Z13 Z4 14 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z14 RF OUTPUT 6 C11 7 NC 8 9 C4 C5 C6 C1 10 11 NC C10 Quiescent Current Temperature Compensation NC 13 NC 12 VG1 R4 R5 C2 R6 C3 VG2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500″ 0.075″ 1.640″ 0.100″ 0.151″ 0.025″ 0.100″ 0.306″ x 0.027″ x 0.127″ x 0.027″ x 0.042″ x 0.268″ x 0.268″ x 0.056″ x 0.056″ Microstrip Microstrip Microstrip Microstrip Microstrip x 0.056″ Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040″ x 0.061″ Microstrip 0.020″ x 0.050″ Microstrip 0.050″ x 0.050″ Microstrip 0.050″ x 0.027″ Microstrip 0.338″ x 0.020″ Microstrip 1.551″ x 0.027″ Microstrip Rogers R04350B, 0.0133″, εr = 3.48 * Line length includes microstrip bends Figure 3. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Schematic Table 6. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 47 Ω, 100 MHz Short Ferrite Bead 2743019447 Fair - Rite C1, C4, C7, C12, C15 6.8 pF Chip Capacitors ATC600S6R8CT250XT ATC C2, C5, C8, C13 10 nF Chip Capacitors C0603C103J5RAC Kemet C3, C6, C9, C14 1 μF, 50 V Chip Capacitors GRM32RR71H105KA01B Murata C10 2.4 pF Chip Capacitor ATC600S2R4BT250XT ATC C11 3.3 pF Chip Capacitor ATC600S3R3BT250XT ATC C16, C17 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata R1, R4 12 KΩ, 1/4 W Chip Resistors CRCW12061202FKEA Vishay R2, R3, R5, R6 1 KΩ, 1/4 W Chip Resistors CRCW12061001FKEA Vishay MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 4 RF Device Data Freescale Semiconductor MW7IC2425N Rev. 1 C9 C8 C7 C4 R4 R5 C5 R6 C1 C2 VG1 C16 C15 C14 C13 CUT OUT AREA C17 B1 C12 C10 C11 C6 R1 R2 R3 VG2 C3 Figure 4. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Layout MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — NARROWBAND 50 40 28 30 27 20 VDD = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 10 25 1 47 P1dB = 44.5 dBm (28.05 W) 46 45 Actual 44 43 VDD = 28 Vdc, IDQ1 = 55 mA IDQ2 = 195 mA, f = 2450 MHz 42 0 100 10 P3dB = 44.9 dBm (30.9 W) 41 13 14 15 17 18 19 20 Figure 6. CW Output Power versus Input Power Figure 5. Power Gain and Power Added Efficiency versus CW Output Power Gps, POWER GAIN (dB) 16 Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW 30 50 29 40 VD1 = 32 V 28 30 30 V 20 27 28 V VD2 = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 26 25 0.1 1 10 PAE, POWER ADDED EFFICIENCY (%) 26 Ideal 48 Pout, OUTPUT POWER (dBm) 29 49 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 30 0 100 10 Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD1 50 28 V 29 30 V 40 32 V 28 30 VD2 = 28 V 30 V 27 20 32 V VD1 = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 26 25 0.1 1 10 10 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 30 0 100 Pout, OUTPUT POWER (WATTS) CW Figure 8. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD2 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 6 RF Device Data Freescale Semiconductor Gps, POWER GAIN (dB) 30 50 IDQ1 varied from 45 mA to 65 mA 40 in 5 mA steps 29 IDQ1 = 65 mA 28 30 60 mA 55 mA 27 20 45 mA 50 mA VDD = 28 Vdc 10 IDQ2 = 195 mA f = 2450 MHz 0 100 26 25 1 10 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS — NARROWBAND Pout, OUTPUT POWER (WATTS) CW Figure 9. Power Gain and Power Added Efficiency versus CW Output Power as a Function of IDQ1 50 28 215 mA 195 mA IDQ2 = 235 mA 40 175 mA 27 155 mA 30 IDQ2 varied from 155 mA to 235 mA in 20 mA steps 26 20 VDD = 28 Vdc IDQ1 = 55 mA f = 2450 MHz 25 1 10 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 29 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Power Added Efficiency versus CW Output Power as a Function of IDQ2 109 MTTF (HOURS) 108 1st Stage 107 2nd Stage 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 25 W CW, and PAE = 43.8%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 7 Zo = 50 Ω Zload Zsource f = 2450 MHz f = 2450 MHz VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW f MHz Zsource W Zload W 2450 32 - j6.256 6.2 - j1.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance — Narrowband MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 9 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 10 RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 11 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 12 RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 13 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 14 RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 15 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 16 RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 17 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Mar. 2009 Description • Initial Release of Data Sheet MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 18 RF Device Data Freescale Semiconductor APPENDIX A MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA MW7IC2725N Rev. 1.3 C16 C17 C15 C9 C8 C7 R5 C1 R6 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500″ 0.075″ 1.640″ 0.100″ 0.151″ 0.025″ 0.050″ 0.356″ VG1 C12 C2 C6 C3 CUT OUT AREA R4 C14 C13 C4 C5 B1 C10 C11 VG2 x 0.027″ x 0.127″ x 0.027″ x 0.042″ x 0.268″ x 0.268″ x 0.056″ x 0.056″ Microstrip Microstrip Microstrip Microstrip Microstrip x 0.056″ Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040″ x 0.061″ Microstrip 0.020″ x 0.050″ Microstrip 0.050″ x 0.050″ Microstrip 0.050″ x 0.027″ Microstrip 0.338″ x 0.020″ Microstrip 1.551″ x 0.027″ Microstrip Rogers R04350B, 0.0133″, εr = 3.48 * Line length includes microstrip bends Figure 1. MW7IC2425NR1(GNR1)(NBR1) Test Circuit Component Layout Table 1. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Gps 25.5 28.5 30.5 dB Power Added Efficiency PAE 15 17 — % Output Peak - to - Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB ACPR — - 50 - 46 dBc IRL — - 15 - 10 Adjacent Channel Power Ratio Input Return Loss dB (continued) MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 19 APPENDIX A MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued) Table 1. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 77 mA) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test) VGG(Q) 12.5 15.8 19.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 275 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test) VGG(Q) 11 14 18 Vdc Stage 1 - On Characteristics Stage 2 - On Characteristics Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case (Case Temperature 81°C, Pout = 25 W CW) Symbol Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA RθJC Value 5.5 1.3 Unit °C/W MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 20 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 Document Number: RF Device Data MW7IC2425N Rev. 0, 3/2009 Freescale Semiconductor 21