Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 3, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2300NR1 MRF6V2300NBR1 Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz Power Gain — 25.5 dB Drain Efficiency — 68% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 10 - 600 MHz, 300 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2300NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2300NBR1 PARTS ARE SINGLE - ENDED RFin/VGS RFout/VDS RFin/VGS RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +110 Vdc Gate- Source Voltage VGS - 0.5, +10 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C © Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW Symbol Value (1,2) Unit RθJC 0.24 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 2.5 mA Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 μAdc V(BR)DSS 110 — — Vdc IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 μAdc) VGS(th) 1 1.63 3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.6 3.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.28 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.88 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 120 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 268 — pF Off Characteristics Drain- Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 220 MHz, CW Power Gain Gps 24 25.5 27 dB Drain Efficiency ηD 66 68 — % Input Return Loss IRL — - 16 -9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2300NR1 MRF6V2300NBR1 2 RF Device Data Freescale Semiconductor B3 VBIAS + + + C1 C2 C3 L2 C4 C5 C6 C8 Z1 C9 C10 C11 R2 Z2 Z3 Z4 C18 C19 C20 B2 R1 C7 C17 C14 L1 RF INPUT VSUPPLY + B1 R3 Z5 Z7 Z8 C15 C16 Z10 Z9 Z11 RF OUTPUT C23 Z6 C21 C22 C12 DUT C13 Z1 Z2 Z3 Z4 Z5 Z6, Z7 0.352″ x 0.082″ Microstrip 1.567″ x 0.082″ Microstrip 0.857″ x 0.082″ Microstrip 0.276″ x 0.220″ Microstrip 0.434″ x 0.220″ Microstrip 0.298″ x 0.630″ Microstrip Z8 Z9 Z10 Z11 PCB 0.085″ x 0.170″ Microstrip 2.275″ x 0.170″ Microstrip 0.945″ x 0.170″ Microstrip 0.443″ x 0.082″ Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 2. MRF6V2300NR1(NBR1) Test Circuit Schematic Table 6. MRF6V2300NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 95 Ω, 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair- Rite B3 47 Ω, 100 MHz Short Ferrite Bead, Surface Mount 2743019447 Fair- Rite C1 47 μF, 50 V Electrolytic Capacitor 476KXM063M Illinois Capacitor C2 22 μF, 35 V Tantalum Capacitor T494X226K035AT Kemet C3 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C4, C19 10 K pF Chip Capacitors ATC200B103KT50XT ATC C5, C18 20 K pF Chip Capacitors ATC200B203KT50XT ATC C6, C11, C17 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS AVX C7, C8, C15, C16 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C10 220 nF Chip Capacitor C1206C224Z5VAC Kemet C9, C12, C14, C23 1000 pF Chip Capacitors ATC100B102JT50XT ATC C13 82 pF Chip Capacitor ATC100B820JT500XT ATC C20 470 μF, 63 V Electrolytic Capacitor 477KXM063M Illinois Capacitor C21 24 pF Chip Capacitor ATC100B240JT500XT ATC C22 39 pF Chip Capacitor ATC100B390JT500XT ATC L1 4 Turn #18 AWG, 0.18” ID None None L2 82 nH Inductor 1812SMS- 82NJ Coilcraft R1 270 Ω, 1/4 W Chip Resistor CRCW12062700FKTA Vishay R2, R3 4.75 Ω, 1/4 W Chip Resistors CRCW12064R75FKTA Vishay MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 3 C2 C1 C3 + B1 B3 C4 C5 C6 C7 + C19 C18 C17 C20 R1 C10 B2 C15* C16* C8 C11 C14 C9 C12 L2 L1 R2 R3 CUT OUT AREA C13 C23 C22 C21 MRF6V2300N/NB Rev. 3 * Stacked Figure 3. MRF6V2300NR1(NBR1) Test Circuit Component Layout MRF6V2300NR1 MRF6V2300NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 100 ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Ciss Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 10 TC = 25°C 1 1 0 10 30 20 50 40 Figure 4. Capacitance versus Drain - Source Voltage Figure 5. DC Safe Operating Area 28 9 VGS = 3 V 7 6 2.75 V 5 2.63 V 4 2.5 V 3 IDQ = 1350 mA 27 8 Gps, POWER GAIN (dB) ID, DRAIN CURRENT (AMPS) 100 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 10 2 1125 mA 26 900 mA 25 650 mA 24 450 mA 23 1 VDD = 50 Vdc f1 = 220 MHz 2.25 V 22 10 0 0 20 40 60 80 100 120 100 600 DRAIN VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) CW Figure 6. DC Drain Current versus Drain Voltage Figure 7. CW Power Gain versus Output Power 60 −15 VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz −20 Two−Tone Measurements, 100 kHz Tone Spacing P3dB = 55.76 dBm (377 W) Pout, OUTPUT POWER (dBm) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 10 1 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) −25 IDQ = 450 mA −30 900 mA −35 650 mA −40 1125 mA −45 58 P1dB = 55.04 dBm (319 W) 56 Actual 54 52 VDD = 50 Vdc, IDQ = 900 mA f = 220 MHz −50 1350 mA −55 1 10 100 600 Ideal 50 24 26 28 30 32 34 Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm) Figure 8. Third Order Intermodulation Distortion versus Output Power Figure 9. CW Output Power versus Input Power MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 60 28 TC = −30_C Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) 26 24 50 V 22 45 V 40 V 20 35 V 30 V 18 25 V IDQ = 900 mA f = 220 MHz 16 VDD = 20 V 50 100 150 200 250 300 400 350 25_C 85_C 50 45 VDD = 50 Vdc IDQ = 900 mA f = 220 MHz 40 35 10 14 0 55 15 20 25 30 Pout, OUTPUT POWER (WATTS) CW Pin, INPUT POWER (dBm) Figure 10. Power Gain versus Output Power Figure 11. Power Output versus Power Input 29 35 80 25_C 70 85_C −30_C Gps 27 60 TC = −30_C 26 50 25_C 25 40 85_C 30 24 ηD 23 VDD = 50 Vdc IDQ = 900 mA f = 220 MHz 22 5 20 10 600 100 10 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 28 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power 65 60 23 55 Gps 22 50 ηD 21 45 20 40 19 18 35 IMD3 30 17 25 VDD = 50 V, Pout = 300 W (Peak) IDQ = 1100 mA, Tone−Spacing = 100 kHz 16 15 160 170 180 190 200 210 220 230 −28 −29 −30 −31 20 −32 15 240 −33 IMD3 (dBc) 24 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 25 f, FREQUENCY (MHz) Figure 13. VHF Broadcast Broadband Performance MRF6V2300NR1 MRF6V2300NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 300 W CW, and ηD = 68%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 14. MTTF versus Junction Temperature MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 7 Zsource f = 220 MHz Zo = 5 Ω Zload f = 220 MHz VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW f MHz Zsource W Zload W 220 1.23 + j3.69 2.43 + j2.04 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6V2300NR1 MRF6V2300NBR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 9 MRF6V2300NR1 MRF6V2300NBR1 10 RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 11 MRF6V2300NR1 MRF6V2300NBR1 12 RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 13 MRF6V2300NR1 MRF6V2300NBR1 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2007 • Initial Release of Data Sheet 1 Feb. 2007 • Added Fig. 1, Pin Connections, p. 1 • Removed footnote references listed for Operating Junction Temperature, Table 1, Maximum Ratings, p. 1 • Added Max value to Power Gain, Table 5, Functional Tests, p. 2 2 May 2007 • Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4, C19, C5, C18, C9, C12, C14, and C23, p. 3 3 Jan. 2008 • Increased operating frequency to 600 MHz, p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 • Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3 • Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 9 - 11. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 12 - 14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007 - 2008. All rights reserved. MRF6V2300NR1 MRF6V2300NBR1 Document Number: MRF6V2300N Rev. 3, 1/2008 16 RF Device Data Freescale Semiconductor