MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E3436A is a GaAs RF amplifier designed for WiMAX CPE. 36E 3436A 2527 (Lot No.) FEATURES • • • • • • • • • • InGaP HBT Device 6V Operation 30dB Linear Gain 2.5% EVM at an Output power of 25dBm 4% EVM at an Output power of 27dBm Integrated Output Power Detector Integrated 1-bit 21dB Step Attenuator 50Ω Matched Input/Output Ports Surface Mount Package RoHS Compliant Package 4.5 10 9 8 7 6 1 2 3 4 5 APPLICATIONS IEEE802.16-2004, IEEE802.16e-2005 (X-ray Top View) 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont DIM IN mm FUNCTIONAL BLOCK DIAGRAM Vc1 Vc2 Vc3 1000pF 1000pF 1000pF Pin Pout Vcont (0/3V) Po_det Bias Circuit Vcb 33kohms 15kohm 1000pF Vref Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. (1/8) July-2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Symbol Vc1, Vc2 Vc3, Vcb Vref Parameter Vcont Conditions* Value Unit Collector Supply Voltage Pout≤27.0dBm 8 V Reference Voltage Pout≤27.0dBm 3 V ATT Control Voltage Pout≤27.0dBm 3.3 V 180 mA 250 mA 900 mA Ic1 Ic2 Operation Current Pout≤27.0dBm Ic3 Pin Input Power Pout≤27.0dBm 5 dBm - Duty Cycle Pout≤27.0dBm 50 % Operation Temperature Pout≤27.0dBm -40~+85 °C - -40~+125 °C Tc(op) Tstg Storage Temperature *NOTE : Zin=Zout=50Ω Each maximum rating is guaranteed independently. Please take care that MGFS36E3436A is operated under these conditions at the worst case on your terminal. ELECTRICAL CHARACTERISTICS (Tc=25°C, Vc=6V, Vref=2.85V, Duty Cycle < 50%, 64QAM OFDM Modulation) Symbol Parameter Test Conditions* Limits Min f Frequency Gp Gain ηt Efficiency Pout - Output Power Spectrum Mask Meets Typ 3.4 Unit Max 3.6 GHz 30 dB Pout=27dBm 11 % ETSI EN302-326, EqC-PET=O, EqC-EMO=4 28 ETSI EN302-326, EqC-PET=O, EqC-EMO=6 26 Pout=25dBm 2.5 Pout=27dBm 4 Pout=25dBm 1.7 Pout=27dBm 2.0 21 EVM EVM Vdet Power Detector Voltage ATT Control Gain Step Vcont=3V Ileak Leakage Current Vc=6V, Vref=0V dBm % V dB 10 μA *NOTE : Zin=Zout=50Ω ESD RATING - Class 1A (HBM) MOISTURE SENSITIVITY LEVEL THERMAL RESISTANCE : - Level 3 30°C/W MITSUBISHI ELECTRIC CORP. (2/8) July-2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. PERFORMANCE DATA Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50% WiMAX OFDM 64QAM signal input. Tc=25degC. Output Power vs. Input Power Efficiency vs. Output Power 30 20 18 14 Efficiency (%) Output Power (dBm) 16 25 20 12 10 8 6 15 4 3.4GHz 3.5GHz 3.6GHz 3.4GHz 3.5GHz 3.6GHz 2 10 0 -20 -15 -10 Input Power (dBm) -5 0 EVM vs. Output Power 10 15 20 Output Power (dBm) 25 30 Detector Voltage vs. Output Power 3.0 6.0 5.5 2.5 5.0 4.5 2.0 3.5 Vdet (V) EVM (%) 4.0 3.0 2.5 1.5 1.0 2.0 1.5 3.4GHz 3.5GHz 3.6GHz 0.5 1.0 3.4GHz 3.5GHz 3.6GHz 30 0.5 0.0 10 15 20 Output Power (dBm) 25 0.0 10 15 20 Output Power (dBm) 25 30 Attenuation Performance 40 Vcont=0V Vcont=3V S21 (dB) 30 20 10 0 3.0 3.2 3.4 3.6 3.8 4.0 Frequency (GHz) MITSUBISHI ELECTRIC CORP. (3/8) July-2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50% f=3.5GHz, WiMAX OFDM 64QAM signal input. Output Power vs. Input Power Efficiency vs. Output Power 30 20 18 14 Efficiency (%) Output Power (dBm) 16 25 20 10 8 6 -40degC 0degC 25degC 60degC 85degC 15 12 -40degC 0degC 25degC 60degC 85degC 4 2 10 0 -25 -20 -15 -10 Input Power (dBm) -5 0 EVM vs. Output Power 10 15 20 Output Power (dBm) 25 30 Detector Voltage vs. Output Power 3.0 6.0 5.5 2.5 5.0 4.5 2.0 3.5 Vdet (V) EVM (%) 4.0 3.0 2.5 1.5 1.0 2.0 -40degC 0degC 25degC 60degC 85degC 1.5 0.5 1.0 0.5 -40degC 0degC 25degC 30 60degC 85degC 0.0 10 15 20 25 Output Power (dBm) 0.0 10 15 20 25 30 Output Power (dBm) Attenuation Level 24 Attenuation Level (dB) 23 22 21 20 19 18 -40 -20 0 20 40 60 Case Temperature (degC) 80 100 MITSUBISHI ELECTRIC CORP. (4/8) July-2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50% WiMAX OFDM 64QAM signal input. Tc=25degC. Output Power vs. Distortion -10 -10 f=3.4GHz f=3.5GHz f=3.6GHz -15 -20 3.5MHz offset -20 -30 -35 -40 -45 -30 -35 -40 -45 -50 -50 -55 -55 14 16 18 20 22 24 26 10 12 14 16 18 20 22 24 26 28 30 28 30 Output Power (dBm) Output Power (dBm) -20 f=3.4GHz f=3.5GHz f=3.6GHz -25 -30 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 7.4MHz offset Distortion (dBc) -35 Distortion (dBc) 5MHz offset -25 Distortion (dBc) Distortion (dBc) -25 10 12 f=3.4GHz f=3.5GHz f=3.6GHz -15 -40 -45 -50 -55 -60 -65 -70 f=3.4GHz f=3.5GHz f=3.6GHz 14MHz offset 10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm) Output Power (dBm) Spectrum Emission Mask * RBW 30 kHz * VBW 300 Hz Ref 20 * Att 20 dBm Offset 0 dB * SWT 9.2 s Marker 3 [T1 ] -37.71 dBm 3.495000000 GHz Ref Marker 1 [T1 ] 30.6 dB Offset 20 * Att 20 dBm 0 dB * RBW 30 kHz * VBW 300 Hz * SWT 9.2 s 0.97 dBm A 3.501626603 GHz 10 Marker 2 [T1 ] 1 RM * VIEW TRG 3.505000000 GHz LVL 0 1 RM * VIEW 1 0 -10 -20 -20 2 3 EXT 3 2 -29.55 dBm TRG 3.505000000 GHz LVL -10 -30 EXT -30 3DB -40 A Marker 2 [T1 ] -38.45 dBm 1 -30.29 dBm 3.495000000 GHz Marker 1 [T1 ] 30.6 dB -1.29 dBm 3.501626603 GHz 10 Marker 3 [T1 ] 3DB -40 ETSI-F ETSI-G -50 -50 -60 -60 -70 -70 -80 -80 Center 3.5 GHz 3.5 MHz/ Span 35 MHz Center Pout(max.)=26dBm for EqC-EMO=6 Date: 20.DEC.2007 13:40:42 3.5 GHz 3.5 MHz/ Span 35 MHz Pout(max.)=28dBm for EqC-EMO=4 Date: 20.DEC.2007 13:39:42 MITSUBISHI ELECTRIC CORP. (5/8) July-2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50% f=3.5GHz, WiMAX OFDM 64QAM signal input. Output Power vs. Distortion -10 -15 3.5MHz offset -15 -20 -25 Distortion (dBc) Distortion (dBc) -20 -10 Ta=-30deg C. Ta=+25deg C. Ta=+60deg C -30 -35 -40 -45 -35 -40 -45 -55 -55 10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm) Output Power (dBm) -20 -20 Ta=-30deg C. Ta=+25deg C. Ta=+60deg C 7.4MHz offset -25 -30 Ta=-30deg C. Ta=+25deg C. Ta=+60deg C 14MHz offset -35 Distortion (dBc) -35 Distortion (dBc) -30 -50 -30 5MHz offset -25 -50 -25 Ta=-30deg C. Ta=+25deg C. Ta=+60deg C -40 -45 -50 -55 -40 -45 -50 -55 -60 -60 -65 -65 -70 -70 10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm) Output Power (dBm) MITSUBISHI ELECTRIC CORP. (6/8) July-2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. APPLICATION CIRCUIT RF Input Supply Voltage 5 0 oh m s Pin Vcont Vcb Vref Vc1 GND Vc2 Po_det Vc3 1uF 1000pF Attenuator Control 1000pF Reference Voltage 10nF 22nF Detector Voltage Out Pout 1000pF 5 0 oh m s RF Output Pulse Operation is controlled by Vref PACKAGE OUTLINE 4.5 1st pin mark 1.3 (max) 1.0 (typ) 4.5 0.3 4.1 3.6 1.8 0.3 Dimension in millimeters. Unless specified tolerance ±0.2mm. 3.65 2.65 0.5 0.5 MITSUBISHI ELECTRIC CORP. (7/8) July-2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. HANDLING PRECAUTION 1) Work desk, test equipment, soldering iron and worker should be grounded before mounting and testing. Please note that electric discharge of GaAs HBT is much more sensitive than that of Si transistor. Handling without ground possibly damages GaAs HBT. 2) The surface of a board on which this product is mounted should be as flat and clean as possible to prevent a substrate from cracking by bending this product. 3) IR reflow soldering condition is confirmed following profile. 260degC 225degC ≧10sec (PKG Surface temp.) ≧70sec 180+/-10degC 120+/-20sec 4) Handling precaution at high temperature This product has the structure of sealing with epoxy resin on grass epoxy substrate. This epoxy resin gets soft if the temperature exceeds glass transition temperature=120degC, and the thermic decomposition is occurred if the temperature exceeds 350degC. Therefore, in case of heating this product, please keep the same heat profile as recommended reflow one. Please note that crack, flaw or modification may be generated if softened epoxy resin part is handled with tweezers and etc at high temperature. 5) Cleaning condition Please select after confirming administrative guidance, legal restrictions, and the mass of the residual ion contaminant etc., and use it. 6) After soldering, please remove the flux. Please take care that solvent does not penetrate into this product. 7) GaAs HBT contains As(Arsenic). This product should be dumped as particular industrial waste. MITSUBISHI ELECTRIC CORP. (8/8) July-2008