MITSUBISHI MGFS39E2527A-01

MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
Outline Drawing
DESCRIPTION
6.0
6.0
30
29
28
27
26
25
24
23
22
21
39E2527A
(Lot. No)
JAPAN
11
12
13
14
15
16
17
18
19
20
InGaP HBT Device
6V Operation
30dBm Linear Output Power (64QAM, EVM=2.5%)
40dB Linear Gain
Integrated Output Power Detector
Integrated 1-bit Step Attenuator
Surface Mount Package
RoHS Compliant Package
1
2
3
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5
6
7
8
9
10
40
39
38
37
36
35
34
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32
31
FEATURES
•
•
•
•
•
•
•
•
0.9
40
39
38
37
36
35
34
33
32
31
MGFS39E2527A is a 4-stage amplifier designed
for WiMAX CPE.
30
29
28
27
26
25
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21
1
2
3
4
5
6
7
8
9
10
APPLICATION
DIM in mm
11
12
13
14
15
16
17
18
19
20
IEEE802.16-2004
Top view
FUNCTIONAL BLOCK DIAGRAM
Vc1
Vc2
Vc3,Vcb3,4
Vc4
Vcont
RF OUT
RF IN
External
Output
Matching
Circuits
Vdet
Vcb1
Vcb2
Bias Circuit
Vref1,2
Vref3,4
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vc1,Vc2,
Vc3,Vc4,
Vcb1,Vcb2
Vcb3,Vcb4
Vref
Conditions
Collector Supply Voltage
Value
Unit
8
V
-
Reference Voltage
-
3
V
ATT Control Voltage
-
3.3
V
Ic1
80
mA
Ic2
300
mA
300
mA
Vcont
Ic3
Operation current
-
2000
mA
Input Power
-
-3
dBm
Pout<=30dBm
Duty<=50%
-
160
deg.C
-40 to +85
deg.C
-40 to +125
deg.C
Ic4
Pin
Tj
Tc(op)
Tstg
Junction Temperature
Operation Temperature
Storage Temperature
NOTE :
Each maximum rating is guaranteed independently.
Please take care that MGFS39E2527A is operated under these conditions at the worst case on your terminal.
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Symbol
Parameter
Test Conditions
f
Frequency
Gp
Gain
Vc=6V, Vref=2.85V
Ict
Total current
Pout=30dBm
EVM
EVM
64QAM OFDM Modulation
RLin
Input Return Loss
Duty Cycle <= 50%
Vdet
Power Detector Voltage
ATT
Control Gain Step
NOTE : Zin=50 Ohm, Zout : Measured with application circuit
Min
2.500
Limits
Typ
42
1250
2.5
10
1.5
19
Unit
Max
2.700
GHz
dB
mA
%
dB
V
dB
ESD RATING : Class 2 (HBM)
MOISTURE SENSITIVITY LEVEL : LEVEL3
THERMAL RESISTANCE
: 4.0 deg.C/W
(The thermal resistance of the 4th stage is calculated as 5.5 deg.C/W )
MITSUBISHI ELECTRIC CORP.
(2/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
PERFORMANCE DATA
- Vc=6V Ta=25deg.C
(WiMAX OFDM 64QAM signal input)
Gain vs. Output Power
EVM vs. Output Power
50.0
6.0
48.0
5.0
46.0
4.0
42.0
2.5GHz
40.0
2.6GHz
38.0
2.7GHz
EVM (%)
Gain (dB)
44.0
2.5GHz
3.0
2.6GHz
2.7GHz
2.0
36.0
34.0
1.0
32.0
30.0
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
Collector Current vs. Output Power
Detector Voltage vs. Output Power
3.0
1900
2.5
1700
2.0
2.5GHz
1300
2.6GHz
2.7GHz
1100
Vdet (V)
Ict (mA)
1500
2.5GHz
2.6GHz
1.5
2.7GHz
1.0
900
0.5
700
500
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
0
-5
-10
2.5GHz
-15
2.6GHz
2.7GHz
-20
-25
-30
Spectrum [email protected] ofset(dBm)
Spectrum [email protected] ofset (dBm)
Spectrum Emission Mask
0
-5
-10
-15
2.5GHz
2.6GHz
-20
2.7GHz
-25
-30
-35
-40
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(3/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
Attenuator Performance
25
24
Attenuation ( dB )
23
22
21
20
19
18
17
16
15
2.45
2.55
2.65
2.75
Frequency ( GHz )
Noise figure
12.00
Vcont=0V
Vcont=3V
10.00
NF (dB)
8.00
6.00
4.00
2.00
0.00
2.00
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(4/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
- Vc=6V Ta=85deg.C
Gain vs. Output Power
EVM vs. Output Power
50.0
6.0
48.0
5.0
46.0
4.0
42.0
2.5GHz
40.0
2.6GHz
38.0
2.7GHz
EVM (%)
Gain (dB)
44.0
2.5GHz
3.0
2.6GHz
2.7GHz
2.0
36.0
34.0
1.0
32.0
30.0
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
Collector Current vs. Output Power
Detector Voltage vs. Output Power
3.0
1900
2.5
1700
2.0
2.5GHz
1300
2.6GHz
2.7GHz
1100
Vdet (V)
Ict (mA)
1500
2.5GHz
2.6GHz
1.5
2.7GHz
1.0
900
0.5
700
500
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
0
-5
-10
2.5GHz
-15
2.6GHz
2.7GHz
-20
-25
-30
Spectrum [email protected] ofset(dBm)
Spectrum [email protected] ofset (dBm)
Spectrum Emission Mask
0
-5
-10
-15
2.5GHz
2.6GHz
-20
2.7GHz
-25
-30
-35
-40
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(5/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
Attenuator Performance
25
24
Attenuation ( dB )
23
22
21
20
19
18
17
16
15
2.45
2.55
2.65
2.75
Frequency ( GHz )
Noise figure
12
10
NF (dB)
8
6
4
Vcont=0V
Vcont=3V
2
0
2.00
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(6/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
- Vc=6V Ta=-40deg.C
Gain vs. Output Power
EVM vs. Output Power
50.0
6.0
48.0
5.0
46.0
4.0
42.0
2.5GHz
40.0
2.6GHz
38.0
2.7GHz
EVM (%)
Gain (dB)
44.0
2.5GHz
3.0
2.6GHz
2.7GHz
2.0
36.0
34.0
1.0
32.0
30.0
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
Collector Current vs. Output Power
Detector Voltage vs. Output Power
3.0
1900
2.5
1700
2.0
2.5GHz
1300
2.6GHz
2.7GHz
1100
Vdet (V)
Ict (mA)
1500
2.5GHz
2.6GHz
1.5
2.7GHz
1.0
900
0.5
700
500
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
0
-5
-10
2.5GHz
-15
2.6GHz
2.7GHz
-20
-25
-30
Spectrum [email protected] ofset(dBm)
Spectrum [email protected] ofset (dBm)
Spectrum Emission Mask
0
-5
-10
-15
2.5GHz
2.6GHz
-20
2.7GHz
-25
-30
-35
-40
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(7/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
Attenuator Performance
25
24
Attenuation ( dB )
23
22
21
20
19
18
17
16
15
2.45
2.55
2.65
2.75
Frequency ( GHz )
Noise figure
12
Vcont=0V
Vcont=3V
10
NF (dB)
8
6
4
2
0
2.00
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(8/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
- Vc=5V Ta=25deg.C
Gain vs. Output Power
EVM vs. Output Power
50.0
6.0
48.0
5.0
46.0
4.0
42.0
2.5GHz
40.0
2.6GHz
38.0
2.7GHz
EVM (%)
Gain (dB)
44.0
2.5GHz
3.0
2.6GHz
2.7GHz
2.0
36.0
34.0
1.0
32.0
30.0
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
Collector Current vs. Output Power
Detector Voltage vs. Output Power
3.0
1900
2.5
1700
2.0
2.5GHz
1300
2.6GHz
2.7GHz
1100
Vdet (V)
Ict (mA)
1500
2.5GHz
2.6GHz
1.5
2.7GHz
1.0
900
0.5
700
500
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
0
-5
-10
2.5GHz
-15
2.6GHz
2.7GHz
-20
-25
-30
Spectrum [email protected] ofset(dBm)
Spectrum [email protected] ofset (dBm)
Spectrum Emission Mask
0
-5
-10
-15
2.5GHz
2.6GHz
-20
2.7GHz
-25
-30
-35
-40
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(9/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
Attenuator Performance
25
24
Attenuation ( dB )
23
22
21
20
19
18
17
16
15
2.45
2.55
2.65
2.75
Frequency ( GHz )
Noise figure
12.00
Vcont=0V
Vcont=3V
10.00
NF (dB)
8.00
6.00
4.00
2.00
0.00
2.00
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(10/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
- Vc=5V Ta=85deg.C
Gain vs. Output Power
EVM vs. Output Power
50.0
6.0
48.0
5.0
46.0
4.0
42.0
2.5GHz
40.0
2.6GHz
38.0
2.7GHz
EVM (%)
Gain (dB)
44.0
2.5GHz
3.0
2.6GHz
2.7GHz
2.0
36.0
34.0
1.0
32.0
30.0
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
Collector Current vs. Output Power
Detector Voltage vs. Output Power
3.0
1900
2.5
1700
2.0
2.5GHz
1300
2.6GHz
2.7GHz
1100
Vdet (V)
Ict (mA)
1500
2.5GHz
2.6GHz
1.5
2.7GHz
1.0
900
0.5
700
500
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
0
-5
-10
2.5GHz
-15
2.6GHz
2.7GHz
-20
-25
-30
Spectrum [email protected] ofset(dBm)
Spectrum [email protected] ofset (dBm)
Spectrum Emission Mask
0
-5
-10
-15
2.5GHz
2.6GHz
-20
2.7GHz
-25
-30
-35
-40
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(11/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
Attenuator Performance
25
24
Attenuation ( dB )
23
22
21
20
19
18
17
16
15
2.45
2.55
2.65
2.75
Frequency ( GHz )
Noise figure
12
10
NF (dB)
8
6
4
Vcont=0V
Vcont=3V
2
0
2.00
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(12/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
- Vc=5V Ta=-40deg.C
Gain vs. Output Power
EVM vs. Output Power
50.0
6.0
48.0
5.0
46.0
4.0
42.0
2.5GHz
40.0
2.6GHz
38.0
2.7GHz
EVM (%)
Gain (dB)
44.0
2.5GHz
3.0
2.6GHz
2.7GHz
2.0
36.0
34.0
1.0
32.0
30.0
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
Collector Current vs. Output Power
Detector Voltage vs. Output Power
3.0
1900
2.5
1700
2.0
2.5GHz
1300
2.6GHz
2.7GHz
1100
Vdet (V)
Ict (mA)
1500
2.5GHz
2.6GHz
1.5
2.7GHz
1.0
900
0.5
700
500
0.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
0
-5
-10
2.5GHz
-15
2.6GHz
2.7GHz
-20
-25
-30
Spectrum [email protected] ofset(dBm)
Spectrum [email protected] ofset (dBm)
Spectrum Emission Mask
0
-5
-10
-15
2.5GHz
2.6GHz
-20
2.7GHz
-25
-30
-35
-40
20.0 22.0 24.0 26.0 28.0 30.0 32.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0
Output Power(dBm)
Output Power(dBm)
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(13/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
Attenuator Performance
25
24
Attenuation ( dB )
23
22
21
20
19
18
17
16
15
2.45
2.55
2.65
2.75
Frequency ( GHz )
Noise figure
12
Vcont=0V
Vcont=3V
10
NF (dB)
8
6
4
2
0
2.00
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(14/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
31
32
33
34
35
36
37
38
1
30
2
29
3
28
4
27
5
26
GND
6
25
GND
RF OUT
RF OUT
RF OUT
20
RF OUT
RF OUT
RF OUT
RF OUT
RF OUT
GND
NC
NC
NC
NC
NC
NC
Vcb1
Vcb2
Vc2
Vc3,Vcb3,4
19
21
18
10
17
22
16
9
15
23
14
8
13
24
12
7
11
NC
NC
NC
NC
RF IN
RF IN
NC
NC
Vc1
NC
39
40
Vref1,2
NC
NC
Vcont
NC
NC
Vref3,4
Vdet
NC
NC
PACKAGE PIN ASSIGN
Top View
Mitsubishi Electric Corp. reserves the right to make changes to the product and its related material at any time
without notice.
Pin
1,2,3,4,7,8,10,
11,12,13,
18,19,20,
31,32,35,36,38,39
21,30
Function
NC
Description
These pins are not wired inside.
Both connecting to GND and open is acceptable.
It is recommended to connect as shown in the example metal land plan.
GND
5,6
9
14
15
16
17
RF IN
Vc1
Vcb1
Vcb2
Vc2
Vc3
22,23,24,25,
26,27,28,29
33
34
RF OUT
These pins are internally grounded inside the package and it is recommended
to ground them.
RF input terminals, internally DC-grounded. Do not apply DC voltage to them
This is the collector of the 1st stage.(5-6V)
This is the supply voltage for 1st stage base bias circuit. (5-6V)
This is the supply voltage for 2nd stage base bias circuit. (5-6V)
This is the collector of the 2nd stage. (5-6V)
This is the collector of the 3rd stage and the supply voltage for 3rd and 4th
stage base bias circuit. (5-6V)
These are the RF output pins. These are the collector of the 4th stage.
37
40
Vcon
Vref1,2
Vdet
Vref3,4
This is the output port of the detector sampled at the input of the 4th stage.
This is the reference voltage and power up/down control pin for the 3rd and
the 4th stage. The voltage can be applied together with pin 40. DC duty cycle
is controlled with pin 34 and 40.(2.85V/0V)
This is the control voltage for attenuator. (3V/0V)
This is the reference voltage and power up/down control pin for the 1st and
2nd stage. The voltage can be applied together with pin 34. DC duty cycle is
controlled with pin 34 and 40. (2.85V/0V)
MITSUBISHI ELECTRIC CORP.
(15/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
EXAMPLE LAYOUT OF EVALUATION BOARD (40mmX 40mm, t=0.2mm(RF), Er=4.2,FR-4)
Specifications are subject to change without notice.
Vref(2.85V)
Vcont(0/3V)
Vdet
Vc(6V)
ITEM
Q1
C1, C2, C3, C11, C12,
C13, C14, C15, C18
C4
C5, C6
C7
C8
C9
C19, C22, C23, C24
C20, C21
R1
DESCRIPTION
MGFS39E2527A
1 nF, 1005
NOTE
6mmX6mm, QFN
Murata, GRM155B11H102K
10 nF, 1005
2.2 pF, 1005
3.4 pF, 1005
3.6 pF, 1005
0.8 pF, 1005
47 uF, 3216
1 uF, 1608
33K, 0603
Murata, GRM155B11E103K
Murata, GJM1553C1H2R2B
Murata, GJM1553C1H3R4B
Murata, GJM1553C1H3R6B
Murata, GJM1554C1HR80B
Murata, GRM32EB31C476K
Murata, GRM188B31E105K
Taiyosha, RPCO3T333J
MITSUBISHI ELECTRIC CORP.
(16/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
APPLICATION CIRCUIT IN EVALUATION BOARD
Vref1_2
Vcon
Vref3_4
Vdet
C4
10nF
NC
NC
31
0
32
NC
1
NC
2
29
NC
3
28
NC
4
27
5
26
19
20
NC
18
NC
NC
17
16
NC
15
0.8pF
E
E
E
E
E=4.1deg
F=2.7GHz
E=1.6deg
F=2.7GHz
E=3.7deg
F=2.7GHz
E=5.1deg
F=2.7GHz
E=1.4deg
F=2.7GHz
Z=50
C5
C7
Z=50
E
21
14
NC 10
13
22
12
9
11
23
NC
24
8
NC
7
NC
C12
2.2pF
25
NC
E
Z=50
C8
3.6pF
Z=41.3
Z=50
E
E
E=2.3deg
F=2.7GHz
E=42.7deg
F=2.7GHz
RFOUT
E=87.1deg
F=2.7GHz
MGFS39E2527A
C9
Z=8.5
3.4pF
6
C6
Z=8.5
Z=41.3
RFIN
30
2.2pF
NC
35
33
NC
NC
38
37
NC
39
40
1nF
33kOhm
1nF
36
0
1nF
C1
0
R1
C3
34
C2
C11
1nF
1nF
C13
C14
1nF
C19
47uF
Vc1
C20
C15
1nF
C21
1uF
C22
1uF
Vcb1
Vcb2
C18
1nF
1nF
C23
47uF
Vc2
C24
47uF
Vc3
47uF
Vc4
NOTE:
<Layout>
A properly designed PC board is essential to any RF/microwave circuit. Be sure to use controlled impedance lines on all
high-frequency inputs and outputs. A ground plane should be present on both the top and bottom of the PC board and
plated-through via holes connecting the top and bottom ground planes should be distributed (See page 6). GND pins and
ground paddle of the package should be connected to the bottom ground plane with plated-through via holes close to the
package. To improve the heat resistance, place as many plated-through via holes as possible under the ground paddle (See
page. 9).
<Output matching circuit>
The output matching circuit is not included in the device so that users can determine the optimum output performance on
their boards at the frequencies of interest. Since the circuit dictates the RF characteristics of PA, especially distortion, it
should be designed with great care to obtain its maximum ability.
The schematic of the evaluation board is shown above. Capacitors, C5~C10 and C24, and controlled impedance lines are
optimized to realize broad-band output matching at frequencies from 2.5 to 2.7GHz.
Input and output matching networks are very sensitive to layout-related parasitic effects. Suggested component values may
vary according to layout and PC board material.
<Bias circuit>
Since the high-impedance feed line for Vc4 is not included in the device, the line has to be laid out on the PCB. In layout
design, please refer to the reference circuit of the feed line which affects the distortion.
Each Vc node on the board should have its own decoupling capacitor to minimize supply coupling from one section of the
MMIC to another. A bypass capacitor with low ESR at the RF frequency of operation is located close to the package to reject
the RF noise. In addition, a large decoupling capacitor is located on each power supply line to reject low frequency noise.
MITSUBISHI ELECTRIC CORP.
(17/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
RECOMMENDED PULSE CONDITION
•Pulse Period : 5ms
•Pulse Width : 2.5 ms
•Delay time
: 0 ms
•Rise time of Vref pulse : 100ns
•Set up time of quiescent current
6V
Vc
0V
Vref
2.85V
0V
Pulse Width
2.5ms
after Vref turn on : 1 us
Pulse Priod
5ms
Delay
Time
0ms
on
RF
Signal
Input off
Pulse Width
2.5ms
Pulse Priod
5ms
time
•
•
•
This figure shows the timing chart between Vref and input signal.
Only while the reference voltage is 2.85V, the device transmits the input signal (*1).
We usually set the delay time at 0ms in our EVB evaluation because of short set-up time. However set-up time often
depends on bypass capacitors of PCB. Therefore, please give appropriate delay time (e.g. about the rise time of
Vref) between the rise edge of Vref and that of the input signal .
• We recommended the device operate with less than 50% duty cycle of a 5msec period in order to ensure specified
reliability.
*1: In case the device is operated under the Vref conditions of more than 50% duty cycle, self-heating will cause
reliability problem, thereby degrading both power gain and EVM performance unexpectedly.
TEST SET-UP
Power Meter
Attenuator
Vector Signal
Generator
Coupler
Vcont
Oscilloscope
•
Attenuator
Vdet
DUT
Attenuator
Coupler
Power Meter
Vref
Vcc
DC Power Supply
•
•
Vector Signal Analyzer
Pulse Power Supply
Oscilloscope
Calibrate power meters at input/output ports on the EVB.
Apply DC voltage to Vcc (Vcb1-3, Vcb4, Vc1~Vc4) and Vcont, where pulsed power supply should be applied to Vref
for pulsed operation. .
Monitor DC output voltage from Vdet using an oscilloscope or a multimeter.
<Power up sequence>
GND->Vcc->Vref->Vcont
(1)Apply 6V to Vcc, where stepping up from 0 to 6V is preferable.
(2)Supply pulsed voltage between 0 and 2.85V for Vref.
Please check the voltage level of Vref close to EVB and the timing chart between
Vref and input signal using an oscilloscope. Also please do not apply supply
voltage exceeding 3V(absolute maximum rating) to the Vref terminal.
(3)Supply Vcont with 3V for the attenuation mode. In the thru-mode, apply 0V to Vcont
or keep it open.
<Power off sequence>
Vcont->Vref->Vcc->GND
The reverse procedure is recommended for bias off.
MITSUBISHI ELECTRIC CORP.
(18/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
PACKAGE DRAWING DIMENSIONS
All Dimensions are in mm. General tolerance is ±0.1mm.
6.0
3-R0.3
0.9(max.)
5.0
C0.4
INDEX
4.2
0.2
6.0
P0.5 x 9 = 4.5
0.2
4.2
5.0
0.2
P0.5 x 9 = 4.5
Top View
Side View
Bottom View
EXAMPLE METAL LAND PATTERN
6600
1695
W:290
p:210
1000
W p W p W p W p
790
p W p W p
800
1000
2695
200
2905
800
210
3695
3905
4695
4905
3790
5195
5405
5695
5800
6600
210
1195
W:290
W p W p W p W p W p W p W
2100
305
p:210
Note:
UNIT : um
Through holes with 200um diameter should be put with a distance of 500um among them.
It is recommended that they have metallization of 25um thick on the inside wall.
MITSUBISHI ELECTRIC CORP.
(19/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
Specifications are subject to change without notice.
HANDLING PRECAUTION
1)
Work desk, test equipment, soldering iron and worker should be grounded before mounting and
testing. Please note that electric discharge of GaAs HBT is much more sensitive than that of Si
transistor. Handling without ground possibly damages GaAs HBT.
2)
The surface of a board on which this product is mounted should be as flat and clean as possible to
prevent a substrate from cracking by bending this product.
3)
Recommended IR reflow soldering condition is shown as follows. (Max. two times)
240deg.C
Peak 245deg.C
225deg.C
≤ 10 sec
(PKG Surface temp.)
≤ 70 sec
Max. Ramp Up Rate ≤ 3deg./sec.
180 ± 10 deg .C
120 ± 20sec Max. Ramp Down Rate
≤ 6deg./sec.
4)
Handling precaution at high temperature
In case of heating this product, please keep the same heat profile as recommended reflow one.
Please note that crack, flaw or modification may be generated if epoxy resin part is handled with
tweezers and etc. at high temperature.
5)
Cleaning condition
Please select after confirming administrative guidance, legal restrictions, and the mass of the residual
ion contaminant etc., and use it.
6)
After soldering, please remove the flux. Please take care that solvent does not penetrate into this
product.
7)
GaAs HBT contains As(Arsenic). This product should be dumped as particular industrial waste.
MITSUBISHI ELECTRIC CORP.
(20/20)
Rev. 1.0
Sep. 30-2009