MITSUBISHI RA02M8087MD-101

Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA02M8087MD
RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA02M8087MD is a 34 dBm output RF MOSFET
Amplifier Module for 7.2 volt portable radios that operate in the
806 to 869 MHz range.
BLOCK DIAGRAM
2
3
4
1
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>34dBm @ VDD=7.2V, Pin=14.5dBm
Idq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) ,
• ηT>30%
@ VDD=7.2V, Pout=34dBm (Pin adjust.),
Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)
• IMD3<-26dBc @ VDD=7.2V, Pout (average) =31dBm (Pin adjust.)
Two tone test at 1KHz separation
Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)
• Broadband Frequency Range: 806-869MHz
• Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.15V
• Module Size: 30 x 10 x 5.4 mm
5
6
1 RF Input (Pin)
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL(Vgg1)
3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL(Vgg2)
4 Drain Voltage (VDD), Battery
5 RF Output (Pout)
6 RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANT
• RA02M8087MD-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA02M8087MD-101
Antistatic tray,
50 modules/tray
RA02M8087MD
28 Jun 2010
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<3.15V
9.2
V
VGG1
Gate Voltage
VDD<7.2V, Pin=0mW
3.15
V
VGG2
Gate Voltage
VDD<7.2V, Pin=0mW
3.15
V
Pin
Input Power
100
mW
Pout
Tcase(OP)
Tstg
f=806-869MHz, Vgg<3.15V
ZG=ZL=50Ω
5
W
Operation Case Temperature Range
Output Power
-30 to +90
°C
Storage Temperature Range
-40 to +110
°C
MIN
TYP
MAX
UNIT
806
-
869
MHz
34
-
-
dBm
30
-
-
%
-
-
-30
dBc
-
-
5.8:1
—
-
1
-
mA
-
-
-26
dBc
-
-
-30
dBc
0
-
4
dB
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, Z G=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
Frequency Range
Pout
Output Power
ηT
Total Efficiency
nd
2fo
2
ρin
Input VSWR
IGG
Gate Current
Harmonic
rd
IMD3
3 Inter Modulation
Distortion
IMD5
5 Inter Modulation
Distortion
th
GV
—
—
CONDITIONS
VDD=7.2V,Pin(Single Carrier)=+16dBm,
Idq1=20mA(Vgg1 adjust.),
Idq2=300mA(Vgg2 adjust.)
VDD=7.2V,Pout (Single Carrier) =34dBm (,Pin adjust.),
Idq1=20mA(Vgg1 adjust.),
Idq2=300mA(Vgg2 adjust.)
VDD=7.2V,Pout (average)=31dBm(Pin adjust.),
Idq1=20mA(Vgg1 adjust.),
Idq2=300mA(Vgg2 adjust.) ,
Two tone test at 1KHz separation
Gain Variation
VDD=7.2V,Pout (Single Carrier)=34dBm(Pin adjust.),
Across specified frequency range
Idq1=20mA(Vgg1 adjust.),
Idq2=300mA(Vgg2 adjust.)
Stability
Vdd=6.12/7.2/9.2V,
Idq1=20mA(Vgg1 adjust),
Idq2=300mA(Vgg2 adjust) ,
Po(Single Carrier)=15-34dBm(Pin control)
LOAD VSWR=2:1(All Phase),Zg=50Ω
Load VSWR Tolerance
Vdd=9.2V, Pout(Single Carrier)=34dBm (Pin adjust.),
LOAD VSWR=2:1(All Phase),Zg=50Ω,
Idq1=20mA(Vgg1 adjust.@Vdd=7.2V),
Idq2=300mA(Vgg2 adjust.@Vdd=7.2V)
No parasitic oscillation
—
No degradation or destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA02M8087MD
RoHS COMPLIANT
TYPICAL PERFORMANCE (Tcase=+25°C, Z G=ZL=50Ω, unless otherwise specified)
RA02M8087MD
IMD3,IMD5 vs. Po
RA02M8087MD
Effi vs. Po
T c=+25deg.C, Vdd=7.2V
f=806MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
T c=+25deg.C, Vdd=7.2V
f=806MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
0
50
Gp
40
35
IMD3,IMD5(dBc)
Effi(%),Gp(dB)
45
Effi
30
25
20
15
10
-10
IMD3(Delta freq=1KHz)
-20
IMD5(Delta freq=1KHz)
-30
-40
-50
-60
5
0
-70
10
15
20
25
30
35
40
15
20
Po(single carrier)(dBm)
Effi vs. Po
40
35
40
35
40
35
40
0
45
Gp
40
35
Effi
IMD3,IMD5(dBc)
50
Effi(%),Gp(dB)
35
T c=+25deg.C, Vdd=7.2V
f=824MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
T c=+25deg.C, Vdd=7.2V
f=824MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
30
25
20
15
10
-10
IMD3(Delta freq=1KHz)
-20
IMD5(Delta freq=1KHz)
-30
-40
-50
-60
5
0
-70
10
15
20
25
30
35
40
15
20
Po(single carrie r)(dBm)
25
30
Po(2tone ave rage )(dBm)
RA02M8087MD
IMD3,IMD5 vs. Po
RA02M8087MD
Effi vs. Po
T c=+25deg.C, Vdd=7.2V
f=851MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
T c=+25deg.C, Vdd=7.2V
f=851MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
0
50
45
Gp
40
35
IMD3,IMD5(dBc)
Effi(%),Gp(dB)
30
RA02M8087MD
IMD3,IMD5 vs. Po
RA02M8087MD
Effi
30
25
20
15
10
-10
IMD3(Delta freq=1KHz)
-20
IMD5(Delta freq=1KHz)
-30
-40
-50
-60
5
0
-70
10
15
20
25
30
35
40
15
20
Po(single carrie r)(dBm)
25
30
Po(2tone ave rage )(dBm)
RA02M8087MD
IMD3,IMD5 vs. Po
RA02M8087MD
Effi vs. Po
T c=+25deg.C, Vdd=7.2V
f=869MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
T c=+25deg.C, Vdd=7.2V
f=869MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
0
45
Gp
40
35
Effi
IMD3,IMD5(dBc)
50
Effi(%),Gp(dB)
25
Po(2tone ave rage )(dBm)
30
25
20
15
10
-10
IMD3(Delta freq=1KHz)
-20
IMD5(Delta freq=1KHz)
-30
-40
-50
-60
5
0
-70
10
15
20
25
30
35
40
15
Po(single carrie r)(dBm)
20
25
30
Po(2tone ave rage )(dBm)
RA02M8087MD
28 Jun 2010
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
OUTLINE DRAWING (mm)
1 INPUT TERMINAL (Pin)
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL (VGG1)
3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL (VGG2)
4 DRAIN BIAS DC SUPPLY TERMINAL (VDD)
5 OUTPUT TERMINAL (Pout)
6 Fin (GND)
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
TEST BLOCK DIAGRAM (TWO TONE)
TEST BLOCK DIAGRAM (SINGLE CARRIER)
1 INPUT TERMINAL (Pin)
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL (VGG1)
3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL (VGG2)
4 DRAIN BIAS DC SUPPLY TERMINAL (VDD)
5 OUTPUT TERMINAL (Pout)
6 Fin (GND)
RA02M8087MD
28 Jun 2010
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
EQUIVALENT CIRCUIT
2
3
4
5
1
6
1 INPUT TERMINAL (Pin)
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL (VGG1)
3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL (VGG2)
4 DRAIN BIAS DC SUPPLY TERMINAL (VDD)
5 OUTPUT TERMINAL (Pout)
6 Fin (GND)
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate,
and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and
matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws
or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M2.6 screws are recommended with a tightening torque of 1.8 to 3.0kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The lead (terminal) must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles
in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=2.5W, VDD=7.2V and Pin=28mW each stage transistor operating conditions are:
Pin
Pout
Rth(ch-case)
IDD @ ηT=30%
VDD
Stage
(W)
(W)
(°C/W)
(A)
(V)
st
0.028
0.14
4.5
0.32
1
7.2
nd
2
0.14
2.5
4.3
0.83
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (7.2V x0.32A – 0.14W + 0.028W) x 4.5°C/W = T case + 9.86 °C
Tch2 = Tcase + (7.2V x 0.83A – 2.5W + 0.14W) x 3.3°C/W
= T case + 11.93 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and P out=2.5W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (2.5W/30% – 2.5W + 0.028W) = 5. 12 °C/W
When mounting the module with the thermal resistance of 5.12 °C/W, the channel temperature of each sta ge
transistor is:
Tch1 = Tair + 39.86 °C
Tch2 = Tair + 41.93 °C
The 175°C maximum rating for the channel temperatur e ensures application under derated conditions.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
Output Power Control:
Depending on linearity, the following two methods are recommended to adjust. the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
b) Linear modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module.
b) Is the load impedance ZL=50Ω.
c) Is the source impedance ZG=50Ω.
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do
not leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and
were not specifically designed for use in other applications. In particular, while these products are highly reliable
for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient
to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of
critical communications elements would include transmitters for base station applications and fixed station
applications that operate with long term continuous transmission and a higher on-off frequency during transmitting,
especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.)
to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than
90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the
worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the
module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing
line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level
also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better and
more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these materials
These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third
party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms,
or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein. The information described here may contain technical inaccuracies
or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage,
liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information
published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor
home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole
or in part these materials.
- If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
-
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