PJSD03TG~PJSD36TG SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE POWER 3~36 Volts 100 Watts FEATURES • 100 Watts peak pules power( tp=8/20µs) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications • Low clamping voltage and leakage current • In compliance with EU RoHS 2002/95/EC directives APPLICATIONS • Case: SOD-723 plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Approx.Weight : 0.00077 gram • Marking : PJSD03TG : FS PJSD05TG : FT PJSD08TG : FU PJSD12TG : FV PJSD15TG : FW PJSD24TG : FX PJSD36TG : FY MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Symbol Value Units Peak Pulse Power (tp=8/20 µs) P PK 100 W ESD Voltage V ESD 25 KV TJ -50OC to 150 OC O TSTG -50OC to 150 OC O Operating Temperature Storage Temperature C C ELECTRICAL CHARA CTERISTICS PJSD03TG Parameter Symbol Conditions Min. Typical Max. Units VRWM - - - 3.3 V V BR IBR=1mA 4 - - V Reverse Leakage Current IR VR=3.3V - - 125 µA Clamping Voltage(8/20 µs) VC IPP=1A - - 7 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - 180 - pF Off State Junction Capacitance CJ 3Vdc Bias=f=1MHz - 100 - pF Reverse Stand-Off Voltage Reverse Breakdown Voltage STAD-MAY.18.2007 PAGE . 1 PJSD03TG~PJSD36TG PJSD05TG Parameter Symbol Conditions Min. Typical Max. Units VR W M - - - 5 V VB R IB R =1mA 6 - - V Reverse Leakage Current IR VR =5V - - 10 µA Clamping Voltage(8/20 µs) VC IP P =8.5 A - - 9.8 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - - 110 pF Off State Junction Capacitance CJ 5Vdc Bias=f=1MHz - 65 - pF Symbol Conditions Min. Typical Max. Units VR W M - - - 8 V VB R IB R =1mA 8.5 - - V Reverse Leakage Current IR VR =8V - - 10 µA Clamping Voltage(8/20 µs) VC IP P =7.5 A - - 13.4 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - - 70 pF Off State Junction Capacitance CJ 8Vdc Bias=f=1MHz - 40 - pF Symbol Conditions Min. Typical Max. Units VR W M - - - 12 V VB R IB R =1mA 13.3 - - V Reverse Leakage Current IR VR =12V - - 1 µA Clamping Voltage(8/20 µs) VC IP P =6.7 A - - 20 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - - 46 pF Off State Junction Capacitance CJ 12Vdc Bias=f=1MHz - 30 - pF Reverse Stand-Off Voltage Reverse Breakdown Voltage PJSD08TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage PJSD12TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage PJSD15TG Parameter Symbol Conditions Min. Typical Max. Units VR W M - - - 15 V VB R IB R =1mA 16.7 - - V Reverse Leakage Current IR VR =15V - - 1 µA Clamping Voltage(8/20 µs) VC IP P =6A - - 24 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - - 35 pF Off State Junction Capacitance CJ 15Vdc Bias=f=1MHz - 20 - pF Reverse Stand-Off Voltage Reverse Breakdown Voltage STAD-MAY.18.2007 PAGE . 2 PJSD03TG~PJSD36TG PJSD24TG Parameter Symbol Conditions Min. Typical Max. Units VR W M - - - 24 V VB R IB R =1mA 26.7 - - V Reverse Leakage Current IR VR =24V - - 1 µA Clamping Voltage(8/20 µs) VC IP P =4.5A - - 43 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - - 25 pF Off State Junction Capacitance CJ 24Vdc Bias=f=1MHz - 14 - pF Reverse Stand-Off Voltage Reverse Breakdown Voltage PJSD36TG Parameter Symbol Conditions Min. Typical Max. Units VR W M - - - 36 V VB R IB R =1mA 40 - - V Reverse Leakage Current IR VR =36V - - 1 µA Clamping Voltage(8/20 µs) VC IP P =3A - - 52 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - - 18 p Off State Junction Capacitance CJ 36Vdc Bias=f=1MHz - 12 - pF Reverse Stand-Off Voltage Reverse Breakdown Voltage PJSD03TG PJ : Panjit SD : Singal direction 03 : Voltage TG : Package SOD-723 STAD-MAY.18.2007 PAGE . 3 100 120 tf 100 WAVEFORM PARAMETERS m 80 e -t m 60 40 80 60 40 20 t d=t I PP/2 20 0 0 0 5 Peak Pulse Power 8/20 m s Peak Value I PP TEST %Of Rated Power I PP-Peak Pulse Current-% of I PP PJSD03TG~PJSD36TG 10 15 20 Average Power 0 25 75 100 125 150 T L-Lead Temperature- OC T-Time- m s FIG. 2-Power Derating Curve FIG. 1- Pulse Wave Form P PP-Peak Pulse Current-Watts 50 30 25 10000 1000 320W,8/20 m s Waveform 100 10 0.01 10 1 100 1000 10000 t d-Pulse Duration- m s FIG. 3-Peak Pulse Power vs Pulse Time C-Ca pacit ance -pF 400 300 200 100 0 0 1 2 3 4 5 6 V R=Reverse Voltage-Volts FIG. 4-Typical Reverse Voltage vs Capacitance STAD-MAY.18.2007 PAGE . 4 PJSD03TG~PJSD36TG MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 8K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-APR.26.2007 PAGE . 5