Ordering number : EN*A1004 Monolithic Linear IC LA75521VA IF Signal Processing (VIF+SIF) IC that Supports the PAL Video Standard for TV Sets and VCRs Overview The LA75521VA is a fully adjustment-free VIF + SIF signal processing IC for TV sets and VCRs that supports the PAL video standard. It supports 38.0MHz, 38.9MHz, and 39.5MHz as the IF frequencies, as well as PAL sound multi-system (M/N, B/G, I and D/K), and contains an on-chip sound carrier trap. The IC employs a 4MHz frequency (which can be switched to 4.43MHz) as the reference frequency of the adjustment free circuit, and controls the VCO, AFT, and sound filter using an external input signal. Features • • • • • Internal VCO adjustment free circuit eliminating the need for an external VCO coil. Internal sound carrier trap enables easy configuration of PAL sound multi-system at low cost. Considerably reduces the number of required peripheral parts. Use of digital AFT eliminates a problem of AFT tolerance. Package: SSOP24(225mil) Functions • VIF amplifier • Adjustment-free VCO and PLL detector circuit • Digital AFT circuit • RF AGC • Buzz canceller • EQAMP • Internal sound carrier trap • First SIF detector circuit • PLL-FM detector circuit Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. 21308 TI IM No.A1004-1/13 LA75521VA Specifications Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC 6 Allowable power dissipation Pd max Operating temperature Topr -20 to +70 °C Storage temperature Tstg -55 to +150 °C Ta ≤ 70°C, Mounted on a specified board.* 640 V mW *: Mounted on a specified board: 76.1mm×114.3mm×1.6mm, glass epoxy board Operating Conditions at Ta = 25°C Parameter Symbol Recommended supply voltage VCC Operating supply voltage VCC op Conditions Ratings Unit 5.0 V 4.5 to 5.5 V Electrical Characteristics at Ta = 25°C, VCC = 5.0V, fp = 38.9MHz Parameter Symbol Conditions No. Ratings min typ Unit max VIF block Circuit current I4 V1 75 85 95 mA Max RF AGC voltage V14H V2 4.0 4.5 5.0 V Min RF AGC voltage V14L V3 0.0 0.5 1.0 V 38 dBμV Input sensitivity Vi V4 26 32 AGC range GR V5 58 63 dB Vi max V6 95 100 dBμV Max allowable input Quiescent video output voltage Sync signal edge voltage Video output level Video out 2 V5 V7 2.2 2.5 2.8 V5 tip V8 0.8 1.0 1.2 V V VO V9 1.0 1.2 1.4 Vp-p Black noise threshold voltage VBTH V10 0.5 0.8 1.1 V Black noise clamp voltage VBCL V11 1.2 1.5 1.8 V Video S/N S/N B/G V12 46 50 C-S best IC-S P/S = 10dB V13 38 43 Differential gain DG VIN = 80dBμ V14 3 6.5 Differential phase DP V15 3 5 Quiescent AFT voltage V12 2.5 3.0 15pin to VCC V16 2.0 dB dB % deg V Max AFT voltage V12H LOAD 22kΩ/22kΩ V17 4 4.5 5 V Min AFT voltage V12L LOAD 22kΩ/22kΩ V18 0 0.5 1 V AFT sensitivity SF LOAD 22kΩ/22kΩ V19 8.5 12.5 16.5 APC pull-in range (U) Fpu V20 2.0 APC pull-in range (L) Fpl V21 β V22 VCO control sensitivity 3 2.4 mV/kHz MHz -2.4 -2.0 MHz 6 12 kHz/mV kΩ VIF input resistance Ri 38.9MHz V23 1.0 1.5 VIF input capacity Ci 38.9MHz V24 3 6 N trap1 (4.5M) NT1 wrt 1MHz V25 N trap2 (4.8M) NT2 wrt 1MHz V26 -19 -24 dB BG trap1 (5.5M) BT1 wrt 1MHz V27 -27 -32 dB BG trap2 (5.85M) BT2 wrt 1MHz V28 -20 -25 dB I trap1 (6.0M) IT1 wrt 1MHz V29 -25 -30 dB I trap2 (6.55M) IT2 wrt 1MHz V30 -15 -20 dB DK trap1 (6.5M) DT1 wrt 1MHz V31 -25 -30 NGD1 wrt 1MHz V32 30 80 145 ns NGD1-1 wrt 1MHz V33 110 200 290 ns BGD2 wrt 1MHz V34 50 130 210 ns BGD2-1 wrt 1MHz V35 120 200 280 ns Group delay 1 NTSC (3.0M) Group delay 1-1 NTSC (3.5M) Group delay 2 BG (4M) Group delay 2-1 BG (4.4M) -30 -35 pF dB dB Continued on next page. No.A1004-2/13 LA75521VA Continued from preceding page. Parameter Group delay 3 I (4M) Symbol Conditions No. Ratings min typ Unit max IGD3 wrt 1MHz V36 0 80 130 ns Group delay 3-1 I (4.4M) IGD3-1 wrt 1MHz V37 80 120 160 ns Group delay 4 DK (4M) DGD4 wrt 1MHz V38 10 30 50 ns Group delay 4-1 DK (4.4M) DGD4-1 wrt 1MHz V39 30 60 90 ns Video f characteristics MN1 VFMN1 M/N 1 to 2MHz V40 -1.0 0.0 1.0 dB Video f characteristics MN2 VFMN2 M/N 2 to 3MHz V41 -1.0 0.0 1.0 dB Video f characteristics MN3 VFMN3 M/N 3.58MHz V42 -3.0 -1.5 0.0 dB Video f characteristics BG1 VFBG1 B/G 1 to 3MHz V43 -1.0 0.0 1.5 dB Video f characteristics BG2 VFBG2 B/G 3 to 4MHz V44 -1.5 0.0 1.5 dB Video f characteristics BG3 VFBG3 B/G 4.43MHz V45 -2.5 -1.0 0.5 dB Video f characteristics I1 VFI1 I 1 to 3MHz V46 -1.0 0.0 1.0 dB Video f characteristics I2 VFI2 I 3 to 4MHz V47 -1.0 0.0 1.5 dB Video f characteristics I3 I 4.43MHz V48 -1.5 0.0 1.5 dB Video f characteristics DK1 VFDK1 VFI3 D/K 1 to 3MHz V49 -1.0 0.0 1.0 dB Video f characteristics DK2 VFDK2 D/K 3 to 4MHz V50 -1.0 0.0 1.5 dB Video f characteristics DK3 VFDK3 D/K 4.43MHz V51 -1.5 0.0 1.5 dB Group delay 2-2 BG shift (4M) BGD2-2 wrt 1MHz V52 50 100 150 ns Group delay 2-3 BG shift (4.4M) BGD2-3 wrt 1MHz V53 110 180 250 ns SIF carrier output level 1 So1 Vi = 1mV F1 21 43 86 mVrms SIF carrier output level 2 So2 Vi = 10mV F2 21 43 86 mVrms F3 110 120 1st SIF Block 1st SIF max input Si max dBμV 1st SIF input resistance Ris 33.4MHz F4 2 2.4 kΩ 1st SIF input capacity Cis 33.4MHz F5 3 6 pF dBμV SIF Block Limiting sensitivity (SPLIT) Vi (lim) (SP) P = 80dBμ CW S1 20 25 30 Limiting sensitivity (INTER) Vi (lim) (IN) P = 80dBμ P/S S2 29 35 41 dB FM detection output voltage VO (FM) f = 5.5MHz, ΔF = ±30kHz S3 390 560 730 mVrms 50 AM removal ratio AMR S4 Distortion factor THD S5 FM detection output S/N PAL/NT audio voltage gain difference S/N (FM) P = 80dBμ CW GD S6 dB 60 0.3 0.8 % 60 dB S7 6 dB 55 PAL De-emphasis Pdeem S8 -3 dB NT De-emphasis Ndeem S9 -3 dB SIF system SW threshold voltage A/B V7_9th C1 2.2 2.5 2.8 V 38MHz/38.9MHz threshold voltage V10th1 C2 0.7 1.0 1.3 V 38.9MHz/39.5MHz threshold voltage V10th2 C3 3.7 4.0 4.3 V Inter-carrier system V13th C4 0.3 V AFT mute level/SIF trap shift V15th1 Control Block threshold voltage 1 AFT mute level/SIF trap shift V15th2 threshold voltage 2 AFT mute level/SIF trap shift V15th3 threshold voltage 3 C5 0.7 1.0 1.3 V C6 2.2 2.5 2.8 V C7 3.7 4.0 4.3 V O1 83 90 95 dBμV O2 150 270 Others Ref clock input level Reference frequency SW threshold resistance Reflev R11 4.0MHz kΩ No.A1004-3/13 LA75521VA Package Dimensions unit : mm (typ) 3287 Pd max - Ta 6.5 1200 24 Allowable Power Dissipation, Pd max - mW 0.5 6.4 4.4 13 12 1 0.5 0.15 0.22 800 600 400 200 0 -20 0 (1.3) 1.5max (0.5) 1000 Mounted on a specified board: 76.1mm ×114.3mm ×1.6mm, glass epoxy board 20 40 60 80 100 0.1 Ambient T emperature, T a - °C SANYO : SSOP24(225mil) System changeover a. SIF system SW The SIF system changeover can be made by connecting both/either A (pin 7) and/or B (pin 9) to GND or by keeping both or either of them OPEN. A B GND GND GND OPEN OPEN GND OPEN OPEN BG I DK MN { { { { FM DET LEVEL de-emphasis 0dB 50μs 0dB 50μs 0dB 50μs 6dB 75μs Note: { indicates that the system is selected. b. IF system SW The IF frequency becomes 38.9MHz when pin 10 is open. The IF frequency changes to 38.0MHz when pin 10 is connected to GND. This frequency also changes to 39.5MHz when pin 10 is set to VCC. c. split/inter carrier SW Inter carrier is selected by connecting the 1st SIF input (pin 13) to GND. d. Reference frequency changeover SW The frequency becomes 4.43MHz when pin 11 is open. The frequency becomes 4.0MHz when 270kΩ is connected between pin 11 and GND. e. AFT mute level, TRAP point shift By changing the voltage of pin 15, the potential when AFT is muted and the TRAP point of either “just” or “shift” (about +220kHz) can be selected. Pin 15 potential AFT mute potential TRAP point shift VCC to 4V MIDDLE (VCC/2) Just 4V to 2.5V MIDDLE (VCC/2) Shift 2.5V to 1V HI (VCC) Just 1V to GND HI (VCC) Shift * With VCC = 5V f. When the FM detection function is not used When the SIF circuit is not used and the FM detection VCO is to be stopped, short-circuit pin 1 - GND with the resistance of 1kΩ or less. No.A1004-4/13 LA75521VA Pin Assignment DE-EMPHASIS C 1 24 AUDIO OUTPUT SIF AGC FILTER 2 23 FILTER CONTROL C FM PLL FILTER 3 22 AUDIO BIAS FILTER VCC 4 21 SIF CARRIER OUTPUT VIDEO OUTPUT 5 20 RF AGC VR EQ FILTER 6 SIF SYSTEM SW A 7 18 VIF IN 1 APC FILTER 8 17 VIF IN 2 SIF SYSTEM SW B 9 16 VIF AGC FILTER 19 GND LA75521VA VIF FREQUENCY SW 10 15 AFT MUTE LEVEL REFERENCE CP INPUT 11 14 RF AGC OUTPUT 13 1st SIF INPUT AFT OUTPUT 12 Top view Block Diagram SOUND CARRIER OUTPUT RF AGC OUTPUT VIF/SIF INPUT SW15 AUDIO OUTPUT SAWF(P) 1μF 24 23 0.022μF SAWF(S) 22 21 20 19 18 RF AGC AMP FM DET 17 16 VIF AMP IF AGC SPLIT AMP 15 14 2 0.01μF 4 0.033μF 3.3kΩ 5 VCO AFT SW 7 8 9 0.47μF 51Ω 330pF VIDEO OUTPUT SW11 REFERENCE OPEN 4.43MHz SHORT 4.0MHz SW13 SYSTEM OPEN SPLIT SHORT INTER V4 MIDDLE (VCC/2) 0 V3 MIDDLE (VCC/2) +250kHz V2 HI (VCC) 0 V1 HI (VCC) +250kHz Pin 7 Pin 9 SIF SYSTEM MODE CTRL 10 11 SW10 V3 V2 V1 0.01μF 38.0MHz SW15 AFT MUTE LEVEL B/G TRAP SHIFT INT 6 38.9MHz V1 13 VIDEO DET EQ AMP 3 39.5MHz V2 AGC APC AGC V3 1stSIF TRAP AMP TRAP SIF AMP SW10 VIF FREQUENCY SW13 1μF DEEMP 1 V4 V3 V2 V1 SYSTEM SW SYSTEM SW B A VIF FREQ. AFT OUTPUT 12 HI HI HI LO M I LO HI B/G LO LO D/K SW11 1000pF VCC 270kΩ 4.43/4MHz No.A1004-5/13 LA75521VA AC Characteristics Test Circuit SOUND CARRIER OUTPUT 0.01μF AUDIO OUTPUT 1μF 1μF 24 23 22 51Ω 30KVR 20 19 RF AGC DEEMP 1000pF 0.022μF 18 30kΩ 0.01μF 0.01μF 21 17 16 VIF AMP 15 14 13 AGC VIDEO DET SPLIT AMP INT FM DET RF AGC OUTPUT 1stSIF TRAP AMP IF AGC AMP VCC (5V) 51Ω 0.01μF 0Ω SIF INPUT VIF INPUT IFAGC V15 VCO AFT TRAP SW APC SIF AMP AGC 3 4 5 6 7 9 10 11 12 AFT OUTPUT FILTER 1.5kΩ 0.47μF EQ FILTER V7 V9 V10 4MHz CP INPUT 22kΩ 1000pF 22kΩ 33Ω 330pF 0.033μF 8 270kΩ 0.01μF 100kΩ 0.01μF 2 3.3kΩ 1 MODE CTRL EQ AMP 0.1μF VCC (5V) VIDEO VIDEO OUTPUT2 OUTPUT1 No.A1004-6/13 LA75521VA Test Circuit Input Impedance Test Circuit (VIF and first SIF input impedance) Impedance analyzer 1st SIF IN 24 23 22 21 20 19 18 17 0.01μF 0.01μF 0.01μF 0.01μF 0.01μF 0.01μF 0.01μF 0.01μF 0.01μF 0.01μF 0.01μF VIF IN 16 15 14 13 9 10 11 12 100μF 22kΩ 0.01μF 0.01μF 0.01μF 8 0.01μF 7 0.01μF 6 0.01μF 5 0.01μF 4 1kΩ 3 0.01μF 2 0.01μF 0.01μF 1 0.01μF 22kΩ LA75521VA VCC No.A1004-7/13 LA75521VA Pin Functions Pin Pin name No. 1 DE-EMPHASIS C Function Equivalent Circuit De-emphasis capacitor connection pin This is used to switch the equivalent resistance (5kΩ or 7.5kΩ) internally in the IC to select the 4kΩ time constant. 1 This switching is linked to the SIF input switch. To disable de-emphasis, disconnect the capacitor. Connection of an external capacitance of 0.01μF enables switching between 50 and 75μs. When the FM detector circuit is not to be used, the 0.01μF FM VCO can be stopped by connecting it to ground with a resistor of 1kΩ or less. 2 SIF AGC FILTER AGC filter pin for SIF carrier 0.01μF is recommended for C1. 2kΩ 2 C1 3 FM PLL FILTER PLL filter pin of FM detector This is used to configure an external lag lead filter. Example: Connect 330pF in parallel with the filter (0.033μF + 3.3kΩ). 3 0.033μF 8kΩ 330pF 3.3kΩ 3 4 VCC Power supply 5 EQ OUT Equalizer circuit. This circuit is used to correct the 6 EQ FILTER video signal frequency characteristics. Notes on equalizer amplifier design • The equalizer amplifier is designed as a voltage follower amplifier with a gain of about 0 dB. When used for frequency characteristics correction, a capacitor, inductor, and resistor must be 2kΩ R1:1kΩ 5 connected in series between pin 6 and ground. R1 Equalizer amplifier gain AV = Z + 1 R1 is the IC internal resistance, and is 1kΩ. In the application design, simply select Z to correspond to the desired characteristics. However, since the EQ amplifier gain will be maximum at the resonant point defined by Z, care is required to assure that distortion does not occur. 6 C L =Z R Continued on next page. No.A1004-8/13 LA75521VA Continued from preceding page. Pin No. Pin name Function Equivalent Circuit 7 SIF SYSTEM SW A SIF system selection switch pins. Combining the 9 SIF SYSTEM SW B settings of these two pins supports four systems. In M/N mode, the audio output level is increased 50kΩ 50kΩ by 6dB. The internal trap is also linked to these switches. A 7 1kΩ 1kΩ 9 1kΩ 80kΩ 1kΩ B The truth-values are as follows. 8 APC FILTER Pin 7 Pin 9 MODE H H M H L I L H B/G L L D/K 80kΩ 30kΩ 30kΩ PLL APC filter connection pin. The APC count is switched internally in the IC. The VCO is normally controlled by route A. When unlocked and during weak field reception, the VCO is controlled by route B and the loop gain is increased. For this APC filter we recommend a resistor of 51Ω FROM APC A DET 1kΩ 1kΩ and capacitor of 0.47μF. The buzz characteristics can be improved by connecting a capacitor of 100pF or so between B pins 5 and 8. 8 10 VIF FREQUENCY SW Switch pin for selecting the IF frequency When this pin is open, 1/2VCC exists. 50kΩ VCC: 39.5MHz Open: 38.9MHz GND: 38.0MHz 11kΩ 10 50kΩ 11 REFERENCE CP Reference signal input pin necessary for adjusting INPUT the internal sound carrier trap, AFT, etc. Either 4.0 or 4.43MHz can be selected. Use the configuration shown in example 1 when using 4.43MHz and configuration shown in example 2 200kΩ when using 4.0MHz. Since no oscillator can be configured simply by connecting the X’tal resonator to pin 11, input the reference signal from an external source without fail. Example 1 Example 2 11 11 1000pF 4.43M 1000pF 11 270kΩ 4.0MHz Continued on next page. No.A1004-9/13 LA75521VA Continued from preceding page. Pin No. 12 Pin name AFT OUTPUT Function Equivalent Circuit AFT output pin. The AFT center voltage is generated by an external bleeder resistor. The AFT gain is increased by increasing the resistance of this external bleeder resistor. R For the resistor we recommend a resistance equal 500Ω to or greater than 22kΩ. For the filter C1 we recommend a capacitance of 12 0.1μF. 500Ω 13 1st SIF INPUT R C1 First SIF input pin. A DC cut capacitor must be used in the input circuit. (a) If a SAW filter is used : The first SIF sensitivity can be increased by 2kΩ inserting an inductor between the SAW filter and the IC to neutralize the SAW filter output capacitance and the IC input capacitance. (b) When used in an intercarrier system : Connect this pin to ground. 13 14 RF AGC OUTPUT RF AGC output pin. This output controls the tuner RF AGC. This is the open collector output and a protective VCC 200Ω resistor is inserted. Determine the external bleeder resistor value in accordance with the specifications of the tuner. 15 AFT MUTE LEVEL 200Ω 14 A switch pin for selecting the mute potential when muting is applied to the AFT due to PLL unlock, etc. At the same time, it is used to control the trap point shift of the audio trap (in the B/G mode). When the frequency characteristics of the video 66kΩ band are to be made as flat as possible with the split input, the trap can be shifted to the high range although the attenuation of the sound carrier will drop. Therefore, when used in combination with 15 the SAW filter, verify that the level is high enough before use. Voltage ATF MUTE Voltage TRAP SHIFT VCC to 4V VCC/2 0 4V to 2.5V VCC/2 +250kHz 2.5V to 1V VCC 0 1V to GND VCC +250kHz 34kΩ * When VCC = 5 V Continued on next page. No.A1004-10/13 LA75521VA Continued from preceding page. Pin Pin name No. 16 IF AGC Function Equivalent Circuit IF AGC filter connection pin. The signal peak-detected by the built-in AGC 5kΩ detector is converted to the AGC voltage at pin 16. Additionally, a second AGC filter (a lag-lead filter) used to create the dual time constants is provided internally in the IC. 1kΩ Use a 0.022μF capacitor as the external capacitor (C1), and adjust the value according to the sag, AGC speed, and other characteristics. 1kΩ 16 C1 17 VIF IN2 VIF amplifier input pin 18 VIF IN1 The input circuit is a balanced circuit, and the input impedance is as follows: R ≈ 1.0kΩ 1kΩ 1kΩ 17 18 19 GND 20 RF AGC VR RF AGC volume connection pin This pin sets the tuner RF AGC operating point. Also, the FM output and the video output can both be muted at the same time by connecting this pin to ground. 1kΩ 1kΩ 20 21 SIF CARRIER First SIF output pin OUT This is an emitter-follower output with a 200Ω resistor attached in series. 200Ω 21 Continued on next page. No.A1004-11/13 LA75521VA Continued from preceding page. Pin No. 22 Pin name Function AUDIO BIAS Connection pin for a filter used to hold the FM FILTER detector output DC voltage fixed. Normally, a 1μF Equivalent Circuit 300Ω 300Ω 40kΩ electrolytic capacitor should be used. The 40kΩ capacitance (CI) should be increased if the low band (around 50Hz) frequency characteristics need to be improved. 22 + 23 FILTER Internal filter (trap) control pin CONTROL C Connect a capacitor with a capacitance between C1 0.47 to 1μF, depending on the video S/N as well as the levels of the AM and PM noise. 23 24 AUDIO OUTPUT Sound output pin Emitter follower output 24 1kΩ No.A1004-12/13 LA75521VA SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No.A1004-13/13