STMICROELECTRONICS STPS10120CT

STPS10120C
Power Schottky rectifier
Table 1.
Main product characteristics
IF(AV)
2x5A
VRRM
120 V
Tj(max)
175° C
VF(typ)
A1
K
A2
0.64 V
Feature and benefits
K
■
High junction temperature capability
■
Good trade-off between leakage current and
forward voltage drop
■
Low leakage current
■
Avalanche capability specified
■
Insulated package
– TO-220FPAB
Insulating voltage = 2000 V
Typical package capacitance 12 pF
A1
Table 2.
Dual center tap Schottky rectifier suited for high
frequency switch mode power supplies.
Repetitive peak reverse voltage
IF(RMS)
RMS forward current
Marking
STPS10120CT
STPS10120CT
STPS10120CFP
STPS10120CFP
1.
Average forward current,
δ = 0.5
Tc = 150° C
TO-220FPAB
Tc = 150° C
Tc = 135° C
Per diode
Per device
Per diode
Per device
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25° C
dPtot
--------------dTj
Storage temperature range
Maximum operating junction temperature(1)
dV/dt
TO-220FPAB
STPS10120CFP
Part number
Tc = 160° C
TO-220AB
Tj
A2
K
Order code
Parameter
VRRM
Tstg
A1
Absolute ratings (limiting values, per diode)
Symbol
IF(AV)
A2
TO-220AB
STPS10120CT
Description
Table 3.
K
Critical rate of rise of reverse voltage
Value
Unit
120
V
30
A
5
10
5
A
10
120
A
3000
W
-65 to + 175
°C
175
°C
10000
V/µs
1
- condition to avoid thermal runaway for a diode on its own heatsink
< ------------------------Rth ( j – a )
July 2007
Rev 1
1/8
www.st.com
8
Characteristics
1
STPS10120C
Characteristics
Table 4.
Thermal parameters
Symbol
Rth(j-c)
Parameter
Value
TO-220AB
Per diode
Total
3.8
2.3
TO-220FPAB
Per diode
Total
6.6
5.2
Junction to case
TO-220AB
Rth(c)
Unit
° C/W
0.7
Coupling
Total
TO-220FPAB
3.7
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 5.
Static electrical characteristics (per diode)
Symbol
IR(1)
Test conditions
Reverse leakage current
Tj = 25° C
Tj = 125° C
Tj = 25° C
VF(2)
Forward voltage drop
Tj = 125° C
Tj = 25° C
Tj = 125° C
Min.
VR = VRRM
Typ.
1
Unit
6
µA
3
mA
0.85
IF = 5 A
0.64
0.7
V
0.96
IF = 10 A
0.73
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.60 x IF(AV) + 0.02 IF2(RMS)
2/8
Max.
0.8
STPS10120C
Figure 1.
4.5
Characteristics
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
PF(AV)(W)
IF(AV)(A)
6
δ = 0.1
δ = 0.05
4.0
δ = 0.5
δ = 0.2
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
6
Rth(j-a)=Rth(j-c)
5
3.5
5
δ=1
4
3.0
TO-220FPAB
Rth(j-a)=30° C/W
4
2.5
TO-220AB
3
2.0
3
1.5
2
T
1.0
T
2
1
0.5
IF(AV)(A)
δ=tp/T
0.0
1
tp
δ=tp/T
Tamb(°C)
tp
0
0.0
0.5
1.0
Figure 3.
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Normalized avalanche power
derating versus pulse duration
0
25
50
Figure 4.
PARM(tp)
PARM(1µs)
75
100
125
150
175
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(25°C)
1
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
0.001
0.01
0.1
Figure 5.
90
Tj(°C)
tp(µs)
1
0
10
100
25
1000
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB)
IM(A)
Figure 6.
70
80
50
75
100
125
150
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220FPAB)
IM(A)
60
70
50
60
Tc=25°C
Tc=25°C
50
Tc=75°C
40
40
Tc=75°C
30
30
Tc=125°C
20
20
Tc=125°C
IM
10
0
1.E-03
IM
10
t
t(s)
δ=0.5
t
t(s)
δ=0.5
0
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
1.E+00
3/8
Characteristics
Figure 7.
1.0
STPS10120C
Relative variation of thermal
Figure 8.
impedance junction to case versus
pulse duration (TO-220AB)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
0.2
Single pulse
Single pulse
0.1
0.1
tp(s)
0.0
tp(s)
0.0
1.E-03
1.E-02
Figure 9.
1.E+03
1.E-01
1.E+00
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
IR(µA)
1000
C(pF)
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=125°C
1.E+02
Tj=100°C
1.E+01
Tj=75°C
100
Tj=50°C
1.E+00
Tj=25°C
1.E-01
VR(V)
VR(V)
10
1.E-02
0
10
20
30
40
50
60
70
80
90
100
110
120
Figure 11. Forward voltage drop versus
forward current (per diode)
200
IFM(A)
180
160
140
Tj=125°C
(maximum values)
120
100
Tj=25°C
(maximum values)
Tj=125°C
(typical values)
80
60
40
20
VFM(V)
0
0.0
4/8
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
1
10
100
1000
STPS10120C
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.4 to 0.6 Nm
Table 6.
TO-220AB dimensions
Dimensions
Ref.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
M
G1
Millimeters
16.4 typ.
0.645 typ.
E
G
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
Diam.
2.6 typ.
3.75
3.85
0.102 typ.
0.147
0.151
5/8
Package information
Table 7.
STPS10120C
TO-220FPAB dimensions
Dimensions
Ref.
A
B
H
Dia
L6
L2
L7
L3
L5
F1
L4
F
G
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
D
F2
G1
Millimeters
L2
E
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
6/8
STPS10120C
3
Ordering information
Ordering information
Table 8.
4
Ordering information
Part number
Marking
Package
Weight
Base qty
Delivery mode
STPS10120CT
STPS10120CT
TO-220AB
2.2 g
50
Tube
STPS10120CFP
STPS10120CFP
TO-220FPAB
2.0 g
50
Tube
Revision history
Table 9.
Revision history
Date
Revision
11-Jul-2007
1
Changes
First issue
7/8
STPS10120C
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
8/8