STMICROELECTRONICS STPS40170CGY-TR

STPS40170C-Y
Automotive high voltage power Schottky rectifier
Features
A1
K
■
High junction temperature capability
■
Low leakage current
■
Good trade off between leakage current and
forward voltage drop
■
Low thermal resistance
■
High frequency operation
■
Avalanche specification
■
AEC-Q101 qualified
A2
K
A2
A1
D2PAK
STPS40170CGY-TR
Description
Dual center tab Schottky rectifier suited for high
frequency switched mode power supplies.
Table 1.
Packaged in D2PAK, these devices are intended
for use to enhance the reliability of the application
in automotive segment.
November 2011
Doc ID 17960 Rev 1
Device summary
Symbol
Value
IF(AV)
2 x 20 A
VRRM
170 V
Tj
175 °C
VF (max)
0.75 V
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7
Characteristics
STPS40170C-Y
1
Characteristics
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
VRRM
IF(RMS)
Parameter
Value
Unit
Repetitive peak reverse voltage
170
V
Forward rms current
60
A
Tc = 150 °C δ = 0.5
Average forward current
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25° C
Tstg
Tj
dV/dt
20
Per diode
Per device
IF(AV)
A
40
Storage temperature range
Operating junction
temperature(1)
250
A
14100
W
-65 to + 175
°C
-40 to + 175
°C
10000
V/µs
Value
Unit
1.2
0.85
°C/W
Critical rate of rise reverse voltage
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
1.
Table 3.
Thermal resistance parameters
Symbol
Parameter
Rth (j-c)
Junction to case
Rth (c)
Coupling
Per diode
Total
0.5
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4.
Symbol
IR (1)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Tests conditions
Tj = 25 °C
Tj = 125 °C
Tj = 25° C
VF (2)
Forward voltage drop
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Min.
Typ.
7
Max.
Unit
30
µA
30
mA
0.92
IF = 20 A
0.69
0.75
V
1.00
IF = 40 A
0.79
0.86
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation : P = 0.64 x IF(AV) + 0.0055 IF2(RMS)
2/7
Doc ID 17960 Rev 1
STPS40170C-Y
Figure 1.
Characteristics
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
IF(AV)(A)
PF(AV)(W)
22
d=0.05
20
d=0.1
d=0.5
d=0.2
22
d=1
Rth(j-a)=Rth(j-c)
20
18
18
16
16
14
14
12
12
10
10
8
Rth(j-a)=15°C/W
8
6
6
T
4
T
4
2
d=tp/T
IF(AV)(A)
2
tp
0
d=tp/T
tp
Tamb (°C)
0
0
2
4
Figure 3.
6
8
10
12
14
16
18
20
22
24
26
28
Normalized avalanche power
derating versus pulse duration
0
25
Figure 4.
PARM(tp)
PARM(1µs)
1
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
1.2
50
75
100
125
150
175
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1
0.1
0.8
0.6
0.4
0.01
0.2
tp(µs)
0.001
0.01
0.1
Figure 5.
1
10
1000
100
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Tj(°C)
0
25
50
Figure 6.
IM(A)
75
100
150
125
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
250
1.0
0.9
200
0.8
0.7
TC=50°C
150
TC=75°C
100
d=0.5
0.6
0.5
0.4
d=0.2
0.3
d=0.1
T
TC=125°C
50
0.2
IM
t
0
1.E-03
0.1
t(s)
d =0.5
1.E-02
1.E-01
1.E+00
Single pulse
0.0
1.E-03
Doc ID 17960 Rev 1
d=tp/T
tP(s)
1.E-02
1.E-01
tp
1.E+00
3/7
Characteristics
Figure 7.
STPS40170C-Y
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 8.
IR(µA)
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
1000
1.E+05
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1.E+04
Tj=125°C
1.E+03
Tj=100°C
1.E+02
100
Tj=75°C
Tj=50°C
1.E+01
Tj=25°C
1.E+00
VR(V)
VR(V)
10
1.E-01
0
1
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
Figure 9.
Forward voltage drop versus
forward current
(per diode, low level)
10
100
1000
Figure 10. Forward voltage drop versus
forward current
(per diode, high level)
IFM(A)
IFM(A)
20
1000
18
Tj=125°C
(Maximum values)
16
Tj=125°C
(Maximum values)
14
100
12
Tj=125°C
(Typical values)
10
Tj=125°C
(Typical values)
Tj=25°C
(Maximum values)
8
10
6
4
Tj=25°C
(Maximum values)
2
VFM(V)
VFM(V)
0
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 11. Thermal resistance junction to ambient versus copper surface under tab
Rth(j-a) (°C/W)
80
D²PAK
epoxy printed board, FR4, Cu = 35 µm
70
60
50
40
30
20
10
SCU(cm²)
0
0
4/7
5
10
15
20
25
Doc ID 17960 Rev 1
30
35
40
1.6
1.8
STPS40170C-Y
2
Package information
Package information
●
Epoxy meets UL94, V0.
●
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 5.
D2PAK dimensions
Dimensions
Ref.
A
E
C2
L2
D
L
B2
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
C
B
G
A2
M
*
Inches
Min.
L3
A1
Millimeters
V2
* FLAT ZONE NO LESS THAN 2mm
R
V2
0.40 typ.
0°
0.016 typ.
8°
0°
8°
Figure 12. Footprint (dimensions in mm)
16.90
10.30
5.08
1.30
8.90
Doc ID 17960 Rev 1
3.70
5/7
Ordering information
3
STPS40170C-Y
Ordering information
Table 6.
Ordering information
Order code
Marking
STPS40170CGY-TR STPS40170CGY
4
Weight
Base qty
Delivery mode
D2PAK
1.48 g
1000
Tape and reel
Revision history
Table 7.
6/7
Package
Revision history
Date
Revision
03-Nov-2011
1
Changes
Initial release.
Doc ID 17960 Rev 1
STPS40170C-Y
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