HERF1001G - HERF1008G CREAT BY ART Pb 10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers ITO-220AB RoHS COMPLIANCE Features UL Recognized File # E-326243 Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: ITO-220AB Molded plastic Epoxy: UL 94V-0 rate flame retardant Dimensions in inches and (millimeters) Marking Diagram Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed HERF100XG = Specific Device Code Polarity: As marked G = Green Compound High temperature soldering guaranteed: 260℃/10s /0.25", (6.35mm) from case Y = Year WW = Work Week Mounting torque: 5 in-lbs. max Weight: 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HERF HERF HERF HERF HERF HERF HERF HERF 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G 50 100 200 300 400 600 800 1000 Unit Maximum Repetitive Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current @ TC=100℃ IF(AV) 10.0 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 125 A Maximum Instantaneous Forward Voltage (Note 1) @ 5.0A Maximum Reverse Current @ Rated VR T A=25 ℃ T A=125 ℃ Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range VF 1.0 1.3 1.7 V 10 IR uA 400 Trr 50 80 Cj 60 40 RθjC V nS pF O 3 C/W TJ - 65 to + 150 O C TSTG - 65 to + 150 O C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E11 RATINGS AND CHARACTERISTIC CURVES (HERF1001G THRU HERF1008G) FIG. 2 TYPICAL REVERSE CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 1000 10 INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD A CURRENT (A) 12 8 6 4 2 0 0 25 50 75 100 125 CASE TEMPERATURE (oC) 150 175 TA=125℃ 100 10 TA=75℃ 1 TA=25℃ 0.1 40 60 80 100 120 140 8.3mS Single Half Sine Wave JEDEC Method 200 150 FIG. 5 TYPICAL FORWARD CHARACTERISRICS 100 100 TA=25℃ 50 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4 TYPICAL JUNCTION CAPACITANCE 240 TA=25℃ 200 CAPACITANCE (pF) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) 250 0 FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT HERF1001G-1004G 10 1 HERF1005G 0.1 HERF1006G-1008G 160 HERF1001G-1005G 120 0.01 0.4 80 0.6 0.8 1 1.2 1.4 1.6 FORWARD VOLTAGE (V) HERF1006G-1008G 40 0 1 10 100 1000 REVERSE VOLTAGE (V) Version:E11 1.8