TSC S1A_11

S1A - S1M
CREAT BY ART
Pb
1.0AMP Surface Mount Rectifiers
SMA/DO-214AC
RoHS
COMPLIANCE
Features
—
For surface mounted application
—
Glass passivated chip junction
—
Low forward voltage drop
—
High current capability
—
Easy pick and place
—
High surge current capability
—
Plastic material used carries Underwriters
Laboratory Classification 94V-0
—
High temperature soldering:
260℃/10 seconds at terminals
—
Qualified as per AEC-Q101
—
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
—
Case: Molded plastic
—
Terminal: Pure tin plated, lead free
solderable per J-STD-002B and
JESD22-B102D
Dimensions in inches and (millimeters)
Marking Diagram
S1X
—
Polarity: Indicated by cathode band
—
Packing: 12mm tape per EIA STD RS-481
—
Weight: 0.064 grams
= Specific Device Code
G
= Green Compound
Y
= Year
M
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
IF(AV)
Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum Reverse Current @ Rated VR
T A=25 ℃
T A=125 ℃
1
A
30
40
VF
A
1.1
V
1
IR
uA
50
Maximum Reverse Recovery Time (Note 2)
Trr
1.5
uS
Typical Junction Capacitance (Note 3)
Cj
12
pF
Non-Repetitive Peak Reverse Avalanche
Engergy at 25℃, IAS=1A, L=10mH
ERSM
5
mJ
Typical Thermal Resistance
RθjA
RθjL
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
75
27
85
30
O
C/W
- 55 to + 175
O
C
- 55 to + 175
O
C
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:I11
RATINGS AND CHARACTERISTIC CURVES (S1A THRU S1M)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
FIG.1 FORWARD CURRENT DERATING CURVE
100
1
0.8
0.6
0.4
RESISTIVE OR
INDUCTIVE LOAD
0.2
0
0
20
40
60
80
100
120
140
160
LEAD TEMPERATURE (oC)
10
TA=125℃
1
0.1
TA=75℃
0.01
TA=25℃
0.001
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
100
PEAK FORWARD SURGE
URRENT (A)
INSTANTANEOUS REVERSE CURRENT (uA)
AVERAGE FORWARD CURRENT
(A)
1.2
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
8.3mS Single Half Sine Wave
JEDEC Method
S1A-S1K
10
S1M
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4 TYPICAL JUNCTION CAPACITANCE
CAPACITANCE (pF)
100
10
TA=25℃
f=1.0MHz
Vsig=50mVp-p
1
0.01
0.1
1
REVERSE VOLTAGE (V)
10
FIG. 5 TYPICAL FORWARD CHARACTERISRICS
100
INSTANTANEOUS FORWARD CURRENT (A)
1
100
10
1
0.1
TA=25℃
Pulse Width=300us
1% Duty Cycle
0.01
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
Version:I11
2