RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323F B C Features A Low power loss, high current capability, low VF, low IR Surface device type mounting D Moisture sensitivity level 1 Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code E F Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : Flat lead SOD-323F small outline plastic package A 1.15 1.40 0.045 0.055 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 2.30 2.80 0.091 0.110 C 0.25 0.40 0.010 0.016 High temperature soldering guaranteed: 260°C/10s D 1.60 1.80 0.063 0.071 Polarity : Indicated by cathode band E 0.80 1.10 0.031 0.043 Weight :4.6 ± 0.5 mg F 0.05 0.15 0.002 0.006 Marking Code : S8 Pin Configuration Ordering Information Packing Marking 3K / 7" Reel S8 SOD-323F RB751V-40WS RRG 3K / 7" Reel S8 Package Part No. SOD-323F RB751V-40WS RR Suggested PAD Layout Maximum Ratings and Electrical Characteristics Dimensions Value (in mm) X 0.710 X1 2.900 Y 0.403 Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units PD 200 mW VRRM 40 V Reverse Voltage (DC) VR 30 V Average Forward Current IO 30 mA Power Dissipation Repetitive Peak Reverse Voltage Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) Junction Temperature Storage Temperature Range IFSM 0.2 A RθJA 500 °C/W TJ 125 °C TSTG -40~125 °C Notes: 1. Test Condition : 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) 2. ESD sensitive product hankling required. 3. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Version : B10 RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Electrical Characteristics Type Number Forward Voltage Reverse Leakage Current IF=1.0mA VR= 30V VR=1V, f=1.0MHz Junction Capacitance Symbol Typical Max Units VF IR CJ 2 0.37 0.5 - V uA pF Symbol K D A Dimension(mm) 2.40 Max. 1.50 +0.10 178 ± 1 Tape & Reel specification TSC label Item Carrier depth Sprocket hole Reel outside diameter Top Cover Tape Carieer Tape Any Additional Label (If Required) Reel inner diameter D1 50 Min. Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width D2 E F P0 P1 T W W1 13.0 ± 0.5 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.10 0.6 Max. 8.30 Max. 14.4 Max. W1 A D2 D1 User Direction of Feed Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity. Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. Version : B10 RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and Characteristic Curves FIG 1 Typical Forward Characteristics FIG 2 Admissible Power Dissipation Curve 300 250 Power Dissipation (mW) IF Forward Current (mA) 100 o 10 Ta=25 C 200 1 150 100 0.1 50 0.01 0 0.2 0.4 0.6 0.8 0 1 0 20 VF Forward Voltage (V) 60 80 100 120 140 o Ambient Tempeatature ( C) FIG. 4 Typical Reverse Characteristics FIG 3 Typical Junction Capacitance 5 10000 IR Leakage Current (nA) Junction Capacitance(pF) 40 4 Ta=125o 1000 3 2 100 1 0 Ta=25o 10 0 2 4 6 8 Reverse Voltage (V) 10 12 14 0 5 10 15 20 25 30 35 Reverse Voltage (V) Version : B10