1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode SOD-123F B Features C A Fast switching device(T rr<4.0nS) Surface device type mounting D Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate E Pb free version and RoHS compliant F Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Dimensions Mechanical Data Unit (mm) Unit (inch) Min Max Min Max Case : Flat lead SOD-123 small outline plastic package A 1.5 1.7 0.059 0.067 Terminal: Matte tin plated, lead free., solderable B 3.3 3.7 0.130 0.146 C 0.5 0.7 0.020 0.028 High temperature soldering guaranteed: 260 °C/10s D 2.5 2.7 0.098 0.106 Polarity : Indicated by cathode band E 0.8 1.0 0.031 0.039 Weight : 8.85±0.5 mg F 0.05 0.2 0.002 0.008 per MIL-STD-202, Method 208 guaranteed Marking Code : D1, D2, D3 Pin Configuration Ordering Information Package Part No. Packing Marking SOD-123F 1N4148W RH 3K / 7" Reel D1 SOD-123F 1N4448W RH 3K / 7" Reel D2 SOD-123F 1N9148B RH 3K / 7" Reel D3 SOD-123F 1N4148W RHG 3K / 7" Reel D1 0.91 SOD-123F 1N4448W RHG 3K / 7" Reel D2 0.036 SOD-123F 1N9148B RHG 3K / 7" Reel D3 Suggested PAD Layout 1.22 2.36 0.048 0.093 4.19 0.165 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units PD 400 mW Non-Repetitive Peak Reverse Voltage VRSM 100 V Repetitive Peak Reverse Voltage VRRM 75 V Repetitive Peak Forward Current IFRM 300 mA Power Dissipation Mean Forward Current Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range IO 150 mA RθJA 450 °C/W TJ, TSTG -65 to + 150 °C Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Version : D10 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode Electrical Characteristics Symbol Type Number IR= 100uA Reverse Breakdown Voltage IR= 5uA V(BR) Min Max 100 - 75 - Units V Forward Voltage 1N4448W, 1N914BW IF= 5.0mA 1N4148W IF= 10.0mA 1N4448W, 1N914BW IF= 100.0mA VR= 20V Reverse Leakage Current VR= 75V VR=0, f=1.0MHz Junction Capacitance Reverse Recovery Time (Note 2) VF IR 0.62 0.72 - 1.0 - 1.0 - 25 nA V - 5.0 μA CJ - 4.0 pF Trr - 4.0 ns Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=60mA, RL=100Ω, IRR=1mA Tape & Reel specification TSC label Item Top Cover Tape Carieer Tape Any Additional Label (If Required) P1 d P0 T E A C F W B Symbol Dimension Carrier width A 1.85 ± 0.10 Carrier length B 3.94 ± 0.10 Carrier depth C 1.50 ±0.10 Sprocket hole d 1.5 ± 0.1 Reel outside diameter D 178 ± 1 Reel inner diameter D1 55 Min Feed hole width D2 13.0 ± 0.20 Sprocke hole position E 1.75 ±0.10 Punch hole position F 3.50 ±0.05 Sprocke hole pitch P0 4.00 ±0.10 Embossment center P1 2.00 ±0.05 Overall tape thickness T 0.23 ± 0.05 Tape width W 8.00 ±0.20 Reel width W1 14.4 Max W1 D D2 D1 Version : D10 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics FIG 2 Reverse Current vs Reverse Voltage Instantaneous Forward Current (A) 100 100 Reverse Current (uA) 10 1 Ta=25°C 0.1 Ta=25°C 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 Instantaneous Forward Volatge (V) 1.4 1.6 0.01 0 40 60 80 Reverse Volatge (V) 100 120 FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Dissipation Curve 6 Junction Capacitance (pF) 500 Power Dissipation (mW) 20 400 300 200 100 0 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 Reverse Voltage (V) Ambient Temperature (°C) FIG 5 Forward Resistance vs. Forward Current Dynamic Forward Resistance (Ώ) 10000 1000 100 10 1 0 0 1 Forward Current (mA) 10 100 Version : D10