TSC S3J

S3A - S3M
3.0 AMPS. Surface Mount Rectifiers
SMC/DO-214AB
.126(3.20)
.114(2.90)
.245(6.22)
.220(5.59)
Features
For surface mounted application
Glass passivated junction chip.
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0
High temperature soldering:
260oC / 10 seconds at terminals
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.103(2.62)
.079(2.00)
.061(1.56)
.050(1.26)
.008(.20)
.004(.10)
.063(1.6)
.039(1.0)
.320(8.13)
.305(7.75)
Mechanical Data
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol S3A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@TL =105 oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 3.0A
V RRM
V RMS
V DC
50
35
50
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
S3D
S3G
S3J
S3K
S3M
Units
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
I(AV)
3.0
A
IFSM
100
A
VF
1.15
V
10.0
250
2.5
60
13
47
-55 to +150
-55 to +150
uA
uA
uS
pF
o
Maximum DC Reverse Current @ T A =25 C
o
at Rated DC Blocking Voltage @ T A=125 C
S3B
IR
Trr
Cj
R θJL
R θJA
TJ
Storage Temperature Range
TSTG
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Notes:
2. Measured at 1 MHz and Applied V R=4.0 Volts
3. Measured on P.C. Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas.
- 466 -
o
C/W
o
o
C
C
Version: B07
RATINGS AND CHARACTERISTIC CURVES (S3A THRU S3M)
FIG.2- TYPICAL REVERSE CHARACTERISTICS
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
100
3.0
2.0
1.5
1.0
RESISTIVE OR
INDUCTIVE LOAD
P. C. BOARD MOUNTED ON 10mm2
PAD AREAS
0.5
0
50
PEAK FORWARD SURGE CURRENT. (A)
200
60
70
80
90
100 110
120 130
o
LEAD TEMPERATURE. ( C)
140
150
165
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
10
1
Tj=25 0C
0.1
0
100
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
50
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
8.3ms Single Half Sine Wave
JEDEC Method
Tj=Tj max
10
1
100
JUNCTION CAPACITANCE.(pF)
Tj=125 0C
INSTANTANEOUS REVERSE CURRENT. ( A)
2.5
5
10
NUMBER OF CYCLES AT 60Hz
50
30
100
INSTANTANEOUS FORWARD CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
3.5
FIG.4- TYPICAL JUNCTION CAPACITANCE
50
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
10
10
3.0
1.0
0.3
0.1
Tj=25 0C
PULSE WIDTH-300 S
2% DUTY CYCLE
0.03
5
1
5
10
0.01
0.6
100
50
0.7
REVERSE VOLTAGE. (V)
0.8
0.9
1.0
1.2
1.4
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
0
-0.25A
(+)
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: B07
1.6