TSC5304ED High Voltage NPN Transistor with Diode TO-251 (IPAK) TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation ● No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer Spirit Product. ● Low Base Drive Requirement ● Suitable for Half Bridge Light Ballast Application Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor ● Integrated Anti-parallel Collector-Emitter Diode Ordering Information Part No. Package Packing TSC5304EDCP RO TSC5304EDCH C5 TO-252 TO-251 2.5Kpcs / 13” Reel 75pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage @ VBE=0V VCES 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Peak Current (tp <5ms) ICM 8 A Base Current IB 2 A Base Peak Current (tp <5ms) IBM 4 A PDTOT 35 W TJ +150 o -55 to +150 o Power Total Dissipation @ Tc=25ºC Maximum Operating Junction Temperature Storage Temperature Range TSTG 1/6 C C Version: C10 TSC5304ED High Voltage NPN Transistor with Diode Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case Limit RӨJC Thermal Resistance - Junction to Ambient RӨJA Unit 3.57 o 68 o C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 9 -- -- V Collector Cutoff Current VCB =700V, IE =0 ICBO -- -- 100 uA Collector Cutoff Current VCE =400V, IB =0 ICEO -- -- 250 uA Emitter Cutoff Current VEB =7V, IC =0 IEBO -- -- 10 uA IC =0.5A, IB =0.1A VCE(SAT)1 -- 0.25 0.7 IC =1A, IB =0.2A VCE(SAT)2 -- 0.5 1 IC =2.5A, IB =0.5A VCE(SAT)3 -- 1.2 1.5 IC =4A, IB =1A VCE(SAT)4 -- 0.5 -- IC =1A, IB =0.2A VBE(SAT)1 -- -- 1.1 IC =2A, IB =0.5A VBE(SAT)2 -- -- 1.2 10 -- -- 17 -- 37 12 -- 32 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE =5V, IC =10mA DC Current Gain VCE =5V, IC =1A Hfe VCE =5V, IC =2A V V Forward Voltage Drop IF =2A Vf -- -- 2 V Turn On Time VCC =250V, IC =1A, tON -- 0.2 0.6 uS Storage Time IB1=IB2=0.2A, tp=25uS tSTG -- 3.0 4.5 uS tf -- 0.2 0.3 uS Duty Cycle<1% Fall Time Notes: Pulsed duration =380uS, duty cycle ≤2% 2/6 Version: C10 TSC5304ED High Voltage NPN Transistor with Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/6 Version: C10 TSC5304ED High Voltage NPN Transistor with Diode TO-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.290 BSC 0.090 BSC 4.600 BSC 0.180 BSC 7.000 7.200 0.275 0.283 6.000 6.200 0.236 0.244 6.400 6.604 0.252 0.260 2.210 2.387 0.087 0.094 0.010 0.127 0.000 0.005 5.232 5.436 0.206 0.214 0.666 0.889 0.026 0.035 0.633 0.889 0.025 0.035 0.508 REF 0.020 REF 0.900 1.500 0.035 0.059 2.743 REF 0.108 REF 0.660 0.940 0.026 0.037 1.397 1.651 0.055 0.065 1.100 REF 0.043 REF Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 4/6 Version: C10 TSC5304ED High Voltage NPN Transistor with Diode TO-251 Mechanical Drawing DIM A A1 b b1 b2 C C1 D E e L L1 L2 L3 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.190 2.380 0.0862 0.0937 0.890 1.140 0.0350 0.0449 0.640 0.890 0.0252 0.0350 0.760 1.140 0.0299 0.0449 5.210 5.460 0.2051 0.2150 0.580 0.0181 0.0228 0.460 0.460 0.580 0.0181 0.0228 5.970 6.100 0.2350 0.2402 6.350 6.730 0.2500 0.2650 2.280 BSC 0.0898 BSC 8.890 9.650 0.3500 0.3799 1.910 2.280 0.0752 0.0898 0.890 1.270 0.0350 0.0500 1.150 1.520 0.0453 0.0598 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: C10 TSC5304ED High Voltage NPN Transistor with Diode Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: C10