TSC136 High Voltage NPN Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) 3A 2V @ IC / IB = 2A / 0.5A Block Diagram Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. TSC136CZ C0 Package Packing TO-220 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit VCBO VCEO VEBO 700 400 9 V V V Total Dissipation @ Tc ≤ 25 C Ptot 60 W Collector Peak Current (tp <5ms) ICM 6 A Collector Current IC 3 A Base Peak Current (tp <5ms) IBM 3 A Base Current IB 1.5 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage o Maximum Operating Junction Temperature +150 C TSTG -65 to +150 o C Symbol Limit TJ Storage Temperature Range A o Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC 1/5 2.08 Unit o C/W Version: C07 TSC136 High Voltage NPN Transistor Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage a Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 IC = 10mA, IE = 0 BVCBO BVCEO 700 400 --- --- V V Emitter-Base Breakdown Voltage Collector Cutoff Current IE = 1mA, IC = 0 VCB = 700V, IE = 0 BVEBO ICBO 9 -- --- -100 V uA Emitter Cutoff Current VEB = 9V, IC = 0 IC =0.5A, IB =0.1A IEBO VCE(SAT)1 --- --- 10 0.5 uA IC =0.6A, IB =60mA IC =2A, IB =0.5A VCE(SAT)2 VCE(SAT)3 --- -1.5 0.7 2 V VCE = 5V, IC = 10mA hFE 1 10 27 -- VCE = 5V, IC = 1A hFE 2 10 -- 30 VCE = 5V, IC = 2A hFE 3 4 -- 24 fT 4 -- -- MHz Cob -- 21 -- pF Collector-Emitter Saturation Voltage DC Current Gain a Frequency VCE = 10V, IC = 0.1A Output Capacitance VCB = 10V, f = 0.1MHz Turn On Time VCC = 125V, IC = 1A, tON -- 0.4 -- uS Storage Time IB1 = 0.2A, IB2 = 0.2A, tSTG -- 2.0 -- uS Fall Time RL = 125ohm tf -- 0.16 -- uS Notes: a. Pulsed duration = 300uS, duty cycle ≤1.5% 2/5 Version: C07 TSC136 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/5 Version: C07 TSC136 High Voltage NPN Transistor TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.75 0.85 0.029 0.033 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 1.285 1.315 0.050 0.051 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 4/5 Version: C07 TSC136 High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: C07