UTC-IC 10N30

UNISONIC TECHNOLOGIES CO., LTD
10N30
Preliminary
Power MOSFET
10A, 300V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 10N30 is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 10N30 is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
„
1
TO-220
FEATURES
* High switching speed
* RDS(ON)=0.65Ω @ VGS=10V
* 100% avalanche tested
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N30L-TA3-T
10N30G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-220
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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10N30
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
300
V
Gate-Source Voltage
VGSS
±30
V
ID
10
A
Continuous (TC=25°C)
Drain Current
Pulsed (Note 2)
IDM
40
A
Avalanche Current (Note 2)
IAR
11
A
360
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 4)
EAR
13.5
mJ
Power Dissipation
135
W
PD
Derate above 25°C
1.07
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5.7mH, IAS = 10.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62.5
0.93
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
MIN TYP MAX UNIT
ID=250µA, VGS=0V
VDS=300V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
300
VDS=VGS, ID=250µA
VGS=10V, ID=10A
2.0
VGS=0V, VDS=25V, f=1.0MHz
V
1
µA
+100 nA
-100 nA
0.5
4.0
0.65
V
Ω
840 1090 pF
250 325 pF
80 110 pF
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=120V, ID=10A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, VGS=10V, ID=1A,
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=10A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
28
4
15
14
89
81
81
35
40
190
170
170
nC
nC
nC
ns
ns
ns
ns
10
40
1.4
A
A
V
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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