UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps. FEATURES * RDS(on) < 0.18Ω @ VGS=10V, ID=6A * High switching speed * Low gate charge SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free TO-220 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T TO-251 12N10L-TN3-R 12N10G-TN3-R TO-252 12N10G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 G G G S 2 D D D S Pin Assignment 3 4 5 6 7 S S S S G D D D 8 D Packing Tube Tube Tape Reel Tape Reel 1 of 6 QW-R502-737.E 12N10 Power MOSFET MARKING TO-220 / TO-251 / TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SOP-8 2 of 6 QW-R502-737.E 12N10 Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage RATINGS UNIT 100 V ±20 V TC=25°C 12 A Continuous ID Drain Current TC=100°C 8.5 A Pulsed (Note 2) IDM 48 A TO-220 73 Power Dissipation TO-251/TO-252 PD 30 W SOP-8 5 Avalanche Energy (Note 3) EAS 100 mJ Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area 3. Starting TJ = 25°C, ID = 12A, VDD = 50V SYMBOL VDSS VGSS THERMAL DATA PARAMETER SYMBOL TO-220 Junction to Ambient TO-251/TO-252 θJA SOP-8 TO-220 Junction to Case TO-251/TO-252 θJC SOP-8 Note: Device mounted on 1in2 FR-4 board with 2oz. Copper, t = 10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 100 75 (Note) 1.71 4.1 25 (Note) UNIT °C/W °C/W 3 of 6 QW-R502-737.E 12N10 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=Max rating, VGS=0V Forward VGS=+20V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 1,2) Total Gate Charge QG Gate to Source Charge QGS VGS=10V, VDD=80V, ID=12A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=1A, RG=9.1Ω, VGS=10V (Fig. 1) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=12A, VGS=0V (Note 1) Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 1 V 1 µA +100 nA -100 nA 3 0.15 0.18 V Ω 430 90 20 pF pF pF 7.5 2.5 3.0 12 7 18 3 10 24 14 35 6 nC nC nC ns ns ns ns 12 48 A A 1.2 V 4 of 6 QW-R502-737.E 12N10 Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-737.E 12N10 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage 14 Drain Current, ID (A) 12 10 8 6 4 2 0 0 0.3 0.6 0.9 1.2 1.5 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-737.E