UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION 1 The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) SOT-89 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB798L-X-AB3-R 2SB798G-X-AB3-R 2SB798L-X-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AB3: SOT-89 (3)Rank (3) x: refer to Classification of hFE1 (4)Lead Free (4) Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Packing Tape Reel 1 of 4 QW-R208-020.B 2SB798 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5.0 V DC -1.0 A Collector Current IC Pulse(Note 1) -1.5 A Collector Dissipation (Note 2) PC 2 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 1. PW≦10ms,Duty Cycle≦50% 2 2. When mounted on a ceramic substrate of 16cm ×0.7 mm. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain hFE1 DC Current Gain hFE2 Base to Emitter Voltage VBE Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage VBE(sat) Gain Bandwidth Product fT Output Capacitance Cob Note: 3. PW≦350μs, Duty Cycle≦2% TEST CONDITIONS VCB= -30V , IE= 0 VEB= -5.0V, IC= 0 VCE= -1.0V, IC= -100mA VCE= -1.0V, IC= -1.0A VCE= -6.0V, IC= -10mA MIN TYP 90 50 -600 200 100 -640 MAX -100 -100 400 UNIT nA nA -700 mV IC= -1.0A, IB= -0.10A -0.25 -0.40 V IC= -1.0A, IB= -0.10A VCE= -6.0V, IE= 10mA VCB= -6.0V, IE= 0, f=1MHz -1.0 110 36 -1.2 V MHz pF CLASSIFICATION OF hFE1 MARKING hFE1 DM 90-180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DL 135-270 DK 200-400 2 of 4 QW-R208-020.B 2SB798 TYPICAL CHARACTERISTICS Collector Dissipation vs. Ambient Temperature 2.5 When mounted on a ceramic substrate of 16cm2 *0.7mm 2.0 -1000 -500 VCE=-0.6V PULSDE -50 1.0 -20 -10 0.5 -5 0 0 Collector Current vs. Base to Emitter Voltage -200 -100 1.5 50 100 150 200 -2 -1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 Base to Emitter Voltage, VBE (V) 250 ) DC Current Gain vs.Collector Current VCE=1.0V PULSED 1000 500 Ta=75 Ta=25 200 100 Ta=-25 50 20 10 Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Base Saturation Voltage, VBE(sat) (V) Collector Saturation Voltage, VCE(sat) (V) Collector Current, IC (mA) Collector Current, IC (mA) Ambient Temperature, Ta ( DC Current Gain, hFE PNP EPITAXIAL SILICON TRANSISTOR Collector and Base Saturation Voltage vs. Collector Current -10 IC=10*IB -5 -2 -1 VBE(sat) -0.5 -0.2 -0.1 -0.05 VCE(sat) -0.02 -0.01 -1 -2 -5 -10 -20-50-100-200-500-1-2 -5 Collector Current, IC (A) 3 of 4 QW-R208-020.B 2SB798 PNP EPITAXIAL SILICON TRANSISTOR Gain Bandwidth Product, fT (MHz) 1000 500 VCE=-6.0V 200 100 VCE=-1.0V 50 20 10 1 2 5 10 20 50100 2005001000 Emitter Current, IE (mA) 100 Output Capacitance, Cob (pF) Gain Bandwidth Product vs. Emitter Current 50 Output Capacitance vs. Collector to Base Voltage IE=0 f=1.0MHz 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50-100 Collector to Base Voltage, VCB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R208-020.B