UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T Ordering Number Lead Free 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T Halogen Free 2SB834G-x-T60-K 2SB834G-x-TA3-T 2SB834G-x-TF3-T www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package TO-126 TO-220 TO-220F Pin Assignment 1 2 3 E C B B C E B C E Packing Bulk Tube Tube 1 of 4 QW-R204-018.D 2SB834 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation (TC=25°C) SYMBOL VCBO VCEO VEBO IC IB TO-126/TO-220F TO-220 RATINGS -60 -60 -7 -3 -0.5 25 30 PC UNIT V V V A A W W Junction Temperature TJ +125 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain Current Gain Bandwidth Product SYMBOL BVCEO ICBO IEBO VCE(SAT) VBE(ON) hFE1 hFE2 fT TEST CONDITIONS IC=-50mA VCB=-60V VEB=-7V IC=-3A, IB=0.3A VCE=-5V, IC=-0.5A IC=-0.5A, VCE=-5V IC=-3A, VCE=-5V VCE=-5V, IC=-0.5A MIN -60 TYP -0.7 60 20 MAX -100 -100 -1 -1 300 9 UNIT V μA μA V V MHZ CLASSIFICATION of hFE1 RANK RANGE O 60-120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 100-200 GR 150-300 2 of 4 QW-R204-018.D 2SB834 TYPICAL CHARACTERISTICS Collector Current vs. Collector-Emitter Voltage -70 -80 -60 -50 Power Derating 40 -3.0 Collector Current, IC (A) Power Dissipation, PD (W) 35 30 25 TO-220 20 15 TO-126/TO-220F 10 -40 -30 -2.0 -20 IB = -10mA -1.0 5 TC=25°C 0 0 25 75 50 100 125 0 150 -1.0 Temperature, TC (°C) 300 TC=100°C Collector Current, IC (A) DC Current Cain, hFE TC=-25°C 100 50 30 -5 -10 -20 -50 -100 -200 -500 -1k -2.0 -6.0 -0.4 -0.1 TC=100°C 25°C -25°C -5 -10 -20 -50-100-200 -500 -1k -2k -3k Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD -1.2 -0.8 -1.6 Base-Emitter Voltage, VBE (V) -10 Active-Region Safe Operating AREA (SOA) 100ms 10ms -5.0 Collector Current, IC (A) -0.2 www.unisonic.com.tw -5.0 -1.0 0 -3k Collector-Emitter Saturation Voltage vs. Collector Current -1.0 Common Emitter -0.4 IC/IB = 10 -0.02 -2 -4.0 TC=100°C 25°C -25°C Collector Current, IC (mA) -0.05 -3.0 Collector Current vs. Base-Emitter Voltage -3.0 VCE = 5.0V VCE = 5.0V TC=25°C 10 -2 -2.0 Collector-Emitter Voltage, VCE (V) DC Current Gain Collector-Emitter Saturation Voltage, VCE(SAT) (V) PNP SILICON TRANSISTOR 1ms DC -2.0 -1.0 -0.5 Bonding Wire Limit Second Breakdown Limit Thermally Limited at TC=25°C(Single Pulse) -0.2 -0.1 -1.0 -2.0 -5.0-7.0-10 -20 -50-70-100 Collector Emitter Voltage, VCE (V) 3 of 4 QW-R204-018.D 2SB834 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-018.D