UTC-IC 2SB834L-X-TA3-T

UNISONIC TECHNOLOGIES CO., LTD
2SB834
PNP SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
„
DESCRIPTION
Low frequency power amplifier applications.
Lead-Free:
2SB834L
Halogen Free: 2SB834G
„
ORDERING INFORMATION
Normal
2SB834-x-T60-K
2SB834-x-TA3-T
2SB834-x-TF3-T
Ordering Number
Lead Free
2SB834L-x-T60-K
2SB834L-x-TA3-T
2SB834L-x-TF3-T
Halogen Free
2SB834G-x-T60-K
2SB834G-x-TA3-T
2SB834G-x-TF3-T
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
Package
TO-126
TO-220
TO-220F
Pin Assignment
1
2
3
E
C
B
B
C
E
B
C
E
Packing
Bulk
Tube
Tube
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2SB834
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation (TC=25°C)
SYMBOL
VCBO
VCEO
VEBO
IC
IB
TO-126/TO-220F
TO-220
RATINGS
-60
-60
-7
-3
-0.5
25
30
PC
UNIT
V
V
V
A
A
W
W
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
Current Gain Bandwidth Product
„
SYMBOL
BVCEO
ICBO
IEBO
VCE(SAT)
VBE(ON)
hFE1
hFE2
fT
TEST CONDITIONS
IC=-50mA
VCB=-60V
VEB=-7V
IC=-3A, IB=0.3A
VCE=-5V, IC=-0.5A
IC=-0.5A, VCE=-5V
IC=-3A, VCE=-5V
VCE=-5V, IC=-0.5A
MIN
-60
TYP
-0.7
60
20
MAX
-100
-100
-1
-1
300
9
UNIT
V
μA
μA
V
V
MHZ
CLASSIFICATION of hFE1
RANK
RANGE
O
60-120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Y
100-200
GR
150-300
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2SB834
TYPICAL CHARACTERISTICS
Collector Current vs.
Collector-Emitter Voltage
-70 -80
-60
-50
Power Derating
40
-3.0
Collector Current, IC (A)
Power Dissipation, PD (W)
35
30
25
TO-220
20
15
TO-126/TO-220F
10
-40
-30
-2.0
-20
IB = -10mA
-1.0
5
TC=25°C
0
0
25
75
50
100
125
0
150
-1.0
Temperature, TC (°C)
300
TC=100°C
Collector Current, IC (A)
DC Current Cain, hFE
TC=-25°C
100
50
30
-5 -10 -20
-50 -100 -200 -500 -1k
-2.0
-6.0
-0.4
-0.1
TC=100°C
25°C
-25°C
-5 -10 -20 -50-100-200 -500 -1k -2k -3k
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
-1.2
-0.8
-1.6
Base-Emitter Voltage, VBE (V)
-10
Active-Region Safe Operating AREA
(SOA)
100ms 10ms
-5.0
Collector Current, IC (A)
-0.2
www.unisonic.com.tw
-5.0
-1.0
0
-3k
Collector-Emitter Saturation Voltage
vs. Collector Current
-1.0
Common Emitter
-0.4 IC/IB = 10
-0.02
-2
-4.0
TC=100°C
25°C
-25°C
Collector Current, IC (mA)
-0.05
-3.0
Collector Current vs.
Base-Emitter Voltage
-3.0
VCE = 5.0V
VCE = 5.0V
TC=25°C
10
-2
-2.0
Collector-Emitter Voltage, VCE (V)
DC Current Gain
Collector-Emitter Saturation Voltage,
VCE(SAT) (V)
„
PNP SILICON TRANSISTOR
1ms
DC
-2.0
-1.0
-0.5
Bonding Wire Limit
Second Breakdown Limit
Thermally Limited
at TC=25°C(Single Pulse)
-0.2
-0.1
-1.0
-2.0
-5.0-7.0-10
-20
-50-70-100
Collector Emitter Voltage, VCE (V)
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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